TT 22 6 Search Results

S677

Contextual Info: SKNa 22 Stud Diode Avalanche Diode SKNa 22 8NO2P:1 ?M2B@ R S7 $ N:&=1:5: %&'5+ I3/ 3(,1(5350 3.+/&,13(P D:&= 2:1( 8 ¥C77 S777 ST77 S677 SC77 SW77 ?M$8 R T6 $ N01(U VW7X >) R V7S YDP @FG& TT]¥C @FG& TT]S7 @FG& TT]ST @FG& TT]S6 @FG& TT]SC @FG& TT]SW ZM [

Contextual Info: Laser Diodes 808nm Single Fiber Output Dual-Wavelength Laser Diodes BLD-81-tt-2W-14-F-f-c-l-22 BLD-81-tt-4W-14-F-f-c-l-22 BLD-81-tt-5W-14-F-f-c-l-22 BLD-81-tt-8W-14-F-f-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

Contextual Info: PART NUMBER I .265 ± 0.015 <D 0.015 0.865 0.63 üIBI O O -GRAY CABLE REF JÜÜÜÜ H'HHRH "A" CABLE LENGTH •OVE RMOL D GRAY © RHHRH i DIM "A" TT 21 6 INCHES TT 22 12 INCHES TT 23 18 INCHES TT 24 24 INCHES TT 25 30 INCHES TT 26 3 FEET TT 27 4 FEET TT

Contextual Info: Laser Diodes 976 nm HHL Packaged Laser Diode BLD-98-tt-3W-10-F-f-c-l-22 BLD-98-tt-7W-10-F-f-c-l-22 BLD-98-tt-10W-10-F-f-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

Contextual Info: Laser Diodes 808 nm HHL Packaged Laser Diode BLD-81-tt-2W-10-F-f-c-l-22 BLD-81-tt-5W-10-F-f-c-l-22 BLD-81-tt-8W-10-F-f-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

Contextual Info: Laser Diodes 9x× nm High Power Diode Laser BLD-91-tt-10W-02-F-10-c-l-22 BLD-94-tt-10W-02-F-10-c-l-22 BLD-98-tt-10W-02-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

Contextual Info: Laser Diodes Ant Series- 9x× nm High Brightness Laser Diode BLD-91-tt-30W-A3-F-10-c-l-22 BLD-94-tt-30W-A3-F-10-c-l-22 BLD-98-tt-30W-A3-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

Contextual Info: Laser Diodes Ant Series- 9x× nm High Brightness Laser Diode BLD-91-tt-20W-A2-F-10-c-l-22 BLD-94-tt-20W-A2-F-10-c-l-22 BLD-98-tt-20W-A2-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

Contextual Info: Laser Diodes 808 nm Fiber-Coupled Laser Diode BLD-81-tt-2W-06-F-f-c-l-22 BLD-81-tt-5W-06-F-f-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

vacuum tube amplifier

Abstract: TT22 22 TT21 TT-22 tube chronotrons vacuum tube "vacuum tube" TT15 vacuum tube applications TT22
Contextual Info: File C atalo g : Electron Tube Products T T - 8 * , TT-9, TT-13 O endi/r Types 1t t - i 5 , t t - 1 7 , t t - i 8 Section: G a s and Special Tubes ( TT-20, TT-21, TT-22 CHRONOTRONS DESCRIPTION These tubes a re d esig n ed for use in electronic control circuits to p ro vid e a time d e la y in a m anner sim ilar to an

RM35LM33MW

Abstract: LM33M potenciometro ajustable RELE CONMUTADOR V1F11 potenciometro commutateur LM33MW 266HS ESTADO
Contextual Info: RM35 LM33MW Min Max C 1 mm inch 3 1 4 1 Level Tt On delay 2 Off delay 2 Tt 3 1 4 0,1 5s Un R 12 11 14 22 21 24 5 6 = 7 = 8 35/1.38 1 - Configuration: selection of the operating mode. and the sensitivity range. LS / St / HS 2 - Sensitivity control potentiometer %

ELTA

Abstract: 9544 E710
Contextual Info: Delta Datasheet T Te ec ch hn n ii c ca a ll D Da a tt a a o on n D De e ll tt a a M M ii c c rr o ow wa av ve e P P rr o od du uc c tt s s Model E7101 Features: Compact Size Waveguide Configuration High Performance Specifications: Description: Passband. 18 to 22 GHz

TT-ST-M-2-PE-24DC

Abstract: 24DC
Contextual Info: 9660163_TT-ST- 2-PE.fm Seite 1 Donnerstag, 12. Januar 2006 8:22 08 TT-ST-…-2-PE… Installations Instructions 9 9 ,5 6 3 ,5 7 6 ,2 NS 35/7,5 1 b 3 IN OUT a 2 6,2 m m 4 ungeschützt geschützt Schaltungsaufbau TT-ST-2-PE NS 35/7,5 ZB6 6,2 m m max. Ader, 6

