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    TSM2302CX RF Search Results

    TSM2302CX RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
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    TSM2302CX RF Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TSM2302CX RFG
    		Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 20V 3.9A SOT23 Original PDF 338.31KB
    SF Impression Pixel

    TSM2302CX RF Price and Stock

    Taiwan Semiconductor

    Taiwan Semiconductor TSM2302CX-RFG

    MOSFET N-CHANNEL 20V 3.9A SOT23
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    DigiKey () TSM2302CX-RFG Digi-Reel 40,564 1
    • 1 $0.72
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    TSM2302CX-RFG Cut Tape 40,564 1
    • 1 $0.72
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    TSM2302CX-RFG Reel 39,000 3,000
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    Taiwan Semiconductor TSM2302CX RFG

    Transistor MOSFET N-CH 20V 3.9A 3-Pin SOT-23 Plastic T/R - Tape and Reel (Alt: TSM2302CX RFG)
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    Avnet Americas TSM2302CX RFG Reel 12 Weeks 12,000
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    Mouser Electronics TSM2302CX RFG
    • 1 $0.71
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    Newark () TSM2302CX RFG Cut Tape 9,365 5
    • 1 $0.58
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    TSM2302CX RFG Reel 3,000
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    TME TSM2302CX RFG 6,034 1
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    Chip Stock TSM2302CX RFG 181,807
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    EBV Elektronik TSM2302CX RFG 3,000
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    Taiwan Semiconductor TSM2302CXRF

    Transistors
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    Vyrian TSM2302CXRF 1,137
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    TSM2302CX RF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TSM2302

    Abstract: TSM2302CX RF TSM2302CX ultra low igss pA mosfet
    Contextual Info: TSM2302 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 65 @ VGS = 4.5V 2.8 95 @ VGS = 2.5V 2.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		TSM2302 OT-23 TSM2302CX TSM2302 TSM2302CX RF ultra low igss pA mosfet PDF

    TSM2302CX

    Abstract: TSM2302CX RF TSM2302 n-channel mosfet SOT-23 marking 6A SOT 23 MOSFET N SOT-23 MOSFET SOT-23
    Contextual Info: TSM2302 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 65 @ VGS = 4.5V 2.8 95 @ VGS = 2.5V 2.0 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		TSM2302 OT-23 TSM2302CX TSM2302CX RF TSM2302 n-channel mosfet SOT-23 marking 6A SOT 23 MOSFET N SOT-23 MOSFET SOT-23 PDF

    Contextual Info: TSM2302 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 65 @ VGS = 4.5V 2.8 95 @ VGS = 2.5V 2.0 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


    Original     		TSM2302 OT-23 TSM2302CX PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF