U28 201 Search Results

88E1111

Abstract: Marvell PHY 88E1111 Datasheet HFJ11-1G02E VSC8240 Marvell PHY 88E1111 altera Marvell PHY 88E1111 layout PC28F00AM29EWL Marvell PHY 88E1111 MDIO read write sfp 88e1111 sfp i2c Marvell PHY 88E1111 MDIO read write
Contextual Info: 100G Development Kit, Stratix IV GT Edition Reference Manual 100G Development Kit, Stratix IV GT Edition Reference Manual 101 Innovation Drive San Jose, CA 95134 www.altera.com MNL-01057-1.0 Subscribe 2010 Altera Corporation. All rights reserved. ALTERA, ARRIA, CYCLONE, HARDCOPY, MAX, MEGACORE, NIOS, QUARTUS and STRATIX are Reg. U.S. Pat.

Contextual Info: Anti-Sulfurated Chip Resistor Array Anti-Sulfurated Chip Resistor Array EXBU2 : 0402 Array EXBU3 : 0603 Array Type: • Features ● High resistance to sulfurization achieved by adopting an Ag-Pb-based inner electrode ● High density 2 resistors in 1.0 mm x 1.0 mm size EXBU24

Contextual Info: Anti-Sulfurated Chip Resistor Array Anti-Sulfurated Chip Resistor Array EXBU2 : 0402 Array EXBU3 : 0603 Array Type: • Features ● High resistance to sulfurization achieved by adopting an Ag-Pb-based inner electrode ● High density 2 resistors in 1.0 mm ҂ 1.0 mm size EXBU24

EXBU28

Abstract: EXBU38 RESISTOR ARRAY 0402 land pattern U-28
Contextual Info: Anti-Sulfurated Chip Resistor Array Anti-Sulfurated Chip Resistor Array EXBU2 : 0402 Array EXBU3 : 0603 Array Type: • Features ● High resistance to sulfurization achieved by adopting an Ag-Pb-based inner electrode ● High density 2 resistors in 1.0 mm x 1.0 mm size EXBU24

Contextual Info: Anti-Sulfurated Chip Resistor Array Anti-Sulfurated Chip Resistor Array EXBU2 : 0402 Array EXBU3 : 0603 Array Type: • Features ● High resistance to sulfurization achieved by adopting an Ag-Pb-based inner electrode ● High density 2 resistors in 1.0 mm x 1.0 mm size EXBU24

FPQ-256

Abstract: TSC695 F User Manual transistor bra 94 TSC695 E310D bra15 FPQ-256-0 Flash SIMM 72 29F040 SPARC V7.0 ERC32
Contextual Info: eVAB-695 Rad-Hard Evaluation Board TSC695 Embedded Processor Hardware User’s Manual Rev.E - 22 March, 2001 1 eVAB-695 Hardware User’s Manual Information Foreword Atmel Nantes S.A. reserves the right to make changes in the products or specifications contained in this document

VA22 smd

Abstract: SMD .VA22 smd code va25 SMD PD18 0,68uf 50v smd SMD LD3 TG22-3506 74ACT244DW VA22 1nF 50V 1206,SMD
Contextual Info: 3/1999 Rev 1.0 MPC8260 PowerQUICC II MPC8260-TCOM User’s Manual MOTOROLA MPC8260TCOM User’s Manual 0•1 PRELIMINARY INTRODUCTION This page provides unpacking instructions, hardware preparation, and installation instructions for the MPC8260TCOM. 0•2

VA22 smd

Abstract: SMD .VA22 ATM8 VA22 VA30 RN16 freescale HALO TG22-3506ND smd code va25 CRA06S0803 100 OHM DALE SOMC
Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. 3/1999 Rev 1.0 MPC8260 PowerQUICC II MPC8260-TCOM User’s Manual MOTOROLA For More Information On This Product, Go to: www.freescale.com MPC8260TCOM User’s Manual 0•1 Freescale Semiconductor, Inc.

