Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TSSOP8 THERMAL PERFORMANCE Search Results

    TSSOP8 THERMAL PERFORMANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    29C863ADM/B
    Rochester Electronics LLC AM29C863A -High Performance CMOS Bus Transceiver PDF Buy
    MG82380-20/B
    Rochester Electronics LLC 82380 - 32 Bit High Performance DMA Controller PDF Buy
    MG87C196KC/B
    Rochester Electronics LLC 87C196KC - 16-bit Microcontroller, high performance, MCS-96 microcontroller family PDF Buy
    MG87C196KD-16/R
    Rochester Electronics LLC 87C196KD - 16-bit Microcontroller, high performance, MCS-96 microcontroller family PDF Buy
    N87C196KC-20
    Rochester Electronics LLC 87C196KC - 16-bit Microcontroller, high performance, MCS-96 microcontroller family PDF Buy

    TSSOP8 THERMAL PERFORMANCE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    KEL58

    Abstract: HL58 mc10el58 SPICE model MC10EL58D BR1011 HEL58 E158 MC100EL58 MC10EL58 kl58
    Contextual Info: MC10EL58, MC100EL58 5V ECL 2:1 Multiplexer The MC10EL/100EL58 is a 2:1 multiplexer. The device is functionally equivalent to the E158 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E158, the EL58 is ideally suited for those


    Original
    MC10EL58, MC100EL58 MC10EL/100EL58 MC10EL58/D KEL58 HL58 mc10el58 SPICE model MC10EL58D BR1011 HEL58 E158 MC100EL58 MC10EL58 kl58 PDF

    HEL11

    Abstract: KEL11 KEL11 XA MC100EL11 MC10EL11
    Contextual Info: MC10EL11, MC100EL11 5V ECL 1:2 Differential Fanout Buffer The MC10EL/100EL11 is a differential 1:2 fanout buffer. The device is functionally similar to the E111 device but with higher performance capabilities. The within-device skew and propagation delay is


    Original
    MC10EL11, MC100EL11 MC10EL/100EL11 MC10EL11/D HEL11 KEL11 KEL11 XA MC100EL11 MC10EL11 PDF

    HEL16

    Abstract: kel16 E116 MC100EL16 MC10EL16
    Contextual Info: MC10EL16, MC100EL16 5V ECL Differential Receiver The MC10EL/100EL16 is a differential receiver. The device is functionally equivalent to the E116 device with higher performance capabilities. With output transition times significantly faster than the E116,


    Original
    MC10EL16, MC100EL16 MC10EL/100EL16 MC10EL11/D HEL16 kel16 E116 MC100EL16 MC10EL16 PDF

    LM75ADP

    Abstract: SE95 Temperature calibration AD1021A SE97 HVSON8 philips master replacement guide AD1021 ADM1032AR LM75AD tcn75-3.3mua
    Contextual Info: I2C-bus temperature sensors Small, accurate, low-cost sensors for advanced temperature regulation Accurate performance in a proven format NXP temperature sensors use the familiar I2C-bus/SMBus format* to deliver highly accurate temperature monitoring with low power consumption in a wide variety of applications.


    Original
    PDF

    Contextual Info: MA2504W10000000 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2504W is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load


    Original
    MA2504W10000000 MA2504W D020210 3000pcs 6000pcs PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD LV358 CMOS IC GENERAL PURPOSE, LOW VOLTAGE, RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS  SOP-8 DESCRIPTION 1 The UTC LV358 is a dual op amp with low supply current and low voltage 2.7-5.5V . It brings nice performance to low voltage and low


    Original
    LV358 LV358 QW-R502-316 PDF

    Contextual Info: Si6955ADQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.080 at VGS = - 10 V ± 2.9 0.135 at VGS = - 4.5 V ± 2.2 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 G1 TSSOP-8 D1


    Original
    Si6955ADQ Si6955ADQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si6969BDQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.6 0.040 at VGS = - 2.5 V - 3.8 RoHS* 0.055 at VGS = - 1.8 V - 3.0 COMPLIANT


    Original
    Si6969BDQ Si6969BDQ-T1 Si6969BDQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    MOSFET TSSOP-8

    Abstract: SI6410DQ
    Contextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D


    Original
    Si6410DQ Si6410DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MOSFET TSSOP-8 PDF

    KVL11

    Abstract: KV11 LVEL11 MC100LVEL11 MC100LVEL11D MC100LVEL11DR2 MC100LVEL11DT KV11 ON
    Contextual Info: MC100LVEL11 3.3V ECL 1:2 Differential Fanout Buffer The MC100LVEL11 is a differential 1:2 fanout buffer. The device is functionally similar to the E111 device but with higher performance capabilities. Having within-device skews and output transition times


    Original
    MC100LVEL11 MC100LVEL11 LVEL11 MC100LVEL11/D KVL11 KV11 MC100LVEL11D MC100LVEL11DR2 MC100LVEL11DT KV11 ON PDF

    MOSFET TSSOP-8

    Abstract: MOSFET TSSOP-8 dual n-channel L 81221 A1818 mosfet 6655
    Contextual Info: Si6966DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 0.040 at VGS = 2.5 V 3.9 • Halogen-free Option Available • TrenchFET Power MOSFETs: 2.5 V Rated Pb-free Available


    Original
    Si6966DQ Si6966DQ-T1 Si6966DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MOSFET TSSOP-8 MOSFET TSSOP-8 dual n-channel L 81221 A1818 mosfet 6655 PDF

    SI6925ADQ

    Contextual Info: Si6925ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.045 at VGS = 4.5 V 3.9 0.055 at VGS = 3.0 V 3.5 0.065 at VGS = 2.5 V 3.0 • Halogen-free RoHS COMPLIANT D2 D1 TSSOP-8 D1 1 S1 2 S1 3 G1


    Original
    Si6925ADQ Si6925ADQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    MOSFET TSSOP-8 dual n-channel

    Contextual Info: Si6928DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 4.0 0.050 at VGS = 4.5 V ± 3.4 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT D1 D2 TSSOP-8 8 D2


    Original
    Si6928DQ Si6928DQ-T1 Si6928DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MOSFET TSSOP-8 dual n-channel PDF

    SI6967DQ

    Contextual Info: Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V ± 5.0 0.045 at VGS = - 2.5 V ± 4.0 0.070 at VGS = - 1.8 V ± 3.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original
    Si6967DQ Si6967DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI6933DQ

    Contextual Info: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V ± 3.5 0.085 at VGS = - 4.5 V ± 2.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 TSSOP-8 G1 8 D2


    Original
    Si6933DQ Si6933DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI6925AD

    Abstract: pc based electronic notice board SI6925ADQ
    Contextual Info: Si6925ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.045 at VGS = 4.5 V 3.9 0.055 at VGS = 3.0 V 3.5 0.065 at VGS = 2.5 V 3.0 • Halogen-free RoHS COMPLIANT D2 D1 TSSOP-8 D1 1 S1 2 S1 3 G1


    Original
    Si6925ADQ Si6925ADQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI6925AD pc based electronic notice board PDF

    Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.015 at VGS = - 4.5 V - 7.4 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    Si6463BDQ 2002/95/EC Si6463BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    MOSFET TSSOP-8 dual n-channel

    Abstract: gs 069 0605
    Contextual Info: Si6954ADQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.053 at VGS = 10 V 3.4 0.075 at VGS = 4.5 V 2.9 • Halogen-free • TrenchFET Power MOSFETs: 2.5 V Rated RoHS COMPLIANT D1 D2 TSSOP-8


    Original
    Si6954ADQ Si6954ADQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MOSFET TSSOP-8 dual n-channel gs 069 0605 PDF

    SI6933DQ

    Contextual Info: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V ± 3.5 0.085 at VGS = - 4.5 V ± 2.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 TSSOP-8 G1 8 D2


    Original
    Si6933DQ Si6933DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    leadframe materials

    Contextual Info: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8


    Original
    Si6415DQ Si6415DQ-T1 Si6415DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 leadframe materials PDF

    Contextual Info: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8


    Original
    Si6543DQ Si6543DQ-T1 Si6543DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si6913DQ Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.021 at VGS = - 4.5 V - 5.8 0.028 at VGS = - 2.5 V - 5.0 0.037 at VGS = - 1.8 V - 4.4 • TrenchFET Power MOSFETs • Material categorization:


    Original
    Si6913DQ Si6913DQ-T1-E3 Si6913DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si6473DQ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0125 at VGS = - 4.5 V - 9.5 0.016 at VGS = - 2.5 V - 8.5 0.0215 at VGS = - 1.8 V - 7.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original
    Si6473DQ Si6473DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si6993DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.031 at VGS = - 10 V - 4.7 0.048 at VGS = - 4.5 V - 3.8 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT APPLICATIONS • Load Switch


    Original
    Si6993DQ Si6993DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF