TY 617 EQUIVALENT Search Results

D821A

Abstract: d823a
Contextual Info: • 1N821 THRU 1N829 AVAILABLE IN CD821 JANC thru • MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS CD829A • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N821 THRU 1N829 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES

la4603

Abstract: Design with PIN diode limiter alpha Alpha Industries pin diodes 20/LA4606
Contextual Info: 03Alpha Limiter Diodes CLA Series Features • Low Loss ■ 4 kW Coarse Limiters ■ 200 Watt Midrange Limiters ■ 10 mW C le an -U p Limiters Description Chip Dimensions Alpha has pioneered the microwave limiter diode. Because all phases of manufacturing, from design

zener diode 47-10

Abstract: 1N4099 1N4135 CD4099 CD4100 CD4101 CD4102 CD4103 CD4104 CD4105
Contextual Info: CD4099 • 1N4099 THRU 1N4135 AVAILABLE IN JANC thru • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD4135 • LOW LEAKAGE CURRENT CHARACTERISTICS • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES • ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135

D5250

Abstract: 5225B 5221B CD5221B
Contextual Info: CD5221B ZENER DIODE CHIPS ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE thru CD5272B ELECTRICALLY EQUIVALENT TO 1N5221B THRU 1N5272B GENERAL PURPOSE 500 mW CHIPS COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES ELECTRICAL CHARACTERISTICS @ 25 C, unless otherwise specified

1N409

Abstract: cd 4560 D4126 4106C
Contextual Info: • 1N4099 THRU 1N4135 AVAILABLE IN CD4099 JANC thru • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD4135 • LOW LEAKAGE CURRENT CHARACTERISTICS • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES • ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135

PUT 2N6027

Abstract: PUT 2N6027/2N6028 equivalent transistor of 2n6027 2N6027-2N6028 N6028 UNITRODE U-66 PUT 2N6028 unijunction application note 2N6027 PUT specifications PUT Oscillator 2n6027
Contextual Info: PUTs 2N6027-2N6028 Planar, TO-92, Plastic FEATURES DESCR IPTIO N • • • • • • The Unitrode Programmable Unijunction Transistor is today’s preferred device for low cost tim ing circuits, oscillators, sensing circu its and a wide range of other applications

Solid State Switches

Contextual Info: CPOare CORPORATION OF Series OF Series OptoFILM Solid State Switches DESCRIPTION CP Clare’s “OF" series solid state switches feature advanced thick-film hybrid technology. Thermally efficient designs utilizing zero-cross turn-on and small package size offer cost effective design flexibility in the control of AC circuits.

Contextual Info: PIN RADIATION DETECTORS Features • High Photocurrent Sensitivity • High Reliability Construction • Fast Rise Time • Wide Dynamic Range • Hardness to Neutron Bombardment • Low Operating Voltage Description Silicon PIN devices are effective detectors

TS1902

Abstract: TS1222
Contextual Info: CPCIare OptoMOS TS Series GORPORATIO N OptoMOS® “T S ” Series Multifunction Solid State Telecom Switches DESCRIPTION CP Clare’s “TS” series telecom switches provide optimal function density for tip/ring interface circuits. The “TS” series incorporates an optically isolated

2N6546

Abstract: 2N6547 180I 20C1 2N5875 2N5877
Contextual Info: POWER TRANSISTORS 2N6546 2N6547 15A, 850V, Fast Switching, Silicon NPN Mesa DESCRIPTION These high voltage glass passivated power tra n s is to rs co m bin e fa s t s w itc h in g , low s a tu ra tio n voltage and rugged Es/b ca p a b ility . They are designed fo r use in o ff-lin e power

ty 617 equivalent

Abstract: B0140 MT619 FMMT619
Contextual Info: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSU E 3 - NOVEMBER 1995_ FEATURES * 625m W POWER DISSIPATION * * * * * lc CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed)

LE ATB S2W

Abstract: Q65110A8183 leatbs2w
Contextual Info: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE ATB S2W Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe

1032

Contextual Info: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 600 S E R IE S , 300V M ED IU M D U TY, 0.375" PITCH tit 1 I t 5 t w £ i i _ '_ !_ • ■ _ ■ CHARACTERISTICS T yp e of B lock Direct Mount Flat Base Painted, Nylon Unpainted, Nylon

Contextual Info: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE ATB S2W Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe

cp clare relay mercury wetted

Abstract: design of 4-20mA transmitter for bridge type transducer using op-amp lm358 4-20mA cp clare reed relay 0-10v to 4-20ma clare reed relays SWPS relay, reed 4 to 20ma current source circuit diagram lm358 clare relay mercury
Contextual Info: 2 70% '7 ° l 7 '7 o o < p f par June 1994 Lo t o s No. 15001 CP Clare Application Note LO C H O Linear Optocoupler Isolation amplifier circuit designs for Telecommunications, Industrial, Medical and Instrum entation Systems. The application note covers the LO C H O electrical

Contextual Info: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE A S2W, LE T S2W, LE B S2W Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

Contextual Info: ste 2 6 m ► LC2M0S High-Speed, Quad SPST Switch ANALOG DEVICES FEATURES 50ns max Switching Time Over Full Temperature Range Low Rqn 3011 typ Single Supply Specifications for + 10.8V to + 16.5V Operation Extended Plastic Temperature Range ( —40°C to +85°C)

J-STD-020B

Abstract: LE ATB S2W-JW-1 LBMB-24 G
Contextual Info: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE ATB S2W Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe

OHL02520

Abstract: nm533 LETS2W
Contextual Info: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE A S2W LE T S2W LE B S2W LE A S2W LE T S2W; LE B S2W Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe

2N5664

Abstract: cc 3053
Contextual Info: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 300V, Planar NPN JANTX, JANTX, JANTX, JANTX, FEATURES • Meets MIL-S-19500/455 • Collector-Base Voltage: up to 400V • D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JA N , JA N T X ,

Contextual Info: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE A S2W LE T S2W LE B S2W LE A S2W LE T S2W; LE B S2W Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe

LETS2W

Contextual Info: OSRAM OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE A S2W LE T S2W LE B S2W LE A S2W LE T S2W; LE B S2W Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe

Q65110A8184

Abstract: IEC 62471 osram
Contextual Info: OSRAM OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE A S2W LE T S2W LE B S2W LE A S2W LE T S2W; LE B S2W Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe