U632H16S Search Results

U632H16

Abstract: Stk 2048 11
Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM Not Recommended For New Designs Features ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ High-performance CMOS nonvolatile static RAM 2048 x 8 bits 25 ns Access Times 12 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle

U632H16

Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM Features ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ High-performance CMOS nonvolatile static RAM 2048 x 8 bits 25 ns Access Times 12 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM

Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM Features S High-performance CMOS nonS S S S S S S S S S S S S S S S volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM

Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM Features S High-performance CMOS nonS S S S S S S S S S S S S S S S volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM

PDIP28

Abstract: U632H16 ZMD AG
Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM Features ! High-performance CMOS non! ! ! ! ! ! ! ! ! ! ! ! ! ! ! volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM

Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM Features F High-performance CMOS nonF F F F F F F F F F F F F F F volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM

PDIP28

Abstract: U632H16
Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM F Packages: Features F F F F F F F F F F F F F F F F High-performance CMOS nonvolatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM

Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM Features F High-performance CMOS nonF F F F F F F F F F F F F F F volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM

Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM Features ! High-performance CMOS non! ! ! ! ! ! ! ! ! ! ! ! ! ! ! volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM

Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM Features F High-performance CMOS nonF F F F F F F F F F F F F F F volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM

Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM Features F High-performance CMOS nonF F F F F F F F F F F F F F F volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM

ENE 555

Abstract: ZMD cross reference PDIP28 U632H16
Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM F Packages: Features F F F F F F F F F F F F F F F F PDIP28 300 mil PDIP28 (600 mi) SOP28 (300 mil) auto matically on power up. The U632H16 combines the high performance and ease of use of a fast High-performance CMOS no nSRAM with n onvolatile data intevolatile stati c RAM 2048 x 8 bits

STK12C68

Abstract: U632H16
Contextual Info: Simtek Corporation Product Discontinuance Home page: http://www.simtek.com E-mail: information@simtek.com 4250 Buckingham Drive, Suite 100 Colorado Springs CO 80907 USA 719-531-9444 fax 719-531-9481 PCN # 10050 01 PCN Status PCN Date October 04, 2006 PCN Type

Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM Features F High-performance CMOS nonF F F F F F F F F F F F F F F volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM