TT 25 N 12 Search Results

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 310 N M10 screwing depth max. 18,0 plug A 2,8 x 0,8 4K 5G 31 50 7K 6G 44 3 1 2 25 112 6 144 100 25 124 K AK A G K G K VWK February 1996 TT 310 N, TD 310 N, DT 310 N

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 425 N M10 screwing depth max. 18,0 plug A 2,8 x 0,8 4K 5G 31 50 7K 6G 44 3 1 2 25 25 100 112 124 6 144 K AK A G K G K VWK February 1996 TT 425 N, TD 425 N, DT 425 N

TD131N

Abstract: 131n8
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 131 N for fillister head screw M6x15 Z4-1 screwing depth max. 12 plug A 2,8 x 0,8 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK February 1996 TT 131 N, TD 131 N, DT 131 N

tt 95 n 12

Abstract: TT430 TT 56 N 1200
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 430 N M10 screwing depth max. 18,0 plug A 2,8 x 0,8 4K 5G 31 50 7K 6G 44 3 1 2 25 25 100 112 124 6 144 K AK A G K G K VWK February 1996 TT 430 N,TD 430 N, DT 430 N Elektrische Eigenschaften

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 121 N screwing depth max. 12 for fillister head screw M6x15 Z4-1 plug A 2,8 x 0,8 14 15 25 25 K2 G2 K1 G1 13,3 5 80 94 AK K A K1 G1 K2 G2 VWK February 1996 TT 121 N, TD 121 N, DT 121 N

tt 500 n 14

Abstract: 1tt500 ctt500
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 500 N M10 screwing depth max. 18,0 plug A 2,8 x 0,8 4K 5G 31 50 7K 6G 44 3 1 2 25 112 6 144 100 25 124 K AK A G K G K VWK February 1996 TT 500 N Elektrische Eigenschaften

Diplexer

Contextual Info: Delta Datasheet T Te ec ch hn n ii c ca a ll D Da a tt a a o on n D De e ll tt a a M M ii c c rr o ow wa av ve e P P rr o od du uc c tt s s PCS Diplexer/Amplifier Model L5964 A, B, C Bands +12, +25, +35, +45 Gain Packages Features: Compact Size Rack mount ready 1U high

DT25N

Abstract: tt 25 n powerblock
Contextual Info: blE D EUPEC BMGBSI? OGÜiaHb S U «IIPEC TT 25 N, TD 25 N, DT 25 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte M axim um rated values Periodische Vorw ärts- und R ückw ärts-Spitzensperrspannung repetitive peak forward off-state

op37

Abstract: 0p37 ne1037 OP-37 4V18V 0PA37 LT 5147 HA-5137 LT1037 OP-37E
Contextual Info: - 54 O P -3 7 m s , f & t 7 * " / m e , i m m , m m • tt » •A*»if«E:3nV//Hz U - h : 17V//Z s A N A LO G OP-37F W ft tt OP-37G Vs-± 15V m ist m j± ±22 ±22 ±22 Ta=25’C A # EE ±22 ± 22 ±22 ±0.7 ±0.7 ± 0.7 J/Z:-25- -40— +85 J/ Z : -25— +85, P:0— +70

SM12GZ46

Abstract: SM12DZ46 SM12DZ46A SM12GZ46A SM12JZ46 SM12JZ46A 72-CI
Contextual Info: — SM 12 r D, G, J . Z 4 6 - K * ÍSSH O íám ft iVi, ¿* ^ M 1“J ' - *Í" L *Cfe ¡ÍFL^m» 0 TO-220 • f lïB IS # # TT-5 13- I O F 1A M ftW W tt ! Tú = 25°C ! 12A ~n T fftf* "Su_L‘.-Pr^+■li! (1500V. ACi -y iHd Id r m Vt m .Id ?• SM12DZ46

TN0624N2

Abstract: TN0620ND TN0624N3 TN0624N5 TN0624ND TP0102N2 TP0102N3 TP0102ND TP0104N2 TP0204N3
Contextual Info: - f JR * £ ÍS Ta=25°C t Vd s Vgs s « tt « i Vd g * (V) SUPERTEX SUPERTEX N TN0624N3 TN0624N5 TN0624ND SUPERTEX SUPERTEX SUPERTEX N TN1110ND TP0102N2 TP0102N3 SUPERTEX SUPERTEX SUPERTEX N TP01D2ND TP0104N2 TPÛ104N3 TP0104ND TPÛ202N2 TP0202N3 TP02Ü2ND

uPD27256D-3

Abstract: uPD27256D UPD27256D-2
Contextual Info: - 100- * ü uPD27256D £ tt & äUÖEBl rc A TAAC max ns) TCAC max (ns) y + y 7 TOH max (ns) # TOE max (ns) NEC -25—85 250 250 UPD27256D-2 NEC -25—85 200 200 75 uPD27256D-3 NEC -25—85 300 300 120 m tì TOD max (ns) 100 VDD (V) n In A I DD/STAND8Y (diA)

Contextual Info: I rl.- 7-r-tt I ll llL P/N WCN5050PX104KC102 L .500max w .500max ELECTRICAL: l KHa 25"C CAPACITANCE DISSIPATION FACTOR TEMPERATURE COEFFICIENT OPERATIONTEMP. RANGE (2s"c) IR (12s"C) D.C. WORKINGVOLTAGE DWV: SOLDERTYPE: [!!! SPECIAL PR(rcESSING IN PR(rcESS INSPECTION:

