TYPE EV 8200 - E Search Results

bq 738

Abstract: IRF 1470 pj 989 IRF 460 Application 0/bq 738
Contextual Info: IMS-5 Vishay Dale Inductors, Commercial, Molded, Shielded, Axial Leaded FEATURES ELECTRICAL SPECIFICATIONS Inductance Tolerance: ± 10 % standard, ± 5 % available Insulation Resistance: 1000 MΩ minimum per MIL-STD-202, method 302, test condition B Dielectric Withstanding Voltage: 1000 VAC per

DIODE RK 69

Abstract: BA rx transistor 111-BA ba rx varistor 741 CD 741 741 CN abb combiflex rtxe em 513 diode
Contextual Info: RTXE Component blocks COMBIFLEX 1MRK 513 019-BEN Page 1 Issued: September 2004 Revision: A Data subject to change without notice SE820256 Features • Requires no extra space. • For use in protection and control systems • To be mounted at the rear of the terminal

Contextual Info: MAX5961ETM+ RELIABILITY REPORT FOR MAX5961ETM+ PLASTIC ENCAPSULATED DEVICES December 18, 2008 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Ken Wendel Quality Assurance Director, Reliability Engineering Maxim Integrated Products. All rights reserved.

irf 940

Abstract: IRF 870 marking B48 LT 5239 H irf 560 vishay sj 56 marking code EB 38 LT 5239 B48 MARKING CODE 1/irf 1420
Contextual Info: IMS-5WD-40 Vishay Dale Inductors, Miniature, Shielded, Axial Leaded FEATURES • Miniature shielded inductor • High inductance-to-size ratio • Inductance range is 0.10 H to 56 000 μH • Encapsulated non-flammable shielded unit • 0.164" [4.17 mm] diameter by 0.450" [11.43 mm] long

Contextual Info: LARGE ALUMINUM ELECTROLYTIC CAPACITORS LARGE ALUMINUM ELECTROLYTIC CAPACITORS EV EY High ripple Current, High Reliability Series •High ripple current compared with GF series ·Newly improved long life guaranteed for 5000 hours load life at 105° C ·Suited for the general-purpose inverter

tic 2530

Abstract: rs 121 012
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS Miniature Sized, Low Impedance,High Reliability series Smaller Low Impedance Long Life Anti-Solvent Feature ALUMINUM ELECTROLYTIC CAPACITORS HE n îcK iîco n Lo w im p e d a n c e a n d hig h re lia b ility w ith s ta n d in g 4 0 0 0 h o u rs to 1 0 0 0 0 h o u rs .

Contextual Info: 2009.10.21 14:23 페이지174 001 refine-4도 2540DPI 175LPI T LARGE ALUMINUM ELECTROLYTIC CAPACITORS LARGE ALUMINUM ELECTROLYTIC CAPACITORS EV EY High ripple Current, High Reliability Series ・High ripple current compared with GF series ・Newly improved long life guaranteed for 5000 hours load life at 105°

photodiode ge

Abstract: TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation
Contextual Info: Physics and Technology Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors consist of two or more different elements of group three (e.g.,

TSAL6200

Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
Contextual Info: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si

uv phototransistor

Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
Contextual Info: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200

uv phototransistor

Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200

BPW21R

Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell
Contextual Info: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al

Physics and Technology

Abstract: physics pn junction diode structure
Contextual Info: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors

HP 2200 optocoupler

Abstract: HP 2601 optocoupler Optocouplers hp 2200 HP 3700 optocoupler optocoupler HP 4100 HP optocoupler 4100 4200 optocoupler HP 4200 HP optocoupler 4200 HP 4661 optocoupler
Contextual Info: That mLEMHEWLETT PACKARD Optocoupler Input-Output Endurance Voltage Application Note 1074 Introduction A m ajor concern of circuit designers is the reliability of an optocoupler when subjected to repeated and long-term, high-voltage stress between its input and output. Most of the

CEAUF2W471M40

Abstract: LMM40 CEAUF CEAUF2W471 CEAUF2D CEAUF1K392M41 40x60 ChemiCon SL
Contextual Info: united CHEMI-CON S U B S I D I A R I E S OF ALUMINUM ELECTROLYTIC CAPACITORS CEAUF SERIES N I P P O N C H t M I •G O N . I N C CEAUF SERIES SNAP-IN TERMINALS FOR + 105° C OPERATION • FEATURES 1. Large capacitance in small size, smaller than TSU , HSU

Contextual Info: 05 2009.10.21 14:23 페이지137 001 refine-4도 2540DPI 175LPI 5 T LARGE ALUMINUM ELECTROLYTIC CAPACITORS 05 2009.10.21 14:23 페이지138 001 refine-4도 2540DPI 175LPI T LARGE ALUMINUM ELECTROLYTIC CAPACITORS LARGE ALUMINUM ELECTROLYTIC CAPACITORS PART NUMBER SYSTEM

efd-25 transformer

Abstract: 2616P 2213P Transformer ETD-29 12U25 FERRITE TRANSFORMER ETD ETD 34 24 V transformer ETD 52 Xenon 7000 EPCOS core PS 35
Contextual Info: Ferrites Ferrite und Zubehör Ferrites and Accessories SIFERRIT-Material Frequenzbereich Frequency range MHz U 17 10 …220 10 – 30 % K 12 3 … 40 26 – 25 % K1 1,5 … 12 M 33 0,2 … N 48 0,001 … 0,1 2300 – 25 % N 26 0,001 … 0,1 2300 – 25 % K 10

BPW-20R

Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200

Contextual Info: PRELIMINARY ICS840001I-34 FEMTOCLOCKS CRYSTAL-TOLVCMOS/LVTTL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS840001I-34 is a two output LVCMOS/ ICS LV T T L S y n t h e s i z e r a n d a m e m b e r o f t h e HiPerClockS™ H i Pe r C l o c k s T M fa m i l y o f h i g h p e r fo r m a n c e

Photo diode TFK S 186 P

Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Contextual Info: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

R2A11301FT

Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
Contextual Info: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV

RK 723 007

Abstract: DIODE RK 306 SELECTOR SWITCH ASEA ABG RK 795 001-aa RK741 RK717 CATALOGUE SK 63-1 E ASEA ABG 10 RK795 RK70-10E
Contextual Info: C a ta lo g u e R K 70- 10E Edition 1 5930-09 Su persecTes calatog ues R K 7 M O E RK 74-1OE and R K 7 8 -2 E Relay accessories Pushbuttons Component blocks ASEA T h e re lay accesso ries a re used to provide a relay, protective relay or other equip m en t, with

5718 TUBE

Abstract: 5718 on 5718 BALLANTINE subminiature 5718 SM 4108 400C 450C subminiature tubes LA 4108
Contextual Info: SYLVANIA SYLVANIAjpU' engineering data service ^ M ECHANICAL DATA 5718 QUICK REFERENCE DATA B u l b .T-3 B a s e .E8-10, S u b m in ia tu re B u tto n F lex ib le L eads

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission