TWS - 315 Search Results

AVS302N

Abstract: ASS4L4SN-407
Contextual Info: ø25mm TWS Series Switches & Pilot Lights 14/03/18 ø25 TWS Series (Selection Guide) Function Category Flush Extended Pushbutton Extended with Half Shroud Momentary/Maintained ABS1 AOS1 9 ABS2 AOS2 9 ABGS2 AOGS2 9 ABFS2 AOFS2 C-9 Mushroom Pushlock Turn Reset

tws315

Abstract: RWS - 315 TWS-315 transmitter 433.92 MHz 5v ask ht12e ask module HT 12E APPLICATION transmitter 433.92 MHz 5v tws bs3 433 RWS 315 TWS-BS3
Contextual Info: WEN SHING DATA SHEET Transmitter Module : TWS-BS3 433.92 MHz *Frequency Range: 433.92 MHz *Modulate Mode: ASK *Circuit Shape: SAW *Date Rate: 8kbps *Supply Voltage: 3~ 12 V *Power Supply and All Input / Output Pins: -0.3 to +12.0 V *Non-Operating Case Temperature: -20 to +85

EM532323Q-6

Abstract: DQ3225
Contextual Info: EtronTech EM532323 64K x 32 Pipelined Burst SRAM • • • • • • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT# VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2 3 4 5 6 7 8 9

tws 418

Abstract: 8051 thermostat LM78A LSI53C040 AUTOMATIC STREET LIGHT CONTROLLER using 8051 8051 microcontroller based temperature control fan Accuracy Digital Thermometer opcdo moving message display using Led and 8051 microcontroller INTEL 80C32
Contextual Info: PROGRAMMING GUIDE LSI53C040 Enclosure Services Processor Version 1.1 December 2000 S14021.A This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.

F9901

Abstract: LQFP48 MB40C328 MB40C328PFV
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-28216-1E ASSP For Video Applications CMOS 8-bit 100 MSPS A/D Converter MB40C328 • DESCRIPTION MB40C328 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • •

F9901

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-28216-1E ASSP For Video Applications CMOS 8-bit 100 MSPS A/D Converter MB40C328 • DESCRIPTION MB40C328 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • • • • • • • Resolution

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-28215-1E ASSP For Video Applications CMOS 8-bit 140 MSPS A/D Converter MB40C318 • DESCRIPTION MB40C318 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • • Resolution Linearity error

F9901

Abstract: LQFP48 MB40C318 MB40C318PFV
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-28215-1E ASSP For Video Applications CMOS 8-bit 140 MSPS A/D Converter MB40C318 • DESCRIPTION MB40C318 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • •

64KX64

Abstract: p8000 UT6164C64AQ UT6164C64A
Contextual Info:  UTRON UT6164C64A 64K X 64 SYNCHRONOUS PIPELINED BURST CMOS SRAM Rev 1.1 FEATURES Single 3.3V -5% and +10% power supply Support 2.5V I/O Fast clock access time:

EM531323-5

Abstract: TWS - 315
Contextual Info: EtronTech Em531323 32K x 32 Pipelined Burst SRAM • • • • • • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT# VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2 3 4 5 6 7 8 9

EM542323TQ-11

Abstract: TQFP 14X20
Contextual Info: EtronTech EM542323 2.5V/3.3V I/O 64K x 32 Pipelined Burst SRAM Preliminary 9/97 • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT # VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2

Contextual Info: EtronTech EM541323 2.5V/3.3V I/O 32K x 32 Pipelined Burst SRAM Preliminary 01/98 • • • • • • • A6 A7 CE1# CE2 BW4# BW3# BW2# BW1# CE3# VDD VSS CLK GW# BWE# OE# ADSC# ADSP# ADV# A8 A9 NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23

tda 2015

Abstract: TWS 434 tda AMP 12V Block Diagram tda 8842 TDA 1008 A tda 136 FIFO CAM based on leakage current techniques mux configuration bpw 50 tda 2084
Contextual Info: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1

MB85R256s

Abstract: FPT-28P-M03 FPT-28P-M17 MB85R256 MB85R256PF MB85R256PFTN FUJITSU FRAM TCA 150
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-3E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256 • DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-4E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256 • DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

tda 9594

Abstract: tda 85630 tda 2622 TDA 452 56-1556 tda 8375 pin voltage tda 2165 tda 4603 TDA 1028 TDA 8631
Contextual Info: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1

th 2167.1

Abstract: tda 7244 TDA 3553 TDA 2010 Circuit tda 266 tda 8895 tda 8956 tda 2222 BPW 34 datasheet TDA 2010
Contextual Info: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1

TDA 7927

Abstract: tda 9346 TDA 7877 55320 tda 8207 TDA 8517 TDA 5210 A3 TDA 8633 tda 8908 TDA 3807
Contextual Info: SPSRAM_LP Low-Power Single-Port Synchronous Static RAM Features Logic Symbol spsram_lp_<w>x<b>m<y> CK CSN WEN DOUT [b–1:0] OEN A [m-1:0] DI [b–1:0] NOTES: 1. Words w is the number of words. 2. Bpw(b) is the number of bits per word. 3. Ymux(y) is one of the column mux types.

tda 85630

Abstract: tda 7625 TDA 1007 tda 1282 tda 1700 bpw 104 tda 810 tda 1512 tda 266 TDA 452
Contextual Info: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1

MB85R256HPF

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-2E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

000read

Abstract: MB85R256HPF FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN MB85R256HPFTN TCA 120
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-1E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

MB85R256F

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-1v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MB85R256HPF-G-BNDAE1

Abstract: FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN-G-BNDAE1 MB85R256HPFGBN
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13106-4Ea Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

MB85R256HPF-G-BNDAE1

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13106-5E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile