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U61000DC
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
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78.61KB |
1 |
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U6101B
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Temic Semiconductors
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IF System and I/Q Demodulator for Digital Satellite TV Transmissions |
Original |
PDF
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235.52KB |
7 |
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U6101B-AFSG3
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Atmel
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COMMUNICATION IF SYSTEM AND I/Q DEMODULATOR FOR DIGITAL SATELLITE 20SSO |
Original |
PDF
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240.53KB |
7 |
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U6102B
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Temic Semiconductors
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IF System and I/Q Demodulator for Digital Satellite TV Transmissions |
Original |
PDF
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223.15KB |
6 |
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U61256DC
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
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78.61KB |
1 |
GBU610
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JCET Group
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6.0A plastic-encapsulated bridge rectifier with repetitive peak reverse voltage from 50V to 1000V, suitable for general purpose single-phase applications, featuring high surge current capability and glass passivated chip technology. |
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HSU6117
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -60 A continuous drain current, 14 mΩ RDS(ON) at VGS = -10V, featuring low gate charge, high cell density trench technology, and 100% EAS guaranteed for synchronous buck converter applications. |
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HSU6115
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -35A continuous drain current, 25mΩ RDS(ON) at VGS=-10V, low gate charge, and 100% avalanche rated, suitable for synchronous buck converters. |
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PDF
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HSU6103
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -18A continuous drain current, 70mΩ RDS(ON) at VGS=-10V, designed for synchronous buck converters using high cell density trench technology. |
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HSU6107
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -8A continuous drain current, 180mΩ RDS(ON) at VGS=-10V, low gate charge, and advanced trench technology for synchronous buck converters. |
Original |
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GBU602 thru GBU610
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CREATEK Microelectronics
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Single-phase bridge rectifier in GB-U package, rated for 6 A average forward current, with peak repetitive reverse voltage from 200 to 1000 V, low forward voltage drop, and high surge current capability. |
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PDF
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HSU6113
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -13A continuous drain current, 90mΩ RDS(ON) at VGS=-10V, featuring low gate charge, high cell density trench technology, and 100% EAS tested for synchronous buck converter applications. |
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GBU610
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Jiangsu JieJie Microelectronics Co Ltd
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GBU600~GBU610 glass passivated bridge rectifiers feature 6A average rectified output current, 50 to 1000V maximum repetitive peak reverse voltage, high surge current capability, and are suitable for AC/DC full wave rectification in SMPS, lighting ballasts, and adapters. |
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KBU610
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JCET Group
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6A average rectified output current, 50V to 1000V repetitive peak reverse voltage, glass passivated chip, single-phase bridge rectifier in KBU6005 through KBU610 package.6A general purpose single-phase bridge rectifier with repetitive peak reverse voltage from 50V to 1000V, high surge current capability, glass passivated chip, and operating junction temperature up to 150°C.6A general purpose single-phase bridge rectifier with repetitive peak reverse voltage from 50V to 1000V, high surge current capability, glass passivated chip, and operating junction temperature up to 150°C. |
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GBU610
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Microdiode Semiconductor
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Glass Passivated, Reverse Voltage 50-1000V, Forward Current 6.0A. |
Original |
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HSU6105
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Huashuo Semiconductor
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P-Ch 60V Fast Switching MOSFET with -29A continuous drain current, 35mΩ RDS(ON), low gate charge, and 100% EAS tested, suitable for synchronous buck converters. |
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PDF
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GBU610
