TSP TYP A Search Results

din 74

Abstract: CSA-22 CSA-C22
Contextual Info: Industrial Power Supplies TSP Series, 78–600 Watt CB EMC LVD Innovative and Powerful Features! ◆ True industrial Grade Design ◆ Rugged Metal Case for Scheme IEC 60950-1 UL 60950-1 UL 508 UL 60079-15 ATEX II3G harsh industrial Environments ◆ For worldwide Use – Autoselect Input

din 74-AF4

Abstract: 500 watt smps circuit diagram TSP-BFM24 TSP-BCM24H BAT24 CSA-C22
Contextual Info: Industrial Power Supplies TSP-WR Series, 180­–600 Watt CB RoHS compliant Innovative and Powerful Features! ◆ For global use with single- and two phase EMC LVD Scheme IEC 60950-1 UL 60950-1 UL 508 pending wide-range input 100/ 230–500 VAC ◆ Rugged metal case for

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low

BUK78150-55

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

25C312

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

BUK9840-55

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has

PMV45EN

Contextual Info: Product specification PMV45EN N-channel TrenchMOS logic level FET Rev. 2 — 7 November 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

Contextual Info: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

IS66WVC2M16ALL

Abstract: CellularRAM 66WVC2M16ALL
Contextual Info: IS66WVC2M16ALL 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several

Contextual Info: IS66WVC2M16ALL Advanced Information 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several

IS66WVC1M16ALL

Abstract: CellularRAM 66WVC1M16ALL
Contextual Info: IS66WVC1M16ALL Advanced Information 16Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several

Contextual Info: IS66WVC2M16ALL Preliminary Information 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several

PMV31XN

Abstract: C3137
Contextual Info: PMV31XN µTrenchMOS extremely low level FET Rev. 01 — 26 February 2003 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV31XN in SOT23. 2. Features

07256

Contextual Info: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.

BUK1M200-50SGTD

Abstract: MS-013 SO20 s2615
Contextual Info: BUK1M200-50SGTD Quad channel logic level TOPFET Rev. 01 — 31 March 2003 Product data 1. Product profile 1.1 Description Quad temperature and overload protected power switch based on TOPFET Trench technology in a 20-pin surface mount plastic package. Product availability:

Contextual Info: 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAMTM 1.5 Memory MT45W4MW16BCGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.70V–1.95V VCC 1.70V–3.30V VCCQ1

DQ100

Abstract: transistor d514
Contextual Info: Rev. 1.0, Apr. 2010 K1C5616BKB 256Mb B-die UtRAM2 Multiplexed Synchronous Burst Uni-Transistor Random Access Memory. 16M x16bit datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Hitachi DSA00276

Contextual Info: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221A (Z) Preliminary Rev. 0.1 May. 10, 2001 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are

powerpc 601 advanced information

Abstract: Nippon capacitors Mpc601
Contextual Info: MOTOROLA Order this document by MPC2002/D SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for PowerPC – Based Systems The MPC2002SG and MPC2003SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the PowerPC 60x processors. The modules are configured as 32K x 72 and 64K x 72 bits in a 136 pin dual readout single

PMF370XN

Contextual Info: PMF370XN N-channel TrenchMOS extremely low level FET Rev. 03 — 20 June 2008 Product data sheet 1. Product profile 1.1 General description Extremely low level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for

BSH108

Abstract: 03ab10 MSB003 transistor 8722
Contextual Info: BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

PHT4NQ10LT

Abstract: SC-73
Contextual Info: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

SC-101

Abstract: PMZ760SN
Contextual Info: PMZ760SN µTrenchMOS standard level FET Rev. 01 — 24 February 2003 M3D883 Objective data BOTTOM VIEW 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: