TSHG5510 Search Results
TSHG5510 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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TSHG5510 | Vishay Semiconductors | Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER 830NM 5MM 40DEG2 | Original | 5 |
TSHG5510 Price and Stock
Vishay Semiconductors TSHG5510EMITTER IR 830NM 100MA RADIAL |
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TSHG5510 | Bulk | 4,000 |
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Vishay Intertechnologies TSHG5510Ir Emitter 830Nm 5Mm 40Deg; Viewing Angle:38°; Diode Case Style:T-1 3/4 (5Mm); Forward Current If(Av):100Ma; Forward Voltage Vf Max:1.45V; Rise Time:15Ns; Fall Time Tf:15Ns; Operating Temperature Min:-40°C; Product Range:-; Msl:- Rohs Compliant: Yes |Vishay TSHG5510 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSHG5510 | Bulk | 1 |
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TSHG5510 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSHG5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 830 nm |
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TSHG5510 2002/95/EC 2002/96/EC TSHG5510 11-Mar-11 | |
Contextual Info: TSHG5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 830 nm |
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TSHG5510 TSHG5510 2002/95/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
TSHG5510Contextual Info: TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 21061 DESCRIPTION TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and |
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TSHG5510 TSHG5510 18-Jul-08 | |
Contextual Info: TSHG5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 830 nm |
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TSHG5510 TSHG5510 2002/95/EC 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
TSHG5510Contextual Info: TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 830 nm |
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TSHG5510 2002/95/EC 2002/96/EC TSHG5510 11-Mar-11 | |
TSHG5510Contextual Info: TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 830 nm |
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TSHG5510 2002/95/EC 2002/96/EC TSHG5510 18-Jul-08 | |
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - IR Emitters with Radient Intensity up to 600 m/W/sr at 100 mA Infrared Emitters 830 nm, 850 nm, and 870 nm High Intensity and High Optical Power Infrared Emitters KEY FEATURES |
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VSMY3850 TSHG8200 TSHG5510 VSMY7850X01 TSFF5410 TSFF5510 VSMF4720 TSFF5210 VSMY7852X01 VMN-PT0211-1311 | |
TSSP4038Contextual Info: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2 |
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VMN-MS6520-1311 TSSP4038 | |
mdd 2605
Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
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element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943 | |
sensor BPW34 application note
Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
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VMN-MS6520-1012 sensor BPW34 application note touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note | |
TSUS3400
Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
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VMN-SG2123-1010 TSUS3400 VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01 | |
Vishay TYPE 40D
Abstract: Vishay 40d AC 1506 panasonic inverter dv 707
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VMN-MS6520-1506 Vishay TYPE 40D Vishay 40d AC 1506 panasonic inverter dv 707 | |
TSHG8200
Abstract: CCTV infrared VSMY1850
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VMN-PT0211-1101 TSHG8200 CCTV infrared VSMY1850 | |
sensor BPW34 application note
Abstract: CEA-2038 TSOP4438 touch sensitive siren using transistor VSMY2850 BP104 application note TEMD6200 TSOP58038 vo2223 TEMD6200FX01
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VMN-MS6520-1201 sensor BPW34 application note CEA-2038 TSOP4438 touch sensitive siren using transistor VSMY2850 BP104 application note TEMD6200 TSOP58038 vo2223 TEMD6200FX01 | |
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Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Optoelectronics エミッタ, ディテクタ, センサー Optoelectronics - エミッタ, ディテクタ, センサー 赤外線エミッタフォトディテクタ、オプティカルセンサー 赤外線エミッタ |
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VMN-SG2180-1305 | |
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - Emitters, Detectors, Optical Sensors Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors |
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VCNL4010 VCNL4020 VCNL3020 VMN-SG2123-1404 | |
Eye SafetyContextual Info: Eye Safety www.vishay.com Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC 62471 based on CIE S009 INTRODUCTION RISK ASSESSMENT FOR LED - APPLICATIONS Product safety legislation (e.g. general product safety laws |
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22-Jan-15 Eye Safety |