TWZ C7 Search Results

MB81C79

Abstract: mb81c79b-35
Contextual Info: October 1989 Edition 1.0 — FUJITSU D A TA S H EE T , MB81C79B-35/-45 CMOS 72K-BIT HIGH-SPEED SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C79B is a 8,192 words x 9 bits static random accasa memory

s29ws128n

Abstract: S71WS-Nx0 S29WS-N S71WS128NC0 S71WS256NC0 S71WS256ND0 S71WS512ND0 S71WS-N TSD084 UtRAM Density
Contextual Info: S71WS-Nx0 Based MCPs Stacked Multi-Chip Product MCP 128/256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with pSRAM Type 4 ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

MB81C79A

Abstract: MB81C79A-35 mb81c79 MB81C79A-45 N0-22 MB81C79A-45-W 3741B
Contextual Info: FUJITSU MICROELECTRONICS 47E D 3 7 4 T ? h 2 1 • T Ì 4 6 - 2 3 April 1990 Edition 3.0 FUjflSU DATA SHEET M B 8 1 C 79A -35/-45 CMOS 72K-BIT HIGH-SPEED SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C79A is a 8,192 words x 9 bits static random access memory

Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

P4C1026

Abstract: P4C1258
Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

Contextual Info: NEC NEC Electronics Inc. //PD4362 16,384 X 4-BIT STATIC MIX-MOS RAM A p ril 1988 Pin Configuration Description The /L/PD4362 is a 16,384-word by 4-bit static RAM fabricated with a short-channel, siiicon-gate M ix-M O S process. Its unique circuitry, using N-channel memory

Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

MB81C78A-35

Abstract: MB81C78A ICE 47E fujitsu 1988 IP-28P-M
Contextual Info: FUJITSU MICROELECTRONICS 47E D BTMTTbS 0G1B77S 0 « F M I /Z April 1990 Edition 3.0 DATA SHEET _ FUJITSU MB81C78A-35/-45 CMOS 64K-BIT HIGH-SPEED SRAM 8K Words x 8 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C78A is a 8,192 words x 8 bits static random access memory

70V27

Abstract: A14L IDT70V27 IDT70V27S
Contextual Info: HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM IDT70V27S/L Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/35ns (max.)

70V27

Abstract: A14L IDT70V27 IDT70V27S
Contextual Info: HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Industrial: 35ns max. – Commercial: 15/20/25/35/55ns (max.)

IDT70V27

Abstract: 70V27 A14L IDT70V27S cea h12
Contextual Info: HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ IDT70V27 easily expands data bus width to 32 bits or more using the Master/Slave select when cascading more than one device M/S = VIH for BUSY output flag on Master, M/S = VIL for BUSY input on Slave

IDT70V27PF

Abstract: 70V27 A14L IDT70V27 IDT70V27S cea h12
Contextual Info: HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Industrial: 35ns max. – Commercial: 15/20/25/35/55ns (max.) Low-power operation

5L25

Abstract: A12L A13L IDT70T15
Contextual Info: HIGH-SPEED 2.5V 16/8K X 9 DUAL-PORT STATIC RAM IDT70T16/5L Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:20/25ns max. – Industrial: 25ns (max.) Low-power operation

A12L

Abstract: 70P25
Contextual Info: PRELIMINARY IDT70P256/246L VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM Š Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Industrial: 55ns max. Low-power operation

BY100

Abstract: A12L IDT70P248 70P24 70P25
Contextual Info: VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Industrial: 55ns max. Low-power operation IDT70P258/248L Active: 27mW (typ.)

248L

Abstract: A12L IDT70P248 0403A1 BY100- 70P258 70P24 70P25
Contextual Info: Š VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Industrial: 55ns max. Low-power operation IDT70P258/248L

70T34

Contextual Info: HIGH-SPEED 2.5V 8/4K x 18 DUAL-PORT 8/4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access IDT70T35/34L IDT70T25/24L – Commercial: 20/25ns (max.)

BY100

Abstract: Power Diode BY100 A12L IDT70P247
Contextual Info: VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM IDT70P257/247L Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Industrial: 55ns max. Low-power operation IDT70P257/247L

71WS512ND

Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Distinctive Characteristics

SY 3803 12A

Abstract: dw02a
Contextual Info: i t IDT H IG H - S P E E D C T A T ir ^ d a u ^ L * P O R T S T A T IC R A M Featu res: * True Dual-Ported memory cells which allow simultaneous access of the same memory location * High-speed access - * industrial: 35ns max. Commercial: 15/2Q/25/35/55ns (max.)

O12P3

Abstract: o14p IDT70P5258ML
Contextual Info: IDT70P5258ML IDT70P525ML IDT70V525ML HIGH-SPEED 8K x 16 TriPort STATIC RAM Š Features ◆ ◆ ◆ High-speed access – Industrial: 55ns max. Low-power operation – IDT70P5258ML and IDT70P525ML Active: 54mW (typ.) Standby: 7.2µW (typ.) – IDT70V525ML

Contextual Info: LRS1341/LRS1342 Stacked Chip 16M Flash Memory and 2M SRAM Data Sheet FEATURES – Thirty-one 32K-word main blocks – Top/Bottom boot location versions – Extended cycling capability – 100,000 block erase cycles – Enhanced automated suspend options – Word write suspend to read