TSAL6200 Search Results
TSAL6200 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TSAL6200 | Vishay | LED, INFRARED, GAAS, T-1 3/4 (TSAL6200) | Original | 585.11KB | 3 | ||
| TSAL6200 | Vishay Intertechnology | GaAs/GaAlAs IR Emitting Diode in phi 5 mm (T - 1.75) Package | Original | 113.9KB | 5 | ||
| TSAL6200 | Vishay Telefunken | GaAs-GaAlAs IR Emitting Diode in Deg 5 mm (T-1 ) Package | Original | 83.63KB | 5 |
TSAL6200 Price and Stock
Vishay Intertechnologies TSAL6200IR transmitter; 5mm; 940nm; blue-grey,transparent; 210mW; 17°; THT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL6200 | 2,731 | 1 |
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TSAL6200 | 98,439 | 57 |
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| TSAL6200 | 2,731 | 447 |
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TSAL6200 | Bulk | 3,000 | 18 Weeks | 4,000 |
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| TSAL6200 | Bulk | 1 |
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TSAL6200 | 54,926 |
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TSAL6200 | 98,448 | 18 Weeks | 1 |
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| TSAL6200 | 2 | 18 Weeks | 1 |
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TSAL6200 | Bulk | 24,593 | 5 |
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| TSAL6200 | Bulk | 493 | 1 |
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TSAL6200 | Bulk | 4,000 |
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TSAL6200 | Bulk | 18 Weeks | 4,000 |
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TSAL6200 | 110 | 1 |
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TSAL6200 | 1,186 |
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| TSAL6200 | 233 |
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| TSAL6200 | 88 |
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TSAL6200 | 10,000 |
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TSAL6200 | 20 Weeks | 4,000 |
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TSAL6200 | 19 Weeks | 4,000 |
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Vishay Intertechnologies TSAL6200-ES21IR transmitter; 5mm; 940nm; blue-grey; 72mW; 17°; 1.35÷1.6VDC; THT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL6200-ES21 | 1,226 | 2 |
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TSAL6200-ES21 | 1,226 | 265 |
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TSAL6200-ES21 | Bulk | 18 Weeks | 5,000 |
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TSAL6200-ES21 | 19 Weeks | 1,000 |
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Vishay Intertechnologies TSAL6200-ASZIR EMITTER HIGH POWR 950NM 5MM 17DEG-e3 - Bulk (Alt: TSAL6200-ASZ) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL6200-ASZ | Bulk | 18 Weeks | 5,000 |
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TSAL6200-ASZ | 2,388 |
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TSAL6200-ASZ | 19 Weeks | 1,000 |
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TSAL6200-ASZ | 421 |
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Vishay Intertechnologies TSAL6200-MS12Z- Bulk (Alt: TSAL6200-MS12Z) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL6200-MS12Z | Bulk | 18 Weeks | 5,000 |
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TSAL6200-MS12Z | 2,