U 35 DIODE Search Results

IN647

Abstract: IN645 CA500 diode oa202 TID125 TID126 TID139N 100v 500ma diode IS113 OA202
Contextual Info: T In e x a s D io de A rra y s P lastic D u a l-In -L in e Package < W orking Voltage 3 Av. Rect. Current General Purpose Diodes Max. Forward Voltage V g. IF IS920 IS921 IS922 IS923 IS924 DO -35 DO -35 DO -35 DO -35 DO -35 200 200 200 200 200 50 100 150 200

Contextual Info: A POWERHOUSE RECTIFIERS U LTR A -F A S T R E C T IF IE R S PACKAGE 2 LEAD HERMETIC sBT\ VF 'R !rr VOLTS TJ=100°C AMPS us 50 0.9 0.001 35 15 100 0.9 0.001 35 SPD1515 15 150 0.9 0.001 35 SPD1520 15 200 0.9 0.001 35 SPD1530 15 300 1.15 0.001 35 SPD1540 15 400

UV diode 254 nm

Abstract: ixys 047 MD1000
Contextual Info: □IXYS Advanced Technical Data Power Schottky Rectifier V RSM V RRM V 2X10A VRRM = 35 - 45 V •n Type I ►I T M TO-220 AB V 35 45 35 45 Symbol U DSSK 20 Uv = DSSK 20-0035B S DSSK 20-0045B(S) Test Conditions Maximum Ratings (per diode) rms Uav Uav Tc = 135°C; rectangular, d = 0.5

Contextual Info: □IXYS Power Schottky Rectifier DSSK 28 U = 2 x 14 a VRRM = 35 - 45 V Preliminary data V RSM V RRM V I Type ►I I H TO-220 A B V 35 45 35 45 Symbol DSSK 28-0035A DSSK 28-0045A Test Conditions A Maximum Ratings per diode ^FAV Tc = 156°C; rectangular, d = 0.5

Contextual Info: SK 35 DGDL 126 T CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter,Chopper PI:9 <I <I¥; PG:9 =' U BS VIA -%2&'' ,.8& */'& '5& /E/&1 =' U BS YRWZ VI <I¥;U B F <I%,+A .5 U @ +' =^ Diode - Inverter,Chopper SEMITOP 4 3-phase bridge rectifier +

Contextual Info: DSS 10-0035/45A Power Schottky Rectifier U av V rrm VF 10 A 35 • 45 V 0.58 V Preliminary Data v RSM V, V V 35 45 35 45 * f TT\ Type 9 Vsz J ^ DSS 10-0035A DSS 10-0045A I C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings

Contextual Info: □IXYS DSEP 8-06A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 10 A V RRM 600 V t rr 35 ns TO-220 AC Type V 600 600 DSEP 8-06A A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings per diode U rms 35

1S1555

Abstract: 1S15555 1S1553/1S1555
Contextual Info: DO-35 B o_C DIM A B C D HD: MIN 25.40 3.03 0.46 1,52 MAX — 4.44 0,56 2.20 NOTES:1. CATHODE IS MARKED BY BAND 2. ALL DIMENSIONS ARE IN M.M. DO-35 Switching Diodes 500 mW Electrical Characteristics (At Ta=25°C, U n less Otherw ise Specified at V R Type

BZX 9V1

Abstract: BZX 5V6 bzx 2v7 6v86 8zx 5v6 BZX 150 bzx 8v2 BZX 4V7 8v2 BZX 46-C
Contextual Info: Voltage regulator diodes D O 35 P,ot 500 mW T amb 25 ° C T (yJ( max 175 °C Diodes de régulation de tension DO 35 The regulation voltages are defined according to the E 2 4 series. For other tolerances, consult the manufacturer Les tensions de régulation so n t définies selon ta série £ 24. N o u s consulter p o u r des tolérances différentes.

itt diodes

Abstract: ITT 914 4148 itt itt 1501 ITT2003 ITT700 ITT777 itt diodes 125
Contextual Info: Silicon Diodes Silicon Planar Diodes in “ d o u ble-plug” D O -35 and DO-7 g la ss en ca p su la tio n s Type M axim u m R a tin g s C h a ra c te ris tic s at Tamb = 2 5 C Si fa m b 25°C DO-7 DO-35 Vr V Vrm V lo mA @ @ T a mb = ca Je ^ 25 °C P tot

diac N413

Abstract: N413 N413M n413m diac diac bidirectional diode ht 40 diac VB01 diac diac with triac DIAC DO35
Contextual Info: DIAC N413 SILICON BIDIRECTIONAL TRIGGER DIODE FEATURES Suitable fo r T R I AC trigger • DO-35 package MAXIMUM RATINGS PACKAGE DIMENSIONS U nit • mm ITEM SYMBOL Peak Current *P Storage Temperature Tstg Junction Temperature Ti 0 2.2 MAX. RATING U N IT

Contextual Info: ANALOG DEVICES LC2M0S Precision Mini-DIP Analog Switch ADG419 FEATURES 44 V Supply M axim um Ratings V ss to V DD Analog Signal Range Low On Resistance < 35 Q U ltralow Power Dissipation (< 35 |iW ) Fast Transition Tim e (145 ns max) Break-Before-Make Switching Action

Contextual Info: LC2M0S Precision Mini-DIP Analog Switch ADG417 ANALOG DEVICES FEATURES 44 V Supply M axim um Ratings V ss to V DD Analog Signal Range Low On Resistance <35 i l U ltralo w Power Dissipation (<35 (jiW) Fast Switching Times t 0N (160 ns max) toFF (100 ns max)

Contextual Info: □IXYS DSEP 8-03A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 10 A V RRM 300 V t rr 30 ns TO-220 AC Type V 300 300 Symbol U rm s U avm U rm DSEP 8-03A Test Conditions 35 10 tbd A A A TVJ = 4 5 °C ; £ = 10 ms 50 Hz , sine

1rf820

Abstract: VN0600A IRF130 irf150 VN64GA 2N6658 IRF120 IRF122 IRF131 IRF140
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

1RF820

Abstract: VN64GA 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

g417b

Contextual Info: ANALOG DEVICES LC 2M0S Precision Mini-DIP Analog Switch A D G 4 17 FEATURES 44 V Supply M axim um Ratings V ss to V DD Analog Signal Range Low On Resistance <35 i l U ltralo w Power Dissipation (<35 (jiW) Fast Switching Times t 0N (160 ns max) toFF (100 ns max)

VN64GA

Abstract: 1rf820 IRF740 VN1001A 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

VN64GA

Abstract: 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150 IRF152
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

VN64GA

Abstract: VN-99-A VN1000A 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

FA-238 25.0000MB-C3

Abstract: C0402X7R100
Contextual Info: Si 5 3 3 8 - EVB Si5330/34/35/38 E VALUATION B OA RD U SER ’ S G UIDE Description EVB Features The Si5338-EVB is used for evaluating the Si5330/34/ 35/38 family of any-frequency, any-output clock generators and clock buffers.  Fully powered from a single USB port.

VN64GA

Abstract: IRF140 IRF142 IRF141 75 LS 541 IRF143 IRF540 Part number 543 20 018 00 2N6658 IRF130
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

2N6657

Abstract: 2N6658 VN66AF VN67AA 2N6656 VN64GA VN88AF VN-99-A 2N6657 siliconix IRF120
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

1RF720

Abstract: VN64GA 1rf820 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35