TSF10H100C Search Results
TSF10H100C Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TSF10H100C |
|
DIODE ARRAY SCHOTT 100V ITO220AB | Original | 579.96KB | 6 | ||
| TSF10H100C C0G |
|
Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTT 100V ITO220AB | Original | 243.43KB |
TSF10H100C Price and Stock
Taiwan Semiconductor TSF10H100CDIODE ARR SCHOT 100V 5A ITO220AB |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
TSF10H100C | Tube | 994 | 1,000 |
|
Buy Now | |||||
Taiwan Semiconductor TSF10H100C C0GDiode Schottky 100V 10A 3-Pin(3+Tab) ITO-220AB Tube |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
TSF10H100C C0G | 1,000 | 9 |
|
Buy Now | ||||||
|
TSF10H100C C0G | 1,000 | 99 Weeks | 1 |
|
Buy Now | |||||
TSF10H100C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency |
Original |
TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307010 | |
|
Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
Original |
TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020 | |
|
Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency |
Original |
TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309046 | |
|
Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
Original |
TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020 | |
|
Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency |
Original |
TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020 | |
|
Contextual Info: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability |
Original |
TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408022 |