2052B

Abstract: 2SK1923 24n700
Contextual Info: Ordering num ber: E N 4 3 1 2 * 2SK1923 No.4312 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu re s •Low ON resistance. • Very high-speed switching. • High-speed diode trr = 120ns . b so lu te M aximum R atings a tT a = 25°C

R161.321

Abstract: R161.336 R161 022 R161 337 200 R161332000 Radiall R161
Contextual Info: N 50 Q JACKS 25.4 mm SQUARE FLANGE, STRAIGHT JACKS, FOR SEMI RIGID CABLES 25.4 mm = 1 inch 4 h ol es 03.3 u 1 1n/ i i , a. t,s nr » I CX. ii ii /I ff iia-,tts 14/ 2f l a i s 12/ 2fl at G «0'” 1 l ' cL TT £ , □ IB .25 Fig. 1 & 2 16. 7 Fig. 1 n 25. 4

Contextual Info: 2SK2312 TOSHIBA SILICON N CHANNEL MOS TYPE L2- tt-M OSV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 3.2 ± 0 .2 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

SC-62

Abstract: 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1668 2SD1669
Contextual Info: - 260 - Ta=25<C , *EPfàTc=25‘ C m 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 s tt j s s fô T O—A n —A D —A 3$ rn « Œ VCBO «CEO (V) (V) PSW 100 PSW 1500 100 Pc Pc* (A) (W) (W) »CBO unax; UA) 100 15 5 n m « ÌC(DC) , V'CB (V)

34181

Abstract: MC34181 MC33181 MC35181 amp mx he nw
Contextual Info: - 206 - MC33181, 34181, 35181 •H iB H itffE : 210 ß A/amp • S S « Œ I S H : ± 1 . 5 ~ ± 18V :0~500pF n -W -, » Jivífíá JFETA* •m a « # tt Vs=±15V Ta=25"C • X ;l/— U — H :1 0 V /# s a -fe * y H « A*i7t*rtUE Vo55ia*PCT vo«sssæ tt

KGF1860

Abstract: M47F KGF1870 dual fet m47f M46F ME2N20 Pch MOS FET T0-252 MD05N10 MD06N20
Contextual Info: - 144 - Jft f S tt S € ffl AS ü Ì& ^ fë % t . * h' « r- % 1 V * * * (V) * * (A) P d /P c h (W) Ig s s (max) (A) Vg s (V) (min) (A) & 4# m (max) Vd s (A) (V) tt (Ta=25*C) (min) (max) Vos (V) (V) (V) Id (A) (min) (S) Vd s (V) Id (A) X ^ K - B a n d LN A

Contextual Info: more than you expect IVidcom .5 0 0 MAX. [1 2 .7 0 ] TERM. NO. s FOR REF. ONLY PARAM ETER □m 7 XE cn 8 XE cn 9 T -' m X l~TT 10 T"m 3 .5 3 0 MAX. [1 3 .4 -6 ] X 2 TT~I TE ST C O N D IT IO N S VA LU E HE e h I I I W U R TH E L E K T R O N IK ELECTRICAL SPECIFICATIONS 25°C u n le ss oth erw ise n oted:

30X30

Abstract: DTM12-N S 80 W
Contextual Info: Ordering number : EN1880B DTM12-N Silicon Planar Type 12A Bidirectional Thyristor F e atu re s •Insulation type •Peak OFF-state voltage : 200 to 600V •R M S ON-state current : 12A ■TO-220 package DTM 12C-N 200 A bso lu te M ax im u m R atin g s a tT a = 25°C

TLG306

Abstract: TLG312A TLG352 TLG353 bl 565 tlg313 TLG420S LM 7801 NAG105P NAG107P
Contextual Info: -74- X'T-tàZ •f -s-r •O -f ■ . nm n n m n A.P Inm If M inm ) vmAi • ; n = 25°C! VF ¡V) IF Ir i.raA' vpAI Vh !Vi 25*C) Æ S .s Î iz «sût i l If im cd) imA'i il tt iS ■ •it ^ £ V. it Dp % 9W íil 3 í> .r;- p u í > • t¡ V— K ím A i

DL-7666Y

Abstract: DL7666Y NSY101 HG1132G TTL LS 7407 HD1132Y HD1134Y NSY141 NSY145 NSY147
Contextual Info: -f t ± i£ m {T,<= 25’C H£ n •i t ¥ ftt w •$ \Ta= 25’C-! £ )i: tt -7 / - K n I ’¡Lift ;&Mr± £ i¥.H: tí n •*•/- K DL-7666Y DL-7666Y HD1132Y HD1134Y NSY14Î NSY141 NSY143 NSY143 >- o 7, ? * ¡, - A/’ nm! I r AA If If (nm) (mA¡ (mcd) unAf

MA344

Abstract: MA342-M MA348 MA353 MA360 MA363 MA365 MA366 MA368
Contextual Info: - 198ft m s tt * S C t VX / C t ( V 2) m ^ rm m fe fdm ax m u p £ Vr m Vr (V) (V) Ct, C j * (pF) n IR n a x Qm i n áfe# m (mW) m in ty p max Vr ( V ) m in ty p max V l(V ) V2 ( V ) (0 ) Vr (V) f(M H z) 6 10 1. 2 * 470 3 17 25 25 0. 75 * 470 50 0. 1 12