TSOP 1838 Search Results

1838 ir tsop

Abstract: OTE20
Contextual Info: MITSUBISHI LSIs MH32V7245BST -5, -6 HYPER PAGE MODE 2415919104 - BIT 33554432 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH32V7245BST is 33554432-word x 72-bit dynamic ram stacked structural module. This consist of thirty-six industry standard 16M x 4 dynamic RAMs in TSOP and

CY62148-70ZSC

Abstract: CY62148 CY62148-70SC CY62148-70SI CY62148L-70SC CY62148L-70ZSC CY62148LL-70SC CY62148LL-70ZSC 1838 t pin diagram
Contextual Info: CY62148 PRELIMINARY 512K x 8 Static RAM Features an automatic power-down feature that reduces power consumption by more than 99% when deselected. • 4.5V–5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW max. • Low standby power (L version)

32 pin soic 450mil

Abstract: CY62128LL-70SI SOIC 32
Contextual Info: fax id: 1079 W / CYPRESS PRELIMINARY_ CY62148 512 K x 8 Static RAM an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. Features • 4.5V-5.5V operation • CMOS for optimum speed/power • Low active power

32 pin soic 450mil

Abstract: CY62128LL-70SI s34 diode CY62148 CY62128LL-70SC CY62148-70SC CY62148-70SI CY62148-70ZSC CY62148L-70SC CY62148L-70ZSC
Contextual Info: fax id: 1079 PRELIMINARY CY62148 512K x 8 Static RAM Features an automatic power-down feature that reduces power consumption by more than 99% when deselected. • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW max.

CY62148LL-70SC

Abstract: variable frequency drive circuit diagram CY62148 SOIC 32
Contextual Info: 1CY62148 CY62148 512K x 8 Static RAM Features an automatic power-down feature that reduces power consumption by more than 99% when deselected. • 4.5V − 5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW max. • Low standby power (L version)

Contextual Info: fax id: 1079 CY62148 PRELIMINARY W / C Y P R E S S _ 512Kx 8 Static RAM Features an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. • 4 .5V -5.5V operation • CMOS for optimum speed/power • Low active power

IS62C256AL

Abstract: IS62C256AL-45ULI IS62C256AL-25ULI IS62C256AL-45TLI IS65C256AL-25TA3
Contextual Info: IS65C256AL IS62C256AL 32K x 8 LOW POWER CMOS STATIC RAM MAY 2012 FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW typical • Low standby power — 150 µW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh

Contextual Info: ISSI IS65C1024AL PRELIMINARY INFORMATION AUGUST 2002 128K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 55, 70 ns • Low active power: 50 mW typical • Low standby power: 100 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

Contextual Info: ISSI IS65C1024AL PRELIMINARY INFORMATION JULY 2002 128K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 55, 70 ns • Low active power: 50 mW typical • Low standby power: 100 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

CY62148BLL-55ZI

Abstract: CY62148BLL-55SC CY62148BLL-55SI
Contextual Info: CY62148B 512K x 8 Static RAM Features an automatic power-down feature that reduces power consumption by more than 99% when deselected. • 4.5V–5.5V operation • CMOS for optimum speed/power • Low active power — 165 mW max. • Low standby power (L version)

Contextual Info: IS62C1024AL IS65C1024AL 128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW typical • Low standby power: 20 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications

IS62C1024AL

Abstract: IS62C1024AL-35QLI IS62C1024AL-35Q IS62C1024AL-35QI IS62C1024AL-35T IS62C1024AL-35TI IS65C1024AL IS62C1024AL-35TLI
Contextual Info: IS62C1024AL IS65C1024AL 128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45 ns • Low active power: 100 mW typical • Low standby power: 20 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications

CY62148E

Abstract: cy62148ell-45z CY62148ELL-55SXI
Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ■ Voltage range: 4.5 V to 5.5 V ■ Pin compatible with CY62148B ■ Ultra low standby power ❐ Typical standby current: 1 µA

1838 pin configuration

Abstract: IS62C1024AL-35QLI IS62C1024AL-35TLI IS65C1024AL-45QLA3 IS62C1024AL IS62C1024AL-35Q IS62C1024AL-35QI IS62C1024AL-35T IS62C1024AL-35TI IS65C1024AL
Contextual Info: IS62C1024AL IS65C1024AL 128K x 8 LOW POWER CMOS STATIC RAM JULY 2008 FEATURES DESCRIPTION • High-speed access time: 35, 45 ns • Low active power: 100 mW typical • Low standby power: 20 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

CY62148E

Abstract: CY62148B CY62148ELL CY62148ELL-45ZSXI CY62148ELL-55SXI 249276
Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This

CY62148E

Abstract: CY62148B CY62148ELL CY62148ELL-45ZSXI CY62148ELL-55SXI 330281
Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This

IS65C1024AL-45QLA3

Abstract: IS62C1024AL IS62C1024AL-35Q IS62C1024AL-35QI IS62C1024AL-35QLI IS62C1024AL-35T IS62C1024AL-35TI IS65C1024AL
Contextual Info: ISSI IS62C1024AL IS65C1024AL 128K x 8 LOW POWER CMOS STATIC RAM NOVEMBER 2006 FEATURES DESCRIPTION • High-speed access time: 35, 45 ns • Low active power: 100 mW typical • Low standby power: 20 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

M68Z512

Contextual Info: M68Z512 4 Mbit 512 Kbit x 8 Low Power SRAM with Output Enable FEATURES SUMMARY • ULTRA LOW DATA RETENTION CURRENT Figure 1. Package – 100nA (typical) – 10µA (max) ■ OPERATION VOLTAGE: 5.0V ± 10% ■ 512 Kbit x 8 SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns

CY62148E

Abstract: CY62148e CY62148b
Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: M68Z512 4 Mbit 512Kb x8 Low Power SRAM with Output Enable • ULTRA LOW DATA RETENTION CURRENT – 100nA (typical) – 10µA (max) ■ OPERATION VOLTAGE: 5V ±10% ■ 512 Kbit x8 SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ ■ LOW VCC DATA RETENTION: 2V

Contextual Info: M68Z512 4 Mbit 512Kb x8 Low Power SRAM with Output Enable PRELIMINARY DATA • ULTRA LOW DATA RETENTION CURRENT – 100nA (typical) – 10µA (max) ■ OPERATION VOLTAGE: 5V ±10% ■ 512 Kbit x8 SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns

Contextual Info: M68Z512 4 Mbit 512Kb x8 Low Power SRAM with Output Enable • ULTRA LOW DATA RETENTION CURRENT – 100nA (typical) – 10µA (max) ■ OPERATION VOLTAGE: 5V ±10% ■ 512 Kbit x8 SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ ■ LOW VCC DATA RETENTION: 2V

CY62148E

Contextual Info: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features advanced circuit design to provide ultra low standby current. This is ideal for providing More Battery Life (MoBL) in portable applications. The device also has an automatic power-down

IS65C1024AL

Contextual Info: ISSI IS65C1024AL PRELIMINARY INFORMATION SEPTEMBER 2002 128K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 55, 70 ns • Low active power: 50 mW typical • Low standby power: 100 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable