U-101 UNITRODE Search Results

220S2

Abstract: 220 ohm resistor GA100 GA101 GA102
Contextual Info: GAI 00 GA 101 GA102 SCRs Nuclear Radiation Resistant, Planar FE A T U R E S D ESCR IP TIO N • Optimized for Radiation Resistance • Fully Characterized for “Worst Case” Design • Post Radiation Design Lim its Specified • Passivated Planar Construction for

961h

Abstract: UCC3920
Contextual Info: y UNITRODE UCC2920 UCC3920 PRELIMINARY DESCRIPTION • Integrated 0.1 Q Power MOSFET • -3 V to - 1 5V Operation • Programmable Electronic Circuit Breaker The UCC3920 Low RDSon Hot Swap Power Manager provides com plete power man­ agement, hot swap capability, and circuit breaker functions. The only component

UCC3920

Contextual Info: y UCC2920 UCC3920 UNITRODE PRELIM INARY -3 V to -15V Hot Swap Power Manager FEA TUR ES DESCRIPTIO N • Integrated 0.10 P o w e r M O S FE T T h e U C C 3 9 2 0 Low R D S on H ot S w a p P ow er M an a g e r p rovides co m p le te p ow er m an ­ • - 3 V t o - 1 5 V O peration

5603C

Contextual Info: UNITRODE CORP 9347963 TË Ü N ÎT R O D E » r | ,i347clb3 QOlOlflfl D C ORP 92D 1 09 88 RECTIFIERS D ' lîlllglé High Efficiency, 25A Center-Tap s e s 5603C FEATURES « Low F o rw a rd V o lta g e • F a s t S w itc h in g S p ee d • C o n v e n ie n t P a c k a g e

k 2101 MOSFET

Abstract: 2N6789
Contextual Info: POWER MOSFET TRANSISTORS IK 200 Volt, 0.80 Ohm N-Channel 2N679° DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching

F312

Abstract: f313 ufnf310
Contextual Info: POWER MOSFET TRANSISTORS ¡fF^ î? 400 Volt, 3.6 Ohm UFNF312 UFNF313 FEATURES • Fast Switching • Low Drive Current DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Ros<om and a high transconductance.

FN230

Contextual Info: UNITRODE CORP 9347963 D E | c1 3 4 7 t:]tJ3 UNITRODE CORP 92D D G lG fiS l 5 10851 POWER MOSFET TRANSISTORS UFNF230 UFNF231 UFNF232 UFNF233 200 Volt, 0.4 Ohm N-Channel FEA TU R ES • F asl Sw itch in g • Low Drive Current DESCRIPTIO N The U nitrode pow er M O SFET design u tilizes the m ost advan ce d technology available.

Contextual Info: IN T E G R A T E D UNITRODE Power S u p p ly Supervisory Circuit UC1543 UC2543 UC3543 UC1544 UC2544 UC3544 FEATURES DESCRIPTION • Includes over-voltage, under-voltage, and current sensing circuits These m onolithic integrated circuits contain all the functions necessary to monitor and

UFNF230

Abstract: F-431
Contextual Info: U N I T R O D E CO RP 9347963 ^2 D E | ci347clb3 OGlDflfll 92D U N I T R O D E CORP POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel 10 881 D UFNF430 UFNF431 UFNF432 UFNF433 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

Contextual Info: IN T E G R A T E D C IR C U IT S UC1524A UC2524A UC3524A UNITRODE Advanced Regulating Pulse Width Modulators D E S C R IP TIO N F E A TU R ES The UC1524A family of regulating PWM ICs has been designed to retain the same highly versatile architecture of the industry standard UC1524 SG1524

UC1524A block diagram

Contextual Info: IN T E G R A T E D C I R C U IT S UC1524A UC2524A UC3524A UNITRODE Advanced Regulating Pulse Width Modulators DESCRIPTION FEATURES Fully Interchangeable with Standard UC1524 Family Precision Reference Internally Trimmed to ±1% High-Performance Current Limit

fuse BJE 147

Abstract: fuse 9 BJE 147 SHINDENGEN TR 222 7431u ZD205 zd106 R-33 ZUP-400 mip0224 d1fl20u
Contextual Info: ZUP-400 SERIES RELIABILITY DATA DWG: JA549-79-01 Q A APPD APPD PorôK' Ptlii. CHK O c ^ /a o /q ^ ^ A DWG ^ nJ n e m ic - l a m b d a l t d . <*• s<7. /& & & INDEX 1 .MTBF; Calculated Value of MTBF R-1 2.Component Derating R -2-12 3.Main Components Temperature Rise

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

CC291

Contextual Info: [application INFO y UNITRODE 1 1 available | U C C 1913 U CC2913 U C C3913 Negative Voltage Hot Swap Power Manager FEATURES DESCRIPTION • Precision Fault Threshold The UCC1913 family of negative voltage circuit breakers provides com­ plete power management, hot swap, and fault handling capability. The IC is

UC337

Abstract: UC237
Contextual Info: y _ IN T E G R A T E D C,RCU,TS U IM IT R O D E UC137 UC237 UC337 1.5A, Three Terminal Adjustable Negative Voltage Regulators FEATURES DESCRIPTION • Output voltage adjustable from -1 .2 to -3 7 V • Guaranteed il.5A output current • Line regulation typically 0 .0 1 % / V

Contextual Info: JIICROSEMI CORP/ WATERTOWN SQE D • QDIESST bEfl ■ U N I T RECTIFIER ASSEMBLIES Z fK Single Phase Bridges, 10 Amp, Military Approved jan & jantx 4§%3 7 ^23-07 F EA T U R E S • Qualified to MIL-S-19500/469 • Current Rating: to 10A • PIV: from 200 to 600V

10A jantx diodes

Abstract: JANTX469-1 735 01 bridge rectifier Unitrode discrete
Contextual Info: RECTIFIER ASSEMBLIES JAN &JANTX 469-1 JAN & JANTX 469-2 JAN & JANTX 469-3 Single Phase Bridges, 10 Amp, Military Approved FEATURES DESCRIPTION • • • • • • • T h is serie s of m ilitary high-current single-p h a se bridge offer the utm ost in

2N6797

Contextual Info: POWER MOSFET TRANSISTORS JTX JTXV 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design ach ieves a very low Rosiom and a high transconductance. FEATURES • Fast Sw itching

2N5840

Abstract: 2N5838 2N5839 t508 2N5833
Contextual Info: POWER TRANSISTORS 2 N5838 2N5839 2 N5840 3A, 375V Silicon NPN Mesa FEATURES D ESCRIPTION • C o lle c t o r -B a s e V o lta g e : u p to 375V • P e a k C o lle c t o r C u rre n t: 5A T h e s e h ig h v o lta g e g l a s s p a s s iv a t e d pow er t r a n s is t o r s c o m b in e f a s t s w itc h in g , low

Contextual Info: M I C R O S E M I C O R P / ÜJATERTOÜJN SQE D G 0 1 E 5 2 b R24 • U N I T SCRs JAN & JANTX 2N3027-2N3032 0.5 Amp, Planar T ^ j r - n FEA TU R ES D E S C R IP T IO N • JAN and JANTX Types Available • Fully Characterized for “Worst Case” Design • Passivated Planar Construction for Maximum

ir 2248 mosfet n-channel

Abstract: ufn510 UFN512
Contextual Info: UFN510 UFN511 UFN512 UFN513 POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Channel FEATURES • Com pact Plastic Package • Fast Sw itching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature S tability DESCRIPTION

lta 301

Contextual Info: "^TELEDYNE COMPONENTS TC18C46 TC28C46 TC38C46 TC18C47 TC28C47 TC38C47 CMOS CURRENT MODE PWM CONTROLLER FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Isolated Output Drive Low Power CMOS Construction Low Supply Current. .2 mATyp

2n3028

Abstract: 2N3028 JANTX
Contextual Info: SCRs JAN & JANTX 2N3027-2N3032 0.5 Amp, Planar FEA T U RE S • JA N and JA N T X Types Available • Fully Characterized for “Worst C ase” Design • Passivated Planar Construction for Maxim um R eliability and Parameter Uniform ity • Low On-State Voltage and Fast Sw itching

VOGT 406 69

Abstract: vogt 545 23 194 00 IRF 9234 rectificadores VOGT 504 07 005 00 vogt 406 47 vogt 543 VOGT 545 29 008 00 VOGT 545 64 009 VOGT 573
Contextual Info: I N T E R N AT I O N A L R E C T I F I E R ANNUAL REPORT 2000 I N T E R N AT I O N A L R E C T I F I E R . THE POWER TO MAKE THINGS HAPPEN. INTERNATIONAL RECTIFIER ANNUAL REPORT 2000 COMPANY PROFILE International Rectifier is a world leader in power management, a technology