U 35 DIODE Search Results

IN647

Abstract: IN645 CA500 diode oa202 TID125 TID126 TID139N 100v 500ma diode IS113 OA202
Contextual Info: T In e x a s D io de A rra y s P lastic D u a l-In -L in e Package < W orking Voltage 3 Av. Rect. Current General Purpose Diodes Max. Forward Voltage V g. IF IS920 IS921 IS922 IS923 IS924 DO -35 DO -35 DO -35 DO -35 DO -35 200 200 200 200 200 50 100 150 200

Contextual Info: A POWERHOUSE RECTIFIERS U LTR A -F A S T R E C T IF IE R S PACKAGE 2 LEAD HERMETIC sBT\ VF 'R !rr VOLTS TJ=100°C AMPS us 50 0.9 0.001 35 15 100 0.9 0.001 35 SPD1515 15 150 0.9 0.001 35 SPD1520 15 200 0.9 0.001 35 SPD1530 15 300 1.15 0.001 35 SPD1540 15 400

UV diode 254 nm

Abstract: ixys 047 MD1000
Contextual Info: □IXYS Advanced Technical Data Power Schottky Rectifier V RSM V RRM V 2X10A VRRM = 35 - 45 V •n Type I ►I T M TO-220 AB V 35 45 35 45 Symbol U DSSK 20 Uv = DSSK 20-0035B S DSSK 20-0045B(S) Test Conditions Maximum Ratings (per diode) rms Uav Uav Tc = 135°C; rectangular, d = 0.5

Contextual Info: □IXYS Power Schottky Rectifier DSSK 28 U = 2 x 14 a VRRM = 35 - 45 V Preliminary data V RSM V RRM V I Type ►I I H TO-220 A B V 35 45 35 45 Symbol DSSK 28-0035A DSSK 28-0045A Test Conditions A Maximum Ratings per diode ^FAV Tc = 156°C; rectangular, d = 0.5

Contextual Info: DSS 10-0035/45A Power Schottky Rectifier U av V rrm VF 10 A 35 • 45 V 0.58 V Preliminary Data v RSM V, V V 35 45 35 45 * f TT\ Type 9 Vsz J ^ DSS 10-0035A DSS 10-0045A I C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings

Contextual Info: □IXYS DSEP 8-06A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 10 A V RRM 600 V t rr 35 ns TO-220 AC Type V 600 600 DSEP 8-06A A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings per diode U rms 35

1S1555

Abstract: 1S15555 1S1553/1S1555
Contextual Info: DO-35 B o_C DIM A B C D HD: MIN 25.40 3.03 0.46 1,52 MAX — 4.44 0,56 2.20 NOTES:1. CATHODE IS MARKED BY BAND 2. ALL DIMENSIONS ARE IN M.M. DO-35 Switching Diodes 500 mW Electrical Characteristics (At Ta=25°C, U n less Otherw ise Specified at V R Type

BZX 9V1

Abstract: BZX 5V6 bzx 2v7 6v86 8zx 5v6 BZX 150 bzx 8v2 BZX 4V7 8v2 BZX 46-C
Contextual Info: Voltage regulator diodes D O 35 P,ot 500 mW T amb 25 ° C T (yJ( max 175 °C Diodes de régulation de tension DO 35 The regulation voltages are defined according to the E 2 4 series. For other tolerances, consult the manufacturer Les tensions de régulation so n t définies selon ta série £ 24. N o u s consulter p o u r des tolérances différentes.

diac N413

Abstract: N413 N413M n413m diac diac bidirectional diode ht 40 diac VB01 diac diac with triac DIAC DO35
Contextual Info: DIAC N413 SILICON BIDIRECTIONAL TRIGGER DIODE FEATURES Suitable fo r T R I AC trigger • DO-35 package MAXIMUM RATINGS PACKAGE DIMENSIONS U nit • mm ITEM SYMBOL Peak Current *P Storage Temperature Tstg Junction Temperature Ti 0 2.2 MAX. RATING U N IT

Contextual Info: ANALOG DEVICES LC2M0S Precision Mini-DIP Analog Switch ADG419 FEATURES 44 V Supply M axim um Ratings V ss to V DD Analog Signal Range Low On Resistance < 35 Q U ltralow Power Dissipation (< 35 |iW ) Fast Transition Tim e (145 ns max) Break-Before-Make Switching Action

Contextual Info: ill h a r fr is W DG411, DG412 S E M I C O N D U C T O R Monolithic Quad SPST CMOS Analog Switches November 1994 Description Features • ON-Resistance <35£l Max • Low Power Consumption P0 <35|iW • Fast Switching Action • ton <175ns ■ tgpp <145ns

g417b

Contextual Info: ANALOG DEVICES LC 2M0S Precision Mini-DIP Analog Switch A D G 4 17 FEATURES 44 V Supply M axim um Ratings V ss to V DD Analog Signal Range Low On Resistance <35 i l U ltralo w Power Dissipation (<35 (jiW) Fast Switching Times t 0N (160 ns max) toFF (100 ns max)

VN64GA

Abstract: 1rf820 IRF740 VN1001A 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

VN64GA

Abstract: 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150 IRF152
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

SF 369

Abstract: SFD46 3595 BAX17 1N3595
Contextual Info: DO 35 DO 7 CB 1021 (CB 26 Tamb 25 °C Silicon signal diodes - High voltage switching Diodes de signaI au silicium - Commutation haute tension B oîtier V R •V RM (V) 'o (m A) max max u. Case u. > Type {V ) / Im A ) max IR / Vr I n A ) / (V) IR /V max Tamb 'SO °C

Contextual Info: □IXYS DSEP 29-06A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 30 A V RRM 600 V t rr 35 ns TO-220 AC Type V 600 600 Symbol DSEP 29-06A Test Conditions Maximum Ratings per diode U rms U rm Tc = 130°C ; rectangular, d = 0.5

Contextual Info: pin diode, precision 4t,E m fiDI:,fi611 DDDlbb^ 13s msec Digital Step Attenuators SCIENTIFIC/ MINI-CIRCUITS with TTL Control Inputs 0.5 to 20 dB steps, up to 35 dB attenuation 10 MHz to 1 GHz ZFAT TOAT F R EQ U EN C Y RAN G E M H z VSWR A TTEN U A TIO N

Contextual Info: P h ilip s S e m ico n d u cto rs P ro d u ct s p e cifica tio n High-speed diodes 1N914; 1N916 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package • High switching speed: max. 4 ns The 1N914; 1N916 are high-speed switching diodes fabricated in planar

26MB100B

Abstract: 26MB60B
Contextual Info: EbE D INTERNATIONAL RECTIFIER 4Ô55452 001D731 5 • International IxorI Rectifier Power Modules Single phase diode bridges, 10 to 35 AMPS Part Number U. S. S eries 100JBÖ5L 100JB1L 100JB2L 100JB4L 100JB6L 100JB8L: 100JB10L 100JB12U 26MB05B 26MB10B 26MB20B

SL4732

Abstract: SL4731 si4734 zener 4744 SL4728 SL4735
Contextual Info: IH R G E SURFACE MOUNT ZENER DIODES 500mW ZENER DIODES / MINI-MELF SL-35 CASE 38 Device Type S15226B SL5227B SL5226B SL5229B SL5230B : SL52318 SL5232B SL5233B 5L5234B S15235B S15236S • SL5237B U SL5238B Ü SL5239B 1 SÌ524GB SI5241B SL5242B SL5243B SL5244B

74FCT645A

Contextual Info: FAST CMOS NON-INVERTING BUFFER TRANSCEIVER IDT 54/74FCT645 IDT 54/74FCT645A FEATURES: DESCRIPTION: • IDT54/74FCT645 equivalent to FAST speed; IDT54/74FCT645A 35% faster than FAST ™ • Equivalent to F A S T o u tp u t drive over full temperature and voltage supply extremes

MMD805-T86

Abstract: MMD-820-T86 MMD840 T-86 MMD-810
Contextual Info: MMD Series Silicon M ultiplier SRD Diodes metelics T CORPORATION Features Applications • L o w Rs • C om b generator • Transition times d o w n to 35 ps • M ultiplier • O u tp u t combs to 40 GHz • Pulse generator • Higher efficiency • Hi-Rel available (MIL-S-19500, MIL-STD-750)

R820T

Abstract: MMD-820-T86 metelics FSCM 59365 MMD-810 MMD805-T86 MMD-840-T86 MMD840 MMD837-T86
Contextual Info: MMD Serles Silicon M ultiplier SRD Diodes metelics CORPORATION Features Applications • L o w Rs • C om b generator • Transition times d o w n to 35 ps • M ultiplier • O u tp u t combs to 40 GHz • Pulse generator • Higher efficiency • Hi-Rel available (MIL-S-19500. MIL-STD-750)

Contextual Info: FUJI 2SK2691-01R N-channel MOS-FET IS U J M s u ltìU K FAP-IIIB Series 60V > Features 0,0 I Q 70A 100W Outline Drawing TO-3PF - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 5.5 .35 > Applications - Motor Control