TSC 900 A Search Results

900v mosfet

Abstract: n-channel 900v 9a
Contextual Info: TSM9N90CN 900V N-Channel Power MOSFET TO-3PN PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.4 @ VGS =10V ID (A) 9.5 General Description The TSM9N90CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

design of mosfet based power supply

Contextual Info: TSM7N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.9 @ VGS =10V ID (A) 3.5 General Description The TSM7N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

DIODE HALF BRIDGE TO-220

Abstract: power mosfet 900v MOSFET TO-220
Contextual Info: TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 4 @ VGS =10V ID (A) 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

Contextual Info: TSM7N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.9 @ VGS =10V ID (A) 7 General Description The TSM7N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

n-channel 900v 9a

Abstract: TSM9N90CZ TSM9N90 power mosfet 900v
Contextual Info: TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.4 @ VGS =10V ID (A) 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

mur160

Contextual Info: MUR160 thru MUR190 Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated High Efficient Rectifiers - Designed for use in switching power supplies, 'inverters and as free wheeling diodes - High efficiency, Low VF - Ultrafast recovery time for high efficiency

A12 diode

Abstract: MOSFET 900V TO-220 MOSFET 50V 100A TO-220 power mosfet 900v
Contextual Info: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This

sot-363 n-channel mosfet

Abstract: GD 363 A2 N-Channel n-channel mosfet transistor TSM1412 SOT363 44
Contextual Info: TSM1412 Preliminary 20V N-Channel MOSFET SOT-363 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 34 @ VGS = 4.5V 3 38 @ VGS = 2.5V 3 44 @ VGS = 2.0V 3 Block Diagram ● Advance Trench Process Technology

Contextual Info: LL4148/LL4448/LL914B Taiwan Semiconductor Small Signal Product CREAT BY ART High Speed SMD Switching Diode FEATURES - Fast switching device trr<4.0ns - Surface device type mounting - Matte Tin(Sn) terminal finish - Pb free version and RoHS compliant MECHANICAL DATA

Contextual Info: TS4B01G thru TS4B07G Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Bridge Rectifiers - Glass passivated junction - Ideal for printed circuit board - High case dielectric strength of 2000VRMS - Reliable low cost construction - UL Recognized File # E-326243

TSM2314

Abstract: MOSFET N SOT-23 n-channel mosfet transistor Power MOSFET N-Channel sot-23 ultra low igss pA
Contextual Info: TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 100 @ VGS = 1.8V 2.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

TSM2314

Abstract: TSM2314CX Marking d12 sot23 d12 MARKING PA TR SOT-23 n-channel mosfet SOT-23
Contextual Info: TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 100 @ VGS = 1.8V 2.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

marking code 936b

Abstract: 927B marking
Contextual Info: 1SMB5926 thru 1SMB5956 Taiwan Semiconductor CREAT BY ART Surface Mount Silicon Zener Diodes FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Low inductance - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: TS8P01G thru TS8P07G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1 A - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

8392L

Contextual Info: &TDK. TSC 78Q8392L Low Power Ethernet Coaxial Transceiver TDK SEMICONDUCTOR CORP. October 1996 FEATURES DESCRIPTION The TSC 78Q8392L Ethernet Transceiver is a low power BiCMOS coax line transmitter/receiver. The device includes analog transmit and receive buffers, a

Contextual Info: TS6P01G thru TS6P07G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1 A - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

n-channel mosfet SOT-23

Abstract: tsm2314
Contextual Info: TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 100 @ VGS = 1.8V 2.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

Schottky

Contextual Info: MBRS1045CT-Y thru MBRS10150CT-Y Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

10100CT

Contextual Info: MBRS1035CT thru MBRS10150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: BZD17C SERIES Taiwan Semiconductor CREAT BY ART Voltage Regulator Diodes FEATURES - Silicon zener diodes - Low profile surface-mount package - Zener and surge current specification - Low leakage current - Excellent stability - Moisture sensitivity level: level 1, per J-STD-020

TS9015CX5

Abstract: SOT-25 rf
Contextual Info: TS9015 650mA CMOS LDO 0.9V Adjustable Voltage with Enable Function SOT-25 Pin Definition: 1. Input 2. Ground 3. Enable 4. Adjustable 5. Output General Description The TS9015 is a positive voltage linear regulator operate from +2.5V to +7V input supply, it is developed utilizing

6mbp75ra120 igbt

Abstract: ma 1050
Contextual Info: 6MBP75RA120 1200V / 75A 6 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · Compatible with existing IPM-N series packages · High performance and high reliability IGBT with overheating protection

trr125

Contextual Info: 6MBP150RA120 1200V / 150A 6 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

TSM6N50

Contextual Info: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 DPAK TO-251 (IPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.