TT 22 6 Search Results

Contextual Info: Laser Diodes Ant Series- 9x× nm High Brightness Laser Diode BLD-91-tt-30W-A3-F-10-c-l-22 BLD-94-tt-30W-A3-F-10-c-l-22 BLD-98-tt-30W-A3-F-10-c-l-22 High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

Contextual Info: 12 13 10 MATERIAL NUMBER tt OF COLUNNS 75710-^005 7571Q-*006 75710-^008 75710-^010 75710-1055 75710-1056 75710-1058 75710-1050 5 6 8 10 5 6 8 10 DIN "A" MAX 18.50 22 20 29.60 57.00 18.50 22 20 29.60 37.00 DIM “B” 10.80 18.50 25.90 33.30 10.80 18.50 25.90

Contextual Info: 13 12 10 M A T E R IA L NUMBER tt OF COLUMNS DIM. "A" MAX. DIM. JB ‘ 76020-*04 Z 22 20 11.10 76020-*06 6 2 9 .6 0 1850 76020-*10 10 ZZ.ZO 35.3 0 ' 6 0 2 0 - / -2f : tt OF COLUMNS MODULE T Y P E — T A I L PLAT IN G TY P E GUIDE L E F T — T I N / L E A D = 2

Contextual Info: 13 10 3.24±.025 •098 82.2±0.64 CIRC U IT . *36 (2.50) 2.8 11 REF ■I65 ( 7 1.40) p - <I4. (4.20) □uuu □uu.u u .ujj.u u.ujj.u ■38 o.o oo .oe] oaoEJoaoEJ a a n u t 7 .22 TT^hREF 5.6 DIM 'B" S E E SH EET 2 (9.6) _ i ± t .106 (2.70) (7.9) .22 (5.4)

2SD650

Abstract: 2SC4711 MG30G1BL3 2SD670 hitachi 2SD731 2SD670 2SD837B 2SD678 2sd699 2SD683
Contextual Info: - 22 0 - tt M € Type No. « Manuf. SANYO 2SD 677 K 2 TOSHIBA m NEC HITACHI ll * ± a FUJITSU tö T MATSUSHITA MITSUBISHI □ — A ROHM 2SD2132 2SC2139 2SD 678A fö T 2SC3144 2SD635 2SD560 2SD1275A 2SD1932 2SD 679A tö T 2SD1190 2SD634 2SD560 2SD1276A 2SD1932

1N5218

Abstract: 1N5212 D2103 S3900SF D2101 1N5211 1N5213 D1201P S3901 1N5214
Contextual Info: 1TR Product Matrix G TO Product Matrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA IT R 's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550

Contextual Info: 12 13 10 M ATERIAL NUMBER tt OF COLUMNS DIM. "A" MAX. DIM. JB‘ 76020-*0Y Y 22 20 11.10 76020-*06 6 29.60 1850 76020-*10 10 YY.YO 33.30 -« OF COLUMNS OY = ' 6 0 2 0 - / -2f : MODULE TY P E — TAIL PLATING TY P E GUIDE RIGHT — TIN/LEAD = Y GUIDE RIGHT - TIN ONLY = 5

Contextual Info: F E AT U R E S MODEL NO. DS0432 2 0 0 - 90 0 MHz 2 Watts CW 0.3 dB Insertion Loss Non Reflective TTL Driver 14 Pin DIP SP2T 2 Wa tt P IN Dio d e S P2T PART IDENTIFICATION RF1 NC 1 .79 GND 2 +5V 3 “0” CONT 4 -15V 5 GND 6 RF2 (NO) 7 .20 .22 .018±.002 DIA

408-7424

Contextual Info: J. TERMINAL m PRINT PG X t f Tamp and WIRE m 3RD—K* RED / ( 0.25— 1 6) NO. A P P L I CAT I ON SP EC .NO . WEIGHT £ & #22-#16 (171506 tt) IS NO. AWG ( mm2) ? PIDG T e r m i n a l s <171 506.e t c . ) C US TO M ER GAGE NO. SIZE m m « » (THIRD ANGLE PROJECTION ,

2SJ18

Abstract: 2SJ174 HA 1350S 2S1189 2S119 2sj196 mos-mcs 2SJ170 2SJ171 2SJ172
Contextual Info: - 22 - m % ft € m & m ss f t t % * K V ± * ft Ê (V) ft * tt ft (A) P d /P c h (W) Ig s s (max) (A) Vg s (V) % M (min) (max) Vd s (A) (V) (A) ft t*È (Ta=25‘ C) (min) (max) V d s (V) (V) (V) Id (A) (min) (S) Vds (V) Id (A) 2SJ170 0 * SW-Reg, DDC MOS

1336-002

Abstract: c 1117 MU201
Contextual Info: B n N E n ^y Y -y —5 H * . &3EIÈ. * tt T 1 13-0034 m « ll5 Ä Ä K Ä 1 -3 -1 003-3813-5121 FAX 03-3813-6521 T 367-0021 lÖ E * *J ± m S Ö 2 -3 -1 M 03495-22-0851 ' í a ' í a í S t 'J U FAX 0495-24-6603 \. T 331 -0812 i S ï * é! ' * S m ^Kg/IB J3-429-1