Contextual Info: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • • • • • Figure 1: 240-pin, fully buffered DIMM (FBDIMM)

Contextual Info: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • • • • • Figure 1: 240-pin, fully buffered DIMM (FBDIMM)

ps3109

Abstract: u28 201 MARKING CODE U37 marking U38 DDR2-667 MO-256 PC2-5300 DDR2 pin out marking micron ddr2 sn131
Contextual Info: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.55V DDR2 SDRAM FBDIMM MT36RTF51272FY – 4GB Features • • • • • • • • Information in the 1.8V DDR2 FBDIMM data sheet is directly applicable to this 1.55V DDR2 FBDIMM, except where stated otherwise in this data sheet.

pn133

Abstract: SN123 MT36GTF51272F
Contextual Info: Preliminary‡ 4GB x72, DR, FB, 1.50V 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272F – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • Figure 1: Lower power consumption 1.40V ≤ VDD = VDDQ ≤ 1.70V for DDR2 SDRAM

Contextual Info: Preliminary‡ 4GB x72, DR, FB, 1.55V 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36RTF51272F – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • Figure 1: Lower power consumption 1.50V ≤ VDD = VDDQ ≤ 1.90V for DDR2 SDRAM

Contextual Info: 4GB x72, ECC, DR 240-Pin DDR3 SDRAM RDIMM Features DDR3 SDRAM RDIMM MT36JS(Z)F51272PZ Features Figure 1: 240-Pin RDIMM (MO-269 R/C J) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

micron SDRAM SPD table

Abstract: U26 MARKING
Contextual Info: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB Features • • • • • • • • Except where stated in this data sheet, information in the corresponding 1.8V DDR2 FBDIMM data sheet is directly applicable to the 1.5V DDR2 FBDIMM. For

marking U34 Z 201

Abstract: marking U34 marking code U6 DO 214 SS91
Contextual Info: 4GB x72, DR 240-Pin DDR2 SDRAM 1.55V FBDIMM Features 1.55V DDR2 FBDIMM MT36RTF51272FZ – 4GB Features • • • • • • • • Figure 1: 240-Pin FBDIMM (MO-256 R/C E) 240-pin, fully buffered DIMM (FBDIMM) Very low power DDR2 operation 1.5V ≤ VDD ≤ 1.9V for DDR2 SDRAM

MT47J256M4

Abstract: micron SDRAM SPD table MT47J256M
Contextual Info: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB Features • • • • • • • • Except where stated in this data sheet, information in the corresponding 1.8V DDR2 FBDIMM data sheet is directly applicable to the 1.5V DDR2 FBDIMM. For

MT36KSF2G72PZ-1G

Abstract: MT36KSF2G72PZ-1G6 MT36KSF2G72PZ MT41K1G4
Contextual Info: 16GB x72, ECC, DR 240-Pin DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT36KSF2G72PZ – 16GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C J1) • DDR3L functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

3U37

Abstract: BC 1098
Contextual Info: 16GB, 32GB x72, ECC, QR 240-Pin DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT72KSZS2G72PZ - 16GB MT72KSZS4G72PZ - 32GB Features Figure 1: 240-Pin RDIMM (R/C AB, AB1) • DDR3L functionality and operations supported as defined in the component data sheet

Contextual Info: 16GB x72, ECC, DR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT36JSF2G72PZ – 16GB Features Figure 1: 240-Pin RDIMM (R/C J1) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

Contextual Info: 16GB x72, ECC, DR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT36JSF2G72PZ – 16GB Features Figure 1: 240-Pin RDIMM (R/C J1) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

U30t

Abstract: U33t MT41K2GM4
Contextual Info: 16GB, 32GB x72, ECC, QR 240-Pin DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT72KSZS2G72PZ - 16GB MT72KSZS4G72PZ - 32GB Features Figure 1: 240-Pin RDIMM (R/C AB, AB1) • DDR3L functionality and operations supported as defined in the component data sheet

JEDEC SPD No.21

Contextual Info: 16GB x72, ECC, DR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT36JSF2G72PZ – 16GB Features Figure 1: 240-Pin RDIMM (R/C J1) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

MT41K1G4

Contextual Info: 16GB x72, ECC, DR 240-Pin 1.35V DDR3L RDIMM Features 1.35V DDR3L SDRAM RDIMM MT36KSF2G72PZ – 16GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C J1) • DDR3L functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module