TSOP-20 FOOTPRINT Search Results

Contextual Info: NTGS3443T1 Power MOSFET 4.4 Amps, 20 Volts P−Channel TSOP−6 http://onsemi.com Features • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available 4.4 AMPERES 20 VOLTS

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Contextual Info: NTGS3443T1 Power MOSFET 4.4 Amps, 20 Volts P−Channel TSOP−6 http://onsemi.com Features • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available 4.4 AMPERES 20 VOLTS

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Abstract: NTGS3443T1G NTGS3443T1
Contextual Info: NTGS3443T1 Power MOSFET 2 Amps, 20 Volts P−Channel TSOP−6 Features • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available 2 AMPERES 20 VOLTS RDS(on) = 65 mW Applications

NTGS3441T1G

Abstract: NTGS3441T1
Contextual Info: NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P−Channel TSOP−6 http://onsemi.com Features • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available 1 AMPERE 20 VOLTS RDS(on) = 90 mW

NTGS3443T1

Abstract: NTGS3443T1G tsop6 marking 443
Contextual Info: NTGS3443T1 Power MOSFET 2 Amps, 20 Volts P−Channel TSOP−6 http://onsemi.com Features • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available 2 AMPERES 20 VOLTS RDS(on) = 65 mW

Contextual Info: NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P−Channel TSOP−6 http://onsemi.com Features • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available 1 AMPERE 20 VOLTS RDS(on) = 90 mW

NTGS3441T1

Abstract: NTGS3441T1G
Contextual Info: NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P−Channel TSOP−6 http://onsemi.com Features • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available 1 AMPERE 20 VOLTS RDS(on) = 90 mW

NTGS3441T1

Contextual Info: NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P–Channel TSOP–6 Features • Ultra Low RDS on • Higher Efficiency Extending Battery Life • Miniature TSOP–6 Surface Mount Package http://onsemi.com 1 AMPERE 20 VOLTS RDS(on) = 90 mW Applications • Power Management in Portable and Battery–Powered Products, i.e.:

Contextual Info: NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P–Channel TSOP–6 Features • Ultra Low RDS on • Higher Efficiency Extending Battery Life • Miniature TSOP–6 Surface Mount Package http://onsemi.com 1 AMPERE 20 VOLTS RDS(on) = 90 mW Applications • Power Management in Portable and Battery–Powered Products, i.e.:

NTGS3441T1

Contextual Info: NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P–Channel TSOP–6 Features • Ultra Low RDS on • Higher Efficiency Extending Battery Life • Miniature TSOP–6 Surface Mount Package http://onsemi.com 1 AMPERE 20 VOLTS RDS(on) = 90 mW Applications • Power Management in Portable and Battery–Powered Products, i.e.:

Contextual Info: NTGS3441, NVGS3441 Power MOSFET 1 Amp, 20 Volts, P−Channel TSOP−6 Features • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package NV Prefix for Automotive and Other Applications Requiring Unique

NVGS3443T1G

Abstract: NVGS3443 tsop6 marking 443 NTGS3443
Contextual Info: NTGS3443, NVGS3443 Power MOSFET 4.4 Amps, 20 Volts P−Channel TSOP−6 http://onsemi.com Features • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package These Devices are Pb−Free and are RoHS Compliant

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Contextual Info: NTGS3441B Power MOSFET -20 V, -3.5 A, Single P-Channel, TSOP-6 Features •ăLow RDS on in TSOP-6 Package •ă2.5 V Gate Rating •ăThis is a Pb-Free Device http://onsemi.com Applications •ăBattery Switch and Load Management Applications in Portable

Contextual Info: NTGS3441B Power MOSFET -20 V, -3.5 A, Single P-Channel, TSOP-6 Features •ăLow RDS on in TSOP-6 Package •ă2.5 V Gate Rating •ăThis is a Pb-Free Device http://onsemi.com Applications •ăBattery Switch and Load Management Applications in Portable

Contextual Info: NTGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features •ăLeading Edge Trench Technology for Low On Resistance •ăLow Gate Charge for Fast Switching •ăSmall Size 3 x 2.75 mm TSOP-6 Package •ăThis is a Pb-Free Device http://onsemi.com

NTGS3130NT1G

Contextual Info: NTGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features •ăLeading Edge Trench Technology for Low On Resistance •ăLow Gate Charge for Fast Switching •ăSmall Size 3 x 2.75 mm TSOP-6 Package •ăThis is a Pb-Free Device http://onsemi.com

Contextual Info: NTGD3149C Power MOSFET Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual Features • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size 3 x 3 mm Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response

Contextual Info: NTGS3130N, NVGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features • • • • • Leading Edge Trench Technology for Low On Resistance Low Gate Charge for Fast Switching Small Size 3 x 2.75 mm TSOP−6 Package NV Prefix for Automotive and Other Applications Requiring Unique

Contextual Info: NTGS3136P Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 Features •ăLow RDS on in TSOP-6 Package •ă1.8 V Gate Rating •ăFast Switching •ăThis is a Pb-Free Device http://onsemi.com V(BR)DSS Applications •ăOptimized for Battery and Load Management Applications in

NTGD3122CT1G

Abstract: NTGD3122C mosfet 23 Tsop-6
Contextual Info: NTGD3122C Power MOSFET Complementary, 20 V, +3.3/−2.5 A, TSOP−6 Dual Features • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size 3 x 3 mm Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response

NTGD3149CT1G

Abstract: mosfet 23 Tsop-6
Contextual Info: NTGD3149C Power MOSFET Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual Features • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size 3 x 3 mm Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response

NTGS3136PT1G

Contextual Info: NTGS3136P Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 Features •ăLow RDS on in TSOP-6 Package •ă1.8 V Gate Rating •ăFast Switching •ăThis is a Pb-Free Device http://onsemi.com V(BR)DSS Applications •ăOptimized for Battery and Load Management Applications in

5M MARKING CODE SCHOTTKY DIODE

Abstract: S6 marking code onsemi Diode NTGF3123P mosfet 23 Tsop-6 mosfet tsop-6 23 NTGF3123PT1G
Contextual Info: NTGF3123P Power MOSFET and Schottky Diode 20 V, 2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 Dual http://onsemi.com Features • • • • • • FETKY P−Channel and Schottky Diode Small Size 3 x 3 mm Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance

NTGS3443BT1G

Contextual Info: NTGS3443B Power MOSFET -20 V, -4.2 A, Single P-Channel, TSOP-6 Features •ăLow RDS on in TSOP-6 Package •ă2.5 V Gate Rating •ăFast Switching •ăThis is a Pb-Free Device http://onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 60 mW @ -4.5 V -3.7 A 90 mW @ -2.7 V