PLL2001

Contextual Info: - 334 - S S I C • N J M 2 2 6 0 fiH * xt m tt « « 1 6 : iti f 'J Ì # , f f i S É l i , Ì S Ì 7 > y m g «A ) 5È * ft E n * /J' a * (400MHz ~ 1GHz) „ Vcc(V) 8 .0 Ta=25°C » f¥ *S 3E E *S H : IF i f l f i i k i ' Icc(mA) 22. 0 Vcc=8V rS S S »

XLH736050.000000I

Contextual Info: 13 12 10 |tl |tl [tl |tl ill . r 5l.60±0.55 46.20 24 47.40±0.55 42.00 22 43.20±0.50 37.80 20 I8 39.00±0.45 33.60 I6 34„80±0„35 29.40 I4 30.60±0.30 25.20 I2 26„40±0.30 2LOO 22.20±0.30 I6.80 IO 8 I8.00±0.30 I2.60 6 I3.80±0.25 8.40 9.60±0.25 4.20

Hitachi DSA00164

Contextual Info: HM51W4405BS Series 1,048,576-word x 4-bit Dynamic Random Access Memory ADE-203-686A Z Rev. 1.0 Nov. 29, 1996 Description The Hitachi HM51W4405BS Series is a CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM51W4405BS Series has realized higher density, higher performance and various functions by

Hitachi DSA00164

Contextual Info: HM5164805F Series HM5165805F Series 64 M EDO DRAM 8-Mword x 8-bit 8 k Refresh/4 k Refresh ADE-203-1057B (Z) Rev. 2.0 Nov. 30, 1999 Description The Hitachi HM5164805F Series, HM5165805F Series are 64M-bit dynamic RAMs organized as 8,388,608-word × 8-bit. They have realized high performance and low power by employing CMOS process

HM5165405FJ-5

Abstract: Hitachi DSA00164
Contextual Info: HM5164405F Series HM5165405F Series 64 M EDO DRAM 16-Mword x 4-bit 8 k Refresh/4 k Refresh ADE-203-1056B (Z) Rev. 2.0 Nov. 30, 1999 Description The Hitachi HM5164405F Series, HM5165405F Series are 64M-bit dynamic RAMs organized as 16,777,216-word × 4-bit. They have realized high performance and low power by employing CMOS

ADE-203-649E

Abstract: 0.18 um CMOS Datasheet of all 74 ic series HM51W16400 HM51W16400LS-6 HM51W16400LS-7 HM51W16400S-6 HM51W16400S-7 HM51W17400 HM51W17400LS-6
Contextual Info: HM51W16400 Series HM51W17400 Series 16 M FP DRAM 4-Mword x 4-bit 4 k Refresh/2 k Refresh ADE-203-649E (Z) Rev. 5.0 Nov. 1997 Description The Hitachi HM51W16400 Series, HM51W17400 Series are CMOS dynamic RAMs organized 4,194,304word × 4-bit. They employ the most advanced 0.5 µm CMOS technology for high performance and low

Ras 1210

Abstract: Hitachi DSA00164 Nippon capacitors
Contextual Info: HB56SW864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module ADE-203-776A Z Rev. 1.0 Apr. 23, 1997 Description The HB56SW864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Hitachi DSA00166

Abstract: Nippon capacitors
Contextual Info: HB56HW164EJN Series 1,048,576-word x 64-bit High Density Dynamic RAM Module ADE-203-696A Z Rev.1.0 Dec. 27, 1996 Description The HB56HW164EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: 2 A 3 5 4 X — d — b — z Kontaktanordnung c o n t a c t arra ge m en t I 5 | 9 | 13 7 11 Y | 17 | 21 15 19 | 25 23 7 160 S i g n a l K o n t a k t e 13,6-o,i 160 s i g n a l contacts h | 29 27 6 31 l = Kontak tpo sition belegt = p o s i t i o n w ith c o n ta c t

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56HW465DB-6AU 32MB Unbuffered EDO DRAM S.O.DIMM 4-Mword x 64-bit, 1 Bank Module 4 pcs of 4M × 16 components ADE-203-841A (Z) Rev. 1.0 Oct. 15, 1997 Description The HB56HW465DB-AU is a 4 M × 64 Dynamic RAM Small Outline Dual In-line Memory Module (S. O.

Hitachi DSA00164

Contextual Info: HM51W17805 Series 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-631D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM51W17805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805 offers

HM5164400LJ-5

Abstract: HM5164400LJ-6 Hitachi DSA00196
Contextual Info: HM5164400 Series HM5165400 Series 64 M FP DRAM 16-Mword x 4-bit 8 k Refresh/4 k Refresh ADE-203-812A (Z) Preliminary Rev. 0.1 Nov. 1997 Description The Hitachi HM5164400 Series, HM5165400 Series are 64M-bit dynamic RAMs organized as 16,777,216word × 4-bit. They have realized high performance and low power by employing CMOS process technology.

HM5164165F

Abstract: HM5164165FJ-5 HM5164165FJ-6 HM5164165FLJ-5 HM5164165FLJ-6 HM5165165F HM5165165FJ-5 Hitachi DSA00205
Contextual Info: HM5164165F Series HM5165165F Series 64M EDO DRAM 4-Mword x 16-bit 8k refresh/4k refresh ADE-203-1058A(Z) Rev. 1.0 Oct. 5, 1999 Description The Hitachi HM5164165F Series, HM5165165F Series are 64M-bit dynamic RAMs organized as 4,194,304word × 16-bit. They have realized high performance and low power by employing CMOS process technology.