TSOP 6 MARKING 52 Search Results

KMA6D0P20X

Abstract: M01 marking
Contextual Info: SEMICONDUCTOR KMA6D0P20X MARKING SPECIFICATION TSOP-6 PACKAGE 1. Marking method Laser Marking. 2. Marking M01 1 JA 2 3 No. Item Marking Description Device Mark M01 KMA6D0P20X * Lot No. JA Manufacturing date Year/Week Pin No. Dot Pin 1 Note) * Lot No. marking method

KMA2D8P20X

Abstract: Marking 52 tsop 6 marking A1 6
Contextual Info: SEMICONDUCTOR KMA2D8P20X MARKING SPECIFICATION TSOP-6 PACKAGE 1. Marking method Laser Marking. 2. Marking M05 1 01 2 3 No. Item Marking Description Device Mark M05 KMA2D8P20X * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1

TSOP-6

Abstract: marking A1 4 PIN marking 52 Marking 52 tsop 6 TSOP 6 marking 52 E5 Marking marking A1 6 E1 M02
Contextual Info: SEMICONDUCTOR KMA2D7DP20X MARKING SPECIFICATION TSOP-6 PACKAGE 1. Marking method Laser Marking. 2. Marking M02 1 01 2 3 No. Item Marking Description Device Mark M02 KMA2D7DP20X * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1

MICRON POWER RESISTOR 24W

Contextual Info: ADVANCE MICRON ft M T24D T J472(S 4 MEG x 72 DRAM MODULE SElMCONOUCTQft MC 4 MEG X 72 DRAM DRAM MODULE 5.0V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Components SOJ TSOP D DT • Packages

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD444010L-X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. The µPD444010L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

UPD23C8000XCZ

Abstract: UPD23C8000XCZ-XXX UPD23C8000X d23cxxxxx PD23C8000 UPD23C8000XGY-XXX-MKH UPD23C8000XGX-XXX UPD23C8000XGX UPD23C8000XG5XXX7JF
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000X 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000X is a 8, 388, 608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1, 048, 576 words by 8 bits, WORD mode: 524, 288 words by 16 bits).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000LX 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000LX is a 8,388,608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1,048,576 words by 8 bits, WORD mode: 524,288 words by 16 bits).

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444010L-X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. The µPD444010L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444010A-X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444010A-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. The µPD444010A-X has two chip enable pins (/CE1, CE2) to extend the capacity.

UPD23C8000XGY-XXX-MKH

Abstract: UPD23C8000XCZ-XXX UPD23C8000XCZ
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000X 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000X is a 8, 388, 608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1, 048, 576 words by 8 bits, WORD mode: 524, 288 words by 16 bits).

upd23c8000

Abstract: UPD23C80
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C8000LX 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The µPD23C8000LX is a 8,388,608 bits mask-programmable ROM. The word organization is selectable (BYTE mode: 1,048,576 words by 8 bits, WORD mode: 524,288 words by 16 bits).

CS18LV40963CI

Abstract: CS18LV40963D
Contextual Info: High Speed Super Low Power SRAM 512k word x 8 bit CS18LV40963 „ DESCRIPTION The CS18LV40963 is a high performance, high speed, low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.7 to 3.6V supply voltage. Advanced CMOS technology and circuit techniques

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT uPD23C4001 EJ 4M-BIT MASK-PROGRAMMABLE ROM 512K-WORD BY 8-BIT Description The ¿¡PD23C4001 EJ is a 4,194,304 bits 524,288 w ords by 8 bits m ask-program m able ROM. The active levels of OE (O utput Enable Input) can be selected with mask-option.

D23C8000

Abstract: PD23C8000L P42C-100-600A upd23c8000
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE / 512K-WORD BY 16-BIT (WORD MODE) Description The ^¡PD23C8000L is a 8,388,608 bits mask-programmable ROM. The word organization isselectable (BYTE mode : 1,048,576 words by 8 bits, WORD mode : 524,288 words by 16 bits).

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The ¿¡PD23C8000X is a 8, 388, 608 bits m ask-program m able ROM. The w ord organization is selectable (BYTE mode: 1, 048, 576 w ords by 8 bits, W ORD mode: 524, 288 w ords by 16 bits).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT _ ¿¿PD444010L-X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. The ^¡PD444010L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

uPD23C4001EJ

Abstract: UPD23C4001EJGW uPD23C4001 PD23C4001 PD23C4001EJ nec 40-pin plastic dip
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C4001EJ 4M-BIT MASK-PROGRAMMABLE ROM 512K-WORD BY 8-BIT Description The µPD23C4001EJ is a 4,194,304 bits 524,288 words by 8 bits mask-programmable ROM. The active levels of OE (Output Enable Input) can be selected with mask-option.

d23c8000xcz

Abstract: s48g 23C8000 PD23C8000xcz
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The /¿PD23C8000X is a 8, 388, 608 bits m ask-program m able ROM. The word organization is selectable (BYTE mode: 1, 048, 576 w ords by 8 bits, W ORD mode: 524, 288 words by 16 bits).

STMicroelectronics smd marking code

Abstract: BGA and QFP Package 14x14 STMICROELECTRONICS MSL STMicroelectronics date code tssop-14 HiQuad package STMicroelectronics pentawatt date code opto mold compound infineon msl TQFP 14X20 ST TSSOP Marking
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN CRP/04/744 LEAD-FREE CONVERSION PROGRAM Compliance with RoHS 1 1 RoHS = Restriction of the use of certain Hazardous Substances European directive 2002/95/EC November 18, 2004 Page 1/12 2004 STMicroelectronics - All Rights Reserved

LGA 1156 PIN OUT diagram

Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
Contextual Info: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)

CM316

Abstract: toshiba tc55 TC55VCM316BSGN TC55VCM316BTGN TC55YCM316BSGN TC55YCM316BTGN TC55YEM316BXGN55 TC55VCM316BSGN55 TC55VEM316B
Contextual Info: TC55VCM316BTGN, TC55VCM316BSGN, TC55VEM316BXGN45,55 TC55YCM316BTGN, TC55YCM316BSGN, TC55YEM316BXGN55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM316B, TC55VEM316B, TC55YCM316B and TC55YEM316B is a 8,388,608-bit static random

STMicroelectronics smd marking code

Abstract: smd marking code stmicroelectronics BGA bga 10x13 BGA 15X15 BGA 23X23 HEPTAWATT SMD Marking STMicroelectronics tqfp INFINEON package tqfp PART MARKING PLCC Part Marking STMicroelectronics Date Code Marking STMicroelectronics PACKAGE DPAK
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MLD-MIC/05/943 Notification Date 02/23/2005 CONVERSION TO PB-FREE PRODUCTION MIC - MICROCONTROLLERS 1/4 PCN MLD-MIC/05/943 - Notification Date 02/23/2005 Table 1. Change Identification Product Identification Product Family/Commercial Product

TC55VCM316BTGN55

Abstract: TC55VCM316BSGN55 toshiba tc55 TC55VCM316BSGN TC55VCM316BTGN TC55VEM316BXGN40 TC55YCM316BSGN TC55YCM316BTGN TC55YEM316BXGN55
Contextual Info: TC55VCM316BTGN, TC55VCM316BSGN, TC55VEM316BXGN40,55 TC55YCM316BTGN, TC55YCM316BSGN, TC55YEM316BXGN55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM316B, TC55VEM316B, TC55YCM316B and TC55YEM316B is a 8,388,608-bit static random