TT 66 N Search Results

EUPEC TT 66

Abstract: EUPEC tt 66 N 16 EUPEC TT 66 n 12 TT66N powerblock TT 66 N 16
Contextual Info: EUPEC blE V m 3 4 0 3 ^ 7 OODlObb 3QT H U P E C TT 66 N, TD 66 N, D T 6 6 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

TTL / RS 422

Abstract: 422 ic 7500 IC 14 PIN pin diagram of max 485 WITH 9 PIN CONNECTOR RS-422A RS-423 RS-449 SP503 FPQ Package
Contextual Info: SP503 61 SD a 62 VCC 63 TT(a) 64 GND 65 TT(b) 66 CS(a) 67 CS(b) 68 DM(a) 69 DM(b) 70 RD(a) 71 RD(b) 72 GND 74 VCC 73 VCC 75 GND 76 SCT(a) 77 SCT(b) 78 DSR 80 CTS • Single Chip Programmable Serial Transceiver ■ Seven (7) Drivers and Seven (7) Receivers

Contextual Info: SP503 61 SD a 62 VCC 63 TT(a) 64 GND 65 TT(b) 66 CS(a) 67 CS(b) 68 DM(a) 69 DM(b) 70 RD(a) 71 RD(b) 72 GND 73 VCC 74 VCC 75 GND 76 SCT(a) 77 SCT(b) 78 DSR 80 CTS • Single Chip Programmable Serial Transceiver ■ Seven (7) Drivers and Seven (7) Receivers

Kathrein gsm ANTENNA

Abstract: Kathrein Antennas datasheet sharp Universal lnb Ericsson microwave dish Kathrein Antennas Ericsson microwave antenna 0.3 to 0.6 difference Ericsson microwave antenna 0.6 ku-band lnb Ericsson Base Station DC 1800 Kathrein
Contextual Info: 11 99 99 66 RF MICROWAVE SOLUTIONS FOR THE WORLD OF DIGITAL COMMUNICATIONS AA NN NN UU AA LL RR EE PP OO RR TT ANADIGICS, Inc. is a leading provider of creative, high quality gallium arsenide “GaAs” integrated circuits which support the global communications infrastructure. ANADIGICS’

Contextual Info: SP505 62 VCC 61 SD a 63 TT(a) 64 GND 65 TT(b) 66 CS(a) 67 CS(b) 68 DM(a) 69 DM(b) 70 RD(a) 71 RD(b) 72 GND 74 VCC 73 VCC 75 GND 76 SCT(a) 77 SCT(b) 78 DSR 80 CTS • +5V Only Operation ■ Seven (7) Drivers and Seven (7) Receivers ■ Driver and Receiver Tri-state Control

DHO 165 DV 414

Abstract: ID500A-030 TA8250 TAE 1102 USM6J44 H-17 H-18 H-19 USM6G44
Contextual Info: - 157 — Z * TT- 1 4 1 3 - 7 E 2 A U S M 6 r G, J j 4 4 C ^ ') n 0 % £ i¡t > • 7 'U — -j-fiï 6A ( Tn = 25°C Ì I drm Id TT USM 6J44 USM 6G44 V d sm Vdrm /T i RMS) I tsm I 2-I P gm Pc,( a v > VCM ÍCM 400 6 i r r =68°C ) 60/66 (50H z/60H z, 1

Contextual Info: 'MODULAR CONNECTORS' Dip Type Straight Dip Type CL 222 TM TM3R-6- * HRS No. CL222-0114-3-10 CL222-0071*2-10 Part No. TM3R-66 10 TM3R-64(10) 22 14.9 19 8.9 3.5 I TT > > A m •6- PCB mounting hole layout (Connector mounting side) I 1.5 2.5 12.4 1.5 1.5 0.5

78 mo 5

Contextual Info: G T A B LE t Ä tt* « m ra t ttS T S E A L S PART NO. PA R T NAME MATERIAL & FINISH 'S HEADER HOUSING 66- f j n ifc UL94V-0 66 NYLON GLASS FILLED CT1 : UL LEVEL2, 250~399V 7fÑ°Xh PO ST CO N TACT E: 1. «S*H8:1 0 8 - 5 4 5 9 2. mmmm» : 1. 6 t 3. y ^ a i s o v y ? •. 9 1 7 6 8 7

5082-2794

Contextual Info: • 4M475S4 0D01b3b . H E WL E TT - P A C K A R D / WHn% HEWLETT ^3^ BH PA rmnutr L1r CMPNTS l ML'nM PA C K A R D b it. Schottky Barrier Diodes for Stripline, Microstrip Mixers and Detectors 5082-2200/01/02/03 5082-2207/08/09/10 5082-2765/66 5082-2774/75

CR20EY

Abstract: CM16VE CM16VG CM16VJ CN16VC CN16VE CN16VG CN16VJ EGN24-06 EGN24-08
Contextual Info: - 66 - s 35 £ tt « vrsh V CM 16 VE CM16VG CM16VJ CN16VC C N 16VE CN16VG CN16VJ EGN24-06 EGN24-08 EGN26-08 EGP26-13A EGP26-13B CRlOCY-iO CR IO C Y — 12 CR10CY-2 CR10CY-4 C RIOCY— 6 C RIOCY— 8 C R20EY— 10 C R20EY— 12 CR20EY-14 C R20EY— 16 CR20EY-2

MB81C71-55

Abstract: LH5161-25 MCM6287-35 mcm6287 KHB165L-35 KM6165-45 KM6165L-25 KME165-35 M5M5187AP-25 MB81C71
Contextual Info: - 66 - 4 K X m £ ît * CC TAAC max ns) TCAC (ns) TOE max (ns) CMOS y A f- > TOH rain (ns) TOD max (ns) S t a t i c ;/ TWP min (ns) RAM ( 6 5 5 3 6 x 1 ) tt n < TDS min (ns) TDH (ns) TWD nin (ns) TWF max (ns) V D D or V C C (V) 22PIN 1DD max <mA) 6287 À

J1247

Contextual Info: 0 .6 ±0 A 2- «* S 56 -?-f o a JIM A M W 3. CU.94 V-OJ t 100—5297 * 114-5140 MOTES, A o tt MATERIAL • 66 NYLON OJLS4V-OJ 2. PRODUCT SPEC. . 100-5297 3. APPLICATION SPEC. * 114-5140 I- UJ Z. E z r 7—175778-5 5-175770-5 3-175770-5 7- I -4 5- J\ -4 3- I

XPS-AC

Abstract: H-17 H-18 SM6GZ47 SM6GZ47A SM6JZ47 SM6JZ47A 2-80D2A 1C33A
Contextual Info: 142 — 2 * •fl-M## TT-7 13-1OH1A SM6rG, JjZ47 C 6 A T n = 25°C) 10V//ÌS OifÊStfllit ( A C 1 5 0 0 V , {-%^9'i-f) ¡Hi) I M ) ■ « * £ * & i£ SM6GZ47 Vd = Vd r m Vtm It m = SM6JZ47 I n RMS) 6 I t s .» 60/66 P J f f * * - KI I 2 ‘t 18 PGM 5 III

Contextual Info: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428

2S897

Abstract: 2SA1178 2SA1225 2SA1371 2SA1243 2SA1628 2SA1586 2SA879 2SA1770 2SA1283
Contextual Info: 66 - m % tt T y p e No. 2 SB 1216 ^ ^ 2SB 1218 ^ 2SB 1218A a * 85 T fö T tö T 2SB 1219A fö 2SB 1220 ta 2SB 1219 V- 2SB 1222 2S8 1223 f 2SB 1224 2SB 1225 J 2SB 1226 ^ ±L 2SA1622 2SA1586 m ± m FU JITSU iß T MATSUS H I T A 2SB1218A 2 S A1576 2 S A 16 0 3

i02C

Contextual Info: cs o n C e.5 0 .9 o ► - tr I— Lü * 1 table A h iv —K 1 7 .6 ) 11.2 TRADE MARK ., 1 £ M ff MANUFACTURING h l a c e (3 -2 ) C 9 .9 ) •AMP Stt OR “ AWP S tt or — +■ ■+ AMP _ B * JAPAN )ï A 2. 3. 4. W P ; 66^-rn y ( U L 9 4 V - 0 )

2SB927

Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
Contextual Info: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O

KB-362

Abstract: M8513 KB-265 KB-365 KB-369 M8513A-O HV23G MA27-C MA26W MA27-B
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 (V) (A) (V) If . IFM* (mA) V F (V) mi n typ 0. 07 0.07 1. 5 1 1 2. 3. 0. 0. 0. 60 58 58 58 1 1 3 2. 0. 0. 0. 0. 64 59 69 62 66 2. 0. 0. 0. 0. 88 65 75 69 72 30 30 30 30 30 1. 1. 1. 1. 1. 18 18 18 24

30g 123

Abstract: M8513A-0 KB-262C4 1S1212 1S1300 1S464 1S467 607D DS430 HSK23
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 (V) (A) (V) If . IFM* (mA) V F (V) mi n typ 0. 07 0.07 1. 5 1 1 2. 3. 0. 0. 0. 60 58 58 58 1 1 3 2. 0. 0. 0. 0. 64 59 69 62 66 2. 0. 0. 0. 0. 88 65 75 69 72 30 30 30 30 30 1. 1. 1. 1. 1. 18 18 18 24

KB-362

Abstract: 1S1300 1S1212 M8513A-0 MA27B KB-362M HV23G DS430 KB-162 KB-262C4
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 (V) (A) (V) If . IFM* (mA) V F (V) mi n typ 0. 07 0.07 1. 5 1 1 2. 3. 0. 0. 0. 60 58 58 58 1 1 3 2. 0. 0. 0. 0. 64 59 69 62 66 2. 0. 0. 0. 0. 88 65 75 69 72 30 30 30 30 30 1. 1. 1. 1. 1. 18 18 18 24

KB-362

Abstract: HV23G 1S467 KB-265 MA26W M8513A-0 KB-365 1S464 m8513a-r 1S1300
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 (V) (A) (V) If . IFM* (mA) V F (V) mi n typ 0. 07 0.07 1. 5 1 1 2. 3. 0. 0. 0. 60 58 58 58 1 1 3 2. 0. 0. 0. 0. 64 59 69 62 66 2. 0. 0. 0. 0. 88 65 75 69 72 30 30 30 30 30 1. 1. 1. 1. 1. 18 18 18 24

KB-262C4

Abstract: 1S1212 KB-362 1S1300 KB-262 HV23G KB-265 M8513A-0 MA27-B HV123G
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 (V) (A) (V) If . IFM* (mA) V F (V) mi n typ 0. 07 0.07 1. 5 1 1 2. 3. 0. 0. 0. 60 58 58 58 1 1 3 2. 0. 0. 0. 0. 64 59 69 62 66 2. 0. 0. 0. 0. 88 65 75 69 72 30 30 30 30 30 1. 1. 1. 1. 1. 18 18 18 24

Contextual Info: 10 a ts c o is 0 ^ -9-9- 66 - <|? § - _ < -9-9- sfc 9 9 Ln:j O O c\r 6 6 — I0 .2 MAX. 2 .5 4 MB 0 .6 w X & O CO 1. O X J\~ : I5X A D PBTP U L 9 4 V - 0 , M tT V = M M . V X X D 0 .6 3 5 : 5320 v ' J - A 2. 3. 5 34 2 - N • A’- A A A / I - T "

2N3440 2N5416 REPLACEMENT

Abstract: 2N5954 2N5781 2N6107 2N6248 2N6292 2N6372 2N6472 2N6488 2N6491
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 2 0 0 W . . . V C E to 1 2 5 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. P y * 40 W max. TO-66 * lc * - 6 A max. P y - 40 W max. 1TO-66)* le « 7 A max. Py - 40 W max. V E R S A W ATT