TSOP6 PACKAGE Search Results
TSOP6 PACKAGE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 54ACT825/QKA | Rochester Electronics LLC | 54ACT825/QKA - Dual marked (5962-9161101MKA), D-Type Flip-Flop, 5V, 24-CFP |
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| TPH1R306PL | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQH | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPHR8504PL | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQ5 | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) | Datasheet |
TSOP6 PACKAGE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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charging ic laptop motherboard
Abstract: ic laptop motherboard 12V cooler MOTOR TSOP6 SOT23 package s1 sot363 voltage controller PMN23UN PMN34LN PMN34UN PMN40LN
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msd991charging ic laptop motherboardic laptop motherboard12v cooler motor+7 | |
c4554Contextual Info: PMN34UN µTrenchMOS ultra low level FET Rev. 01 — 26 February 2003 M3D302 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMN34UN in SOT457 TSOP6 . |
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pmn34unm3d302ot457c4554 | |
pmn45enContextual Info: PMN45EN TrenchMOS enhanced logic level FET Rev. 01 — 27 September 2002 M3D302 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMN45EN in SOT457 TSOP6 . |
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pmn45enm3d302ot457 | |
10189Contextual Info: PMN27UN TrenchMOS ultra low level FET Rev. 01 — 27 September 2002 M3D302 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMN27UN in SOT457 TSOP6 . |
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pmn27unm3d302ot45710189 | |
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Contextual Info: PMN28UN TrenchMOS ultra low level FET Rev. 01 — 27 September 2002 M3D302 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMN28UN in SOT457 TSOP6 . |
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pmn28unm3d302ot457 | |
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Contextual Info: PMN40LN TrenchMOS logic level FET M3D302 Rev. 01 — 13 November 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PMN40LN in SOT457 TSOP6 . 2. Features |
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pmn40lnm3d302ot457mbk092+1 | |
10937
Abstract: 1093
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pmn55lnm3d302ot45710937+1 | |
10938Contextual Info: PMN34LN µTrenchMOS logic level FET Rev. 01 — 21 March 2003 M3D302 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMN34LN in SOT457 TSOP6 . |
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pmn34lnm3d302ot45710938 | |
tsop6 marking 443
Abstract: NTGS3443T1 NTGS3443T1G
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ntgs3443t1ntgs3443t1/dtsop6 marking 443ntgs3443t1g | |
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Contextual Info: NTGS3443T1 Power MOSFET 2 Amps, 20 Volts P−Channel TSOP−6 Features • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature TSOP6 Surface Mount Package Pb−Free Package May be Available. The G−Suffix Denotes a |
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ntgs3443t11e-031e-021e-01+1 | |
TEA1752
Abstract: AGILENT 6812B ENV216 TEA1792DB1074 STPS20 power adapter for notebook schematic AN1114 BV 6285 TEA1792 AN11149
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um10526tea1792tstea1792db1074tea1752+8 | |
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Contextual Info: Wave soldering footprint Footprint information for wave soldering of TSOP6 package SOT457 5.3 1.5 4x 1.475 0.45 (2×) 5.05 1.475 1.45 (6×) 2.85 solder land solder resist occupied area Dimensions in mm www.nxp.com 2010 NXP B.V. preferred transport direction during soldering |
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ot457sot457 | |
SOT-457Contextual Info: Reflow soldering footprint Footprint information for reflow soldering of TSOP6 package SOT457 3.45 1.95 0.45 0.55 6x (6×) 0.95 3.3 2.825 0.95 0.7 (6×) 0.8 (6×) 2.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area |
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ot457sot457licesot457sot-457 | |
Diode ES1J
Abstract: Non-isolated Buck LED Driver IC
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um10840ssl5021bdb1267ssl5021btsdiode es1j+1 | |
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2sK2750 equivalent
Abstract: 4614 mosfet 2SK3567 equivalent 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent toshiba f5d 2SK2545 equivalent 2SK3566 equivalent 2sk3625
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powermosfet07tpc6004tpc6003tpc6005+13 | |
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Contextual Info: SO T4 57 SOT457 TSOP6; Tape reel SMD; standard product orientation 12NC ending 115 Rev. 1 — 27 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel |
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ot457msc074 | |
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Contextual Info: SO T4 57 SOT457 TSOP6; reel pack; reversed product orientation; 12NC ending 165 Rev. 1 — 27 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel |
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ot457msc074 | |
BSL207SPContextual Info: BSL207SP Rev. 2.0 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -20 V • Enhancement mode RDS on 41 mΩ • Super Logic Level (2.5 V rated) ID -6 A • 150°C operating temperature P-TSOP6-6 • Avalanche rated • dv/dt rated |
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bsl207spq67042-s4066 | |
4422 datasheet
Abstract: MBT35200MT1 MMBT6589T1
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npfsmbt35200m/doct-2000mbt35200mt1mmbt6589t1+2 | |
BSL207SPContextual Info: BSL207SP Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature P-Channel VDS -20 V Enhancement mode R DS on 41 m Super Logic Level (2.5 V rated) ID -6 A 150°C operating temperature P-TSOP6-6 Avalanche rated dv/dt rated |
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bsl207spq67042-s4066 | |
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Contextual Info: BSL215P OptiMOS P2 Small-Signal-Transistor Product Summary Features VDS • Dual P-channel RDS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V VGS=-4.5 V 150 mW VGS=-2.5 V 280 ID -1.5 • Avalanche rated A PG-TSOP6 • Qualified according to AEC Q101 |
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bsl215piec61249-2-21h6327 | |
BSL211SPContextual Info: BSL211SP Rev 1.1 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -20 V • Enhancement mode RDS on 67 mΩ • Super Logic Level (2.5 V rated) ID -4.7 • 150°C operating temperature A P-TSOP6-6 • Avalanche rated • dv/dt rated |
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bsl211spl63273000pcs/r726-bsl211sp | |
BSL211SPContextual Info: BSL211SP Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature P-Channel VDS -20 V Enhancement mode R DS on 67 m Super Logic Level (2.5 V rated) ID -4.7 150°C operating temperature A P-TSOP6-6 Avalanche rated dv/dt rated |
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bsl211spq67042-s4063 | |
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Contextual Info: Package outline TSOP6: Plastic thin small outline package; 6 leads SOT1353-1 B D X A E y HE 6 5 v 4 A Q A A2 A3 pin 1 index c 1 2 e bp w B 2 mm scale Dimensions (mm are the original dimensions) max nom min mm A A1 A2 1.1 0.1 1.0 0.9 0.013 0.9 bp D E 0.40 0.26 |
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ot1353-1sot1353-1sc-74 | |