TSB702100 Search Results

Contextual Info: HICROSEMI CORP/POWER 57E D bllSiSD 0QQGS43 t, • PTC 7733-/3 TSB702100 1 ?T C T TECHNOLOGY Power TVansistor Chip, NPN 2 A, 1000 V, tf = 35ns ■ Planar Epitaxial ■ Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils

5609 transistor

Abstract: 5609 TSB702100
Contextual Info: bl l S Ì S O □ □ □ □ ¿ b i 3ST 45E D PTC ilICROSEÍll C O R P / P O U E R TSB702100 Power Transistor Chip, NPN 2 A, 1000 V, tf = 35ns • Planar Epitaxial ■ C ontact M etallization: ■ Chip T hickness: 22 m ils Base and Emitter*Aluminum Collector A u or Ti/N i/Ag