TT 80 N 1200 Search Results

tt 250

Abstract: stt250 TT250 tt250n
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 250 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 250 N, TD 250 N, DT 250 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 265 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 265 N, TD 265 N, DT 265 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties

170n10

Abstract: tt 95 n 12
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 170 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 170 N, TD 170 N, DT 170 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 210 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 210 N, TD 210 N, DT 210 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties

STT251

Abstract: TT251N TT 251 N 14
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 251 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 251 N, TD 251 N, DT 251 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 215 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 215 N, TD 215 N, DT 215 N Elektrische Eigenschaften Höchstzulässige Werte Periodische Vorwärts- und

itav 50

Abstract: 106n6
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 106 N screwing depth max. 8,5 for M5 plug A 2,8 x 0,8 12 15 20 20 19 80 92 AK K A K1 G1 K2 G2 March 1998 TT 106 N, TD 106 N, DT 106 N Elektrische Eigenschaften Höchstzulässige Werte

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 285 N 28,5 35 5 6 115 80 9 18 AK M8 92 18 K A K1 G1 K2 G2 VWK Okt. 1996 TT 285 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values Periodische Vorwärts- und

STT150

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 150 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 150 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values

tt 104 n 12

Abstract: TT104N TT 104
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 104 N screwing depth max. 8,5 plug A 2,8 x 0,8 for M5 68 4 2 3 1 15,5 20 20 14,5 80 92 AK K A 3 1 4 2 VWK February 1996 TT 104 N, TD 104 N, DT 104 N Elektrische Eigenschaften

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 70 N for fillister head screw screwing depth max. 8,5 M5x11 Z4-1 plug A 2,8 x 0,8 12 15 20 20 19 80 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 70 N Elektrische Eigenschaften Höchstzulässige Werte

P1000

Abstract: tt 162 n 1200 tt162n CR5200 tt 162 n 16
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 162 N screwing depth for fillister head screw max. 11 M6x15 Z4-1 plug A 2,8 x 0,8 13 K2 G2 K1 17 23 23 15 G1 5 80 94 AK K A K1 G1 K2 G2 VWK February 1996 TT 162 N, TD 162 N, DT 162 N

TD131N

Abstract: 131n8
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 131 N for fillister head screw M6x15 Z4-1 screwing depth max. 12 plug A 2,8 x 0,8 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK February 1996 TT 131 N, TD 131 N, DT 131 N

tt 142 n 12

Abstract: M6x15
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 142 N screwing depth for fillister head screw max. 11 M6x15 Z4-1 plug A 2,8 x 0,8 13 K2 G2 K1 17 23 23 15 G1 5 80 94 AK K A K1 G1 K2 G2 VWK February 1996 TT 142 N, TD 142 N, DT 142 N

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 121 N screwing depth max. 12 for fillister head screw M6x15 Z4-1 plug A 2,8 x 0,8 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK February 1996 TT 121 N, TD 121 N, DT 121 N

TT 95 N 12

Abstract: TT95N 95n12 itav 50
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 92 N screwing depth max. 9,0 plug A 2,8 x 0,8 for fillister head screw M5x11 Z4-1 10 4 2 3 1 15,5 20 20 14,5 80 92 AK K A 3 1 4 2 VWK February 1996 TT 92 N Elektrische Eigenschaften

tt 95 n 12

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 122 N screwing depth for fillister head screw max. 11 M6x15 Z4-1 plug A 2,8 x 0,8 13 K2 G2 K1 17 23 23 15 G1 5 80 94 AK K A K1 G1 K2 G2 VWK February 1996 TT 122 N Elektrische Eigenschaften

thyristor tt 61 N 1200

Abstract: KM11 KM14 KM17 KM33 thyristor tt 92 n 1200
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 61 N screwing depth max. 9,0 plug A 2,8 x 0,8 M5 10 4 2 3 1 15,5 20 20 14,5 80 92 12 AK K 5 4 2 6 1 2 AKK 3 A 1 2 AKK TT 1 4 2 3 A 3 1 TD 1) 3 A DT 1) 9. Sept. 1998 Technische Information / Technical Information

MTP15N06E

Abstract: MTP12N10 XS630B1PAM12 MTP20N10 MTP15N06L MTP20N08 MTP20P06 MTP12N05 MTP12N05E MTP12N06
Contextual Info: - f §y £ fr tt € ? Wl ± £ Vd s or Vg s fê Ta=25‘ C Ig s s Pd Id * /CH Vd g W. Vd s (V) (V) (V) (W) (A) (nA) (V) ( M A) MTP12NQ5 MOT N 50 ± 2 0 12 75 MTP12N05E MOT N 50 12 40 MTP12N06 MOT N 60 ± 2 0 12 75 MTP12N08 MOT N 80 ± 2 0 12 75 M T P 12N08L

2SB737

Abstract: 2SD786 EL 14v 4c 2SD758B 2SB733 2SD756 2SD758 2SD772 2SD786S 2sd797
Contextual Info: - 224 - Ta=25'C, *EP(iTc=25‘ C m £ tt & m ä VCBO Vc e o (V) (V) n lc(DC) Pc Pc* Ic b o (A) <W) (W) (Uh) Vro (V) n & 14 hF E (min) (roax) (Ta=25‘ C) Ir/Ir (Aj“ Vp f (V) [*E P (ity p fif] (max) '(V )' Ic CA) Ib (A) 2SD743 H i LF PA/LS PSW 100 80 4

285-25

Abstract: DD40F-160 DD40F-120 DD40F-140 DD40F-20 DD40F-40 DD40F-60 DD50GB40L DD50GB40M DD50GB60L
Contextual Info: - 122- 4t m % Pr s m Vr s m fé * V M Vr V] m is isa m & * & n lo Vpm ax I fsm I Rtnax m •e o m m tt ^ m ÍV V) rc> (A ) I f (A) t (/a A ) V r (V ) D D 4 0 F — 1 20 DD40F-140 DD40F-160 DD40F-20 DD40F-40 130 0 150 0 1700 240 4 80 1200 1400 1600

Contextual Info: =1001381 * 0002213 3Û0 SYNERGY 8- b it s h i f t r e g i s t e r sy-ioos34i S E M IC O N D U C T O R FEATURES • ■ Max. shift frequency of 600MHz ■ Max. Clock to Q delay of 1200ps ■ Iee min. o f-150m A ■ ESD protection of 2000V ■ Industry standard 100K ECL levels

BSM25GB120D

Abstract: C160 SC10 siemens igbt BSM 150 Gb 160 d SIEMENS ks
Contextual Info: LOE D • 0235bG5 QOMSÛ1L 2 2 ? « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF '7 ^ 3 3 - 0 7 BSM 25 GB 120 D BSM 25 G AL 120 D IGBT Module Preliminary Data VCE = 1200 V = 2 x 35 A at r c = 2 5 C = 2 x 2 5 A at r o = 8 0 'C Ic Ic • Power module • 3-phase full bridge

siemens ha 8000

Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
Contextual Info: bGE D • ôS3SbDS 0QM5ÔMÛ Ö37 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T ’ Z d r C IGBT Module Preliminary Data ft BSM50GB120D BSM50GAL120D = V CE 1200 V / c = 2 x 70 A at T c = 25 C / c = 2 x 50 A at 80 C Tc = • • • • • Power module H alf-bridge/Chopper