TY SMD DIODE Search Results

marking C1

Abstract: 1SS387 maxim package marking
Contextual Info: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS387 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Small Package + +0.1 0.6-0.1 - Low forward voltage :VF 3 = 0.98V(TYP.) Fast Forward Voltage :trr = 1.6ns(TYP.) 0.77max :CT = 0.5pF(TY

KPT-3216

Abstract: KPT-3216SYD
Contextual Info: Kingbright 3.2x1.6mm SUPER THIN SMD CHIP LED LAMPS KPT-3216 Package D im ensions Features •3.2mmx1.6mmSMTLED.0.75mmTHICKNESS. •LOWPOWERCONSUMPTION. POLAR[TY MARK •WIDE VIEWING ANGLE. •IDEAL FOR BACKLIGHT AND INDICATOR. w. n to •VARIOUS COLORS AND LENS TYPES AVAILABLE.

SMD diode C5C

Abstract: n4148 smd code marking LF sot23 1N4148 SOD-80 diode 1n4148 smd diode 1n SMD diode SMD diode CA6 diode a 4 w Diode N4148
Contextual Info: SMD Switching Diodes TY P E NO. CA S E D E S C R IP TIO N V ram VOLTS MAX •o <mA) BAS28 SOT-143 DUAL S W ITC H IN G DIODE, ISO LATED 85 B AS 56 C LL914 SO T-143 DUA L HIG H C U R R E N T DIO DE, ISOLATED S O D -8O L E A D L E S S SW ITC H IN G DIODE C L L2003

QW-BA011

Abstract: smd diode 723 smd diode Lf smd diodes smd schottky diode marking 05 smd diode sod723
Contextual Info: COAtCHII’ SMD Schottky Barrier Diode S M D D io d e s S p e c ia lis t CDBP0130R * lo=100mA V r=30V RoHS Device Features - S m a l l s u r f a c e m o u n t i n g t yp e. - L o w r e v e r s e c u r r e n t a nd l o w f o r w a r d v o l t a g e . - H i g h rel iabi li ty.

SMD DIODE MARKING 14

Abstract: CDBP00340 smd diodes diode schottky 40v 30ma smd schottky diode marking 05 smd diode sod723
Contextual Info: COAtCHII’ SMD Schottky Barrier Diode S M D D io d e s S p e c ia lis t CDBP00340 lo=30mA V r=40V RoHS Device * Features - S m a l l s u r f a c e m o u n t i n g t yp e. - L o w r e v e r s e c u r r e n t a nd l o w f o r w a r d v o l t a g e . - H i g h rel iabi li ty.

80054-XX

Contextual Info: SQUARE PIN SURFACE MOUNT DIODES These PIN diodes are manufactured in a square package SMD for surface mount applications. These packages utilise ceramic package technology with low Inductance and axial terminations. This design simplifies automatic pick and place Indexing and assembly. The termination contacts

APJKA4008PWC

Abstract: wc smd diode
Contextual Info: 4.0X0.8 mm SMD CHIP LED LAMP APJKA4008PWC Features l4.0mmx0.8mm SMT LED, 1.4mm THICKNESS. lLOW POWER CONSUMPTION. l WIDE l IDEAL VIEWING ANGLE. WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode. FOR BACKLIGHT AND INDICATOR.

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMP AT T E N T I O N OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES APHK1608MWC Features Description lLOW POWER CONSUMPTION. Light Emitting Diode. l1.6mmx0.8mm SMT LED, 0.7mm THICKNESS. lWIDE VIEWING ANGLE.

3020pw

Contextual Info: 3.0x2.0mm SMD CHIP LED LAMP AT T E N T I O N OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES KPK-3020PWC Features Description lLOW POWER CONSUMPTION. Light Emitting Diode. l3.0mmX2.0mm SMT LED, 1.3mm THICKNESS. lWIDE VIEWING ANGLE.

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMP AT T E N T I O N OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES PRELIMINARY SPEC KPHK-1608MWC Features Description lLOW POWER CONSUMPTION. Light Emitting Diode. l1.6mmx0.8mm SMT LED, 0.7mm THICKNESS.

KPHK-1608QWC-C

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMP AT T E N T I O N OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES PRELIMINARY SPEC KPHK-1608QWC-C WHITE Features Description lLOW POWER CONSUMPTION. SiC Light Emitting Diode. l1.6mmx0.8mm SMT LED, 0.7mm THICKNESS.

APJKA4008MWC

Contextual Info: 4.0X0.8 mm SMD CHIP LED LAMP APJKA4008MWC Features Description lLOW SiC Light Emitting Diode. l4.0mmx0.8mm SMT LED, 1.4mm THICKNESS. POWER CONSUMPTION. l WIDE l IDEAL VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR. l VARIOUS COLORS AND LENS TYPES AVAILABLE. lPACKAGE : 2000PCS / REEL.

SMD DIODE MY

Abstract: APKA2810MWC
Contextual Info: 2.8X1.0mm SMD CHIP LED LAMP APKA2810MWC Features Description lLOW SiC Light Emitting Diode. l2.8mmX1.0mm SMT LED, 1.2mm THICKNESS. POWER CONSUMPTION. lIDEAL FOR BACKLIGHT AND INDICATOR. l VARIOUS COLORS AND LENS TYPES AVAILABLE. lPACKAGE : 2000PCS / REEL.

Kingbright

Abstract: APK3020SGC LED kingbright green super green led lamp kingbright smd led kingbright
Contextual Info: Kingbright 3.0x2.0mm SMD CHIP LED LAMP APK3020SGC Description Features !3.0mmX2.0mm !LOW The Super Bright Green source color devices are made SMT LED, 1.3mm THICKNESS. with Gallium Phosphide Green Light Emitting Diode. POWER CONSUMPTION. !WIDE !IDEAL VIEWING ANGLE.

APH1608M

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMP APH1608MGCK MEGA GREEN Description Features z1.6mmx0.8mm zLOW SMT LED, 0.65mm THICKNESS. POWER CONSUMPTION. zWIDE zIDEAL The Mega Green source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. VIEWING ANGLE.

Contextual Info: 3.0x1.0mm SMD CHIP LED LAMP APA3010PBCK BLUE Features Description z3.0mmx1.0mm zLOW SMT LED, 2.0mm THICKNESS. POWER CONSUMPTION. zWIDE zIDEAL The Blue source color devices are made with InGaN onSiC Light Emitting Diode. VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR.

KP-2012VGC

Abstract: s525
Contextual Info: 2.0x1.2mm SMD CHIP LED LAMP KP-2012VGC Features Description z2.0mmx1.2mm zLOW SMT LED, 1.1mm THICKNESS. POWER CONSUMPTION. zWIDE zIDEAL The Green source color devices are made with DH InGaN on GaAs substrate Light Emitting Diode. VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR.

Contextual Info: 2.0X1.25mm SMD CHIP LED LAMP AT T E N T I O N OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES KPTK-2012QWC-C WHITE Features Description lLOW Sapphire Light Emitting Diode. l2.0mmX1.25mm SMT LED, 0.75mm THICKNESS. POWER CONSUMPTION.

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMP AP1608PBCK Description Features z1.6mmx0.8mm zLOW SMT LED, 1.1mm THICKNESS. on SiC Light Emitting Diode. POWER CONSUMPTION. zWIDE zIDEAL The Blue source color devices are made with InGaN VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR.

Contextual Info: 2.0x1.2mm SMD CHIP LED LAMP AP2012VGC Features Description z2.0mmx1.2mm zLOW SMT LED, 1.1mm THICKNESS. POWER CONSUMPTION. zWIDE zIDEAL The Green source color devices are made with DH InGaN on GaAs substrate Light Emitting Diode. VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR.

KPHK-1608TGC

Abstract: sw 2596 pwm
Contextual Info: 1.6x0.8mm SMD CHIP LED LAMP KPHK-1608TGC GREEN Features Description !1.6mmx0.8mm SMT LED, 0.7mm THICKNESS. The Green source color devices are made with !LOW POWER CONSUMPTION. InGaN on SiC Light Emitting Diode. !WIDE VIEWING ANGLE. ! IDEAL FOR BACK LIGHT AND INDICATOR.

KA-3528VGC

Contextual Info: 3.5x2.8 mm SMD CHIP LED LAMP KA-3528VGC GREEN Features Description !SINGLE COLOR. The Green source color devices are made with InGaN ! SUITABLE on SiC Light Emitting Diode. FOR ALL SMT ASSEMBLY AND SOLDER PROCESS. ! AVAILABLE ON TAPE AND REEL. !IDEAL FOR BACKLIGHTING.

Contextual Info: 3.5x2.8 mm SMD CHIP LED LAMP KA-3528VGC-E GREEN Features Description !SINGLE COLOR. The Green source color devices are made with InGaN !SUITABLE FOR ALL SMT ASSEMBLY AND SOLDER on SiC Light Emitting Diode. PROCESS. !AVAILABLE ON TAPE AND REEL. !IDEAL FOR BACKLIGHTING.

Contextual Info: 4.0x3.0mm SMD CHIP LED LAMP PRELIMINARY SPEC KPEKA-4030TGC Features Description !4.0mmx3.0mm SMT LED, 2.65mm THICKNESS. The Green source color devices are made with !LOW POWER CONSUMPTION. InGaN on SiC Light Emitting Diode. GREEN !WIDE VIEWING ANGLE. !IDEAL FOR BACKLIGHT AND INDICATOR.