TV CLAMPING DIODE Search Results

zener diode mv 5

Abstract: zener diode mv 12 zener diode zener VZ 1.2 v shottky diode shottky tv clamping diode 2902 Eupec diode 15KE diode
Contextual Info: from Europe for the World Application Note European PowerSemiconductor and Electronics Company Clamping of VGE 1 Suppressor zener diode clamping: Vzge has to be choosen, so that following equations are fulfilled: Vzge = Vz ∗ 1 + α T ∗ ∆ϑ j )∗ (1 + TV ) ≤ VGE , peak

BA173

Abstract: DIODE BA173 74915 TFK 450 tfk 843 diode s .* tfk TFK diode
Contextual Info: BA 173 'V Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Klemmschaltungen In Farb-FS-Geräten mit hohen Betriebsspannungen Applications: Clamping circuits in colour TV-receivers, with high supply voltage Abmessungen in mm Dimensions In mm KATH OD E

BA159S

Abstract: BA157S BA158S
Contextual Info: BA157S. BA159S Fast General Purpose Silicon Rectifiers Milli meters for high speed switching applications, e.g. as clamping diode in colour TV receivers The rectifiers in plastic case DO-41 are designated by suffix S. at Cathode Mark Dim. Min. Max. A 4.07

ITT BA159

Abstract: diode ITT 157 ba ba159 ITT BA157 ba159 diode BA157 BA157 200 BA158 DIODE BA159 BA159 switching diode
Contextual Info: ITT SEMICON»/ INTERMETALL 50E D 4bA2711 OODBMSS S74 M I S I 13 BA157 . BA159 Fast General Purpose Silicon Rectifiers for high speed switching applications, e. g. as clamping diode in colour TV receivers J * - max 3.2 islI f I Cathode Mark ^0.8 i> Plastic case

CA3143E

Abstract: CA3143 3126Q
Contextual Info: Linear Integrated Circuits CA3143E TV Luminance Processor Features: • Black-level clamping ■ Linear dc controls for brightness, contrast, and peaking . ■ Horizontal and vertical blanking ■ Operates with standard or tapped delay line 14-Lead D u al-in-L ine

Contextual Info: Preliminary Data Low Voltage TVS Diode Array ¡ [ M ï n n i [ H ] SLVDA2.8 SLVDA3.3 TEL805-498-2111 FAX:805-498-3804 PRELIMINARY DESCRIPTION FEATURES: The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and

1048 diode

Abstract: DIODE 929 1049 bat 54 9572 PIN diode For CATV agc 1124 1072 sot HSMS High frequency detector diode 9565
Contextual Info: Surface Mount Schottky and PIN Diodes Market Positioning Guide Surface Mount Diode Positioning Schottky Diodes Applications Clamping/Clipping Part Numbers *HBAT-540a Markets *HSMS-270a Application Notes Computer Replacement for industry standard BAT-54 1069

thyristor BT 161

Abstract: ICT-10C ICT-12C ICT-15C ICT-18C ICT-22 ICT-36 ICT-36C ICT-45 BT TVS
Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s I CT" 5 r/es CT-45C OYOQM Control over power h m sib ia Protection FEATURES When no problems exist, Oydorn TVS • Qass passivated junction Diodes are totally invisible to the circuits • Stand-off voltage range: 5-45 V

Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s I CTE» 5 r/es CTE-45C OYOQM Control over power h m sib ia Protection FEATURES When no problems exist, Oydorn TVS • Qass passivated junction Diodes are totally invisible to the circuits • Stand-off voltage range: 5-45 V

Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s P T E / 1 N 6 3 7 3 ~~ 1N63^ O Y O Q M Control over power 01.O16±O.O5O im s ib ie Prolection FEATURES When no problems exist, Oydom TVS • Qass passivated junction Diodes are totally invisible to the circuits

thyristor t 558 f

Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s + 1 N6 Q3 6 - 1N6072A + Series C3Y30M Control overpower h m sib ia Protection MAXIMUM RATINGS When no problems exist, Oydom TVS • Peak pulse power (Ppk): Diodes are totally invisible to the circuits

Z10A

Abstract: n6373 N6380 1N6389 1N6374
Contextual Info: T ra n s ie n t V oltag e S u p p re s s io n TV S D io d e s ¡/1 N 6 3 7 3 ~~ 1 N 6 3 8 9 O Y O O M Control overpower 01.O16±O.O5Q fim s ib fe P rotection FEATURES When no problems exist, Oydom TVS • Qass passivated junction Diodes are totally invisible to the circuits

TVS 36C

Abstract: ICR22 ICR12 ICR18 ict-5 diode ICT-10 ICT-15C ICT-18C ICT-22C ICT-36
Contextual Info: T ra n s ie n t V oltag e S u p p re s s io n TV S D io d e s ,1 C T -5 C T-45C O Y O O M Control overpower FEATURES fim s ib fe P rotection 31.8 min. 5.33 max. : 7.5 9.Q lr T 25.4 mir». When no problems exist, Oyctoiri TVS Q a s s passivated junction Diodes are totally invisible to the circuits

MFT-45

Abstract: 1N6356 1N6357 1N6358 1N6359 1N6360 MPT-10 MPT-12 MPT-15 BIDIRECTIONAL TVS 1 watt
Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s + MPT/1NS356 + Series 1 M0 3 7 2 OYOQM Control over power hmsibia Protection FEATURES When no problems exist, Oydorn TVS • Qass passivated junction Diodes are totally invisible to the circuits

ICTE

Abstract: MARKING CFf marking p1j
Contextual Info: T ra n s ie n t V oltag e S u p p re s s io n TV S D io d e s 5 - ICTE- O Y O O M Control overpower 0 1 .D 1 6 + O .O S I fim s ib fe P rotection FEATURES When no problems exist, Oyctoiri TVS • Q a s s passivated junction Diodes are totally invisible to the circuits

Contextual Info: GEC P L ES S E Y SEMICONDUCTORS W DS4143-3.4 DF451 FAST RECOVERY DIODE APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding. ■ High Frequency Rectification. ■ UPS. KEY PARAMETERS v RUM 1600V 295A Jf<AV 3500A

BI-DIRECTIONAL TVS 3 watt

Abstract: lt 715 s170 D015 SA10 SA10A SA11 SA11A SA12 SA12A
Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s S A5 . Û r/es C3Y30M Control overpower 0.76 Smtslblei Prolection MAXIMUM RATINGS When no problems exist, Oydorn TVS • Peak pulse power (Ppk): Diodes are totally invisible to the circuits they‘re protecting. But when potentially

Contextual Info: USBP01-5M8 ESD protection for enhanced micro USB interface Datasheet − production data Features • D+/D- and ID lines protection with 7 V low voltage diodes LV ■ VBUS line protection with 32 V high voltage diodes (HV) ■ Ultra low capacitance 0.2 pF on low voltage

Contextual Info: USBP01-5M8 ESD protection for enhanced micro USB interface Datasheet − production data Features • D+/D- and ID lines protection with 7 V low voltage diodes LV ■ VBUS line protection with 32 V high voltage diodes (HV) ■ Ultra low capacitance 0.2 pF on low voltage

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 269 N 036 03,ä°'1 X 3,5 t ie f / d e p th b e id s e itig / o n b o th s id e s \I\M \S Il l i . / H o n e M axim um rated values Periodische Spitzensperrspannung

Contextual Info: SiG E C P L E S S E Y SF Ml C O N D U C T O R S DS4146-4.3 DSF8025SE FAST RECOVERY DIODE APPLICATIONS • KEY PARAMETERS V RRM 2500V 650A Jf AV 7500A ' fsm 540|iC Induction Heating. ■ A.C. Motor Drives. ■ Q. Inverters And Choppers. ■ Welding. 5.0|XS

DS412

Abstract: DS502 DS912 M303 34004 C 4385
Contextual Info: MARCONI CKT T E C H N O L O G Y 30E D • S7S3445 0001751 T ■ 'pCI-ÌÌ CONVERTER & AVALANCHE DIODES Series Type Stud Cathode Silicon Diameter Voltage Slud Anode Repetitive Peak Reverse Reverse Available Nonrepetttive Peak Reverse Voltage Peak Reverse Current

Contextual Info: PI ln p r IbbB T WÊÊÊB European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 849 N 03,5 +0,1 x 3,5 tief / depth beidseitig / on both sides V W K July 1996 H ö ch stzu lässig e W erte M axim um rated values

5KR34

Abstract: 5KR33 5KR5 5KF22CA 5KF54 5KR28CA 5kf51a 5KF30CA 5KF33 5KF20a
Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s + 5KP5.0 - 5KP180C + Series C 3Y D O M Control overpower 1.2 -1.3 im s ib ie Prolection MAXIMUM RATINGS When no problems exist, Oydorn TVS • Peak pulse power (Ppk): 5000 watts Diodes are totally invisible to the circuits