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    TSM3443CX6 RF Search Results

    TSM3443CX6 RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LXMSJZNCMH-225
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    		Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag PDF
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    		Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit PDF
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    TSM3443CX6 RF Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TSM3443CX6 RFG
    		Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 20V 4.7A SOT26 Original PDF 207.1KB
    SF Impression Pixel

    TSM3443CX6 RF Price and Stock

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    Taiwan Semiconductor TSM3443CX6-RFG

    MOSFET P-CHANNEL 20V 4.7A SOT26
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    DigiKey () TSM3443CX6-RFG Cut Tape 28,465 1
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    TSM3443CX6-RFG Digi-Reel 28,465 1
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    TSM3443CX6-RFG Reel 24,000 3,000
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    Taiwan Semiconductor TSM3443CX6 RFG

    - Tape and Reel (Alt: TSM3443CX6 RFG)
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    Avnet Americas TSM3443CX6 RFG Reel 12 Weeks 12,000
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    Mouser Electronics TSM3443CX6 RFG 14,546
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    Verical TSM3443CX6 RFG 24,000 3,000
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    TME TSM3443CX6 RFG 1
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    EBV Elektronik TSM3443CX6 RFG 14 Weeks 3,000
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    New Advantage Corporation TSM3443CX6 RFG 33,000 1
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    TSC Electronics Ltd TSM3443CX6 RF

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    Bristol Electronics TSM3443CX6 RF 2,959
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    Others TSM3443CX6RF

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    ComSIT USA TSM3443CX6RF 2,175
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    Others TSM3443CX6 RF

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    Chip 1 Exchange TSM3443CX6 RF 3,835
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    TSM3443CX6 RF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TSM3443 20V P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDSON (mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Block Diagram ● Advance Trench Process Technology


    Original     		TSM3443 OT-26 TSM3443CX6 PDF

    Contextual Info: TAIW AN $ TSM3443 SEMICONDUCTOR 20V P-Channei MOSFET bl RoHS CO M PLIANCE S O T -2 S 654 P in D e fin itio n : 1. D rain 6. Drain 2. D rain 5, Drain 3. Gate PRODUCT SUM M ARY V os V 4. Source 20 1 23 Features R dson (m Q ) I d (A ) 60 @ VGS = -4.5V -4.7


    OCR Scan     		TSM3443 TSM3443CX6 OT-26 PDF

    Contextual Info: TSM3443 20V P-Channel MOSFET Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source SOT-26 PRODUCT SUMMARY VDS V RDSON (mΩ) -20 Features ID (A) 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Block Diagram ● Advance Trench Process Technology


    Original     		TSM3443 OT-26 TSM3443CX6 PDF

    TSM3443CX6 RF

    Abstract: MARKING SO SOT26
    Contextual Info: TSM3443 20V P-Channel MOSFET Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source SOT-26 PRODUCT SUMMARY VDS V RDSON (mΩ) 20 Features ID (A) 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Block Diagram ● Advance Trench Process Technology


    Original     		TSM3443 OT-26 TSM3443CX6 OT-26 TSM3443CX6 RF MARKING SO SOT26 PDF

    SOT-26 ci

    Abstract: TSM3443CX6 C07 MARKING CODE marking AAW 00197h
    Contextual Info: $ TAIW AN TSM3443 SEMICONDUCTOR 20V P-Channei MOSFET pb RoHS CO M PLIANCE P in D e fin itio n : PRODUCT SUM M ARY 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V os (V ) 20 1 23 Features R dson (m Q ) I d (A ) 60 @ VGS = -4.5V -4.7 100 <g> VGS = -2.5V


    OCR Scan     		M3443 OT-26 TSM3443CX6 SOT-26 ci C07 MARKING CODE marking AAW 00197h PDF

    TSM3443

    Abstract: TSM3443CX6 P-Channel MOSFET code L 1A marking pa sot-26
    Contextual Info: TSM3443 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 Features ID (A) 65 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Block Diagram ● Advance Trench Process Technology


    Original     		TSM3443 OT-26 TSM3443CX6 TSM3443 P-Channel MOSFET code L 1A marking pa sot-26 PDF