T0220AB

Contextual Info: 10A 35VTm 150V T —h '= ¡^ y S BD Anode common F R Q S 10A 035 Fully Molded similar to TO - tt« # 0 * ^ 22 QAB —f c ïtè tt Nihon Inter Electronics Corporation Specification. i/a V H 3 — ' ^ y mm Construction Schottky Barrier Diode Application K High Frequency Rectification

GP107

Abstract: 4800 AGM C-666 st E LX C635 0603X7R ENE3910 FREE18 RS480M GP108 SP4R 0603
Contextual Info: 4 * MS-1013 Ver:OC LCD 25 A LVÙS V North Bridge RGB CRT A TT RS480M -12 \ 25 LAN Rea/tec 8101L 29 Mini PCI Socket 20 . USB 2.0x3 21 A- USB PCI V HDD South Bridge A LPC V 24 - \ Isas' X-BU5 R5C593 CARDBUS 22 CARDREADER 23 1394 21 BIOS ENE3910 A TT SB400

Contextual Info: A DEGSON Sa Mi ^ a t & ä t , 3 - * f£ ^ DEGSON ELECTRONICS CO., LTD. » m a * *£ : II M- = m tt : H # : m M2.5. ÎR. m «8*0,«gît n m % PA66, UL94V-0 300V 15A 20m fi 5000M fi /DC1000V AC2000V/1 Min 22-12AWG 2.5mm2 8£feff : ttËfeîfti ígtófelfi: ÉÊti È PI:

B65662B0000T002

Abstract: EPCOS 90 09 o B65665C00040000 N48-160 B65661 B65661D0000R026 B65661D0000R048 B65662A50020000 B65662B0000T001 B65661-W-R30
Contextual Info: PM/P/P Cores Halves/EP/TT/PR Cores Series/Type: P 22 x 13 The following products presented in this data sheet are being withdrawn. Ordering Code Substitute Product B65662B0000T002 B65661D0000R026 B65662A50020000 B65662A50000000 B65665C00040000 B65665C00050000

Contextual Info: Technische Information / Technical Information Netz-Thyristor-Modul Phase Control Thyristor Module TT 140 N 16.22 N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung

Contextual Info: 13 12 10 M A T E R IA L NUMBER tt OF COLUMNS DIM. "A" MAX. DIM. JB ‘ 76020-*04 Z 22 20 11.10 76020-*06 6 2 9 .6 0 1850 76020-*10 10 ZZ.ZO 35.3 0 ' 6 0 2 0 - / -2f : tt OF COLUMNS MODULE T Y P E — T A I L PLAT IN G TY P E GUIDE L E F T — T I N / L E A D = 2

75150

Abstract: 75152 ds75150 75154 SN75150
Contextual Info: Dual Line R S232 C Driver 75150 — JH g & tt 2500pF + 3Q tT §ë Vcc — ± 12V 15pF + 7Q tpd ft Icc + Icc" V o= H Vo=L T t L^H H—»L L—*H H—*L L^H H— L MIN 0.2 0.2 - 9 # & T Y P MAX fiS 1.4 2 /1S 2 1.5 ns 40 ns 20 ns 60 ns 45 22 mA 10 mA - 9 -2 0

Contextual Info: is02-CM0S M T35212A MITEL BELL 212A/CCITT V.22 M odem Filter 91 6 1-0 02-0 38-N A ISSUE 3 N ovem ber 1990 Features • • • • • • • • • • Pin Connections Bell 2 1 2A a n d CC!TT V .22 c o m p a tib le Usable f o r Bell 103 a n d V.22 Bis A p p lic a tio n s

Contextual Info: 13 10 3.24±.025 •098 82.2±0.64 CIRC U IT . *36 (2.50) 2.8 11 REF ■I65 ( 7 1.40) p - <I4. (4.20) □uuu □uu.u u .ujj.u u.ujj.u ■38 o.o oo .oe] oaoEJoaoEJ a a n u t 7 .22 TT^hREF 5.6 DIM 'B" S E E SH EET 2 (9.6) _ i ± t .106 (2.70) (7.9) .22 (5.4)

109 diode

Abstract: D 400 transistor RR255M-400 109 transistor SPICE model DRR255M-400
Contextual Info: SPICE PARAMETER RR255M-400 by ROHM FAE Div. * DRR255M-400 D model * Date: 2008/08/22 .MODEL DRR255M-400 D + IS=109.66E-12 + N=1.4701 + RS=45.648E-3 + IKF=6.6018 + CJO=39.663E-12 + M=.39565 + VJ=.45231 + ISR=1.7845E-9 + NR=4.5000 + BV=400 + TT=986.52E-9

DRR264M-400

Abstract: RR264M-400 5206 diode d 400 Transistor diode 5206 D-RR264M-400 rohm
Contextual Info: SPICE PARAMETER RR264M-400 by ROHM FAE Div. * DRR264M-400 D model * Date: 2008/08/22 .MODEL DRR264M-400 D + IS=599.20E-12 + N=1.6555 + RS=62.086E-3 + IKF=5.5206 + CJO=106.14E-12 + M=.43343 + VJ=.47628 + ISR=1.4138E-9 + NR=3 + BV=400 + TT=1.2332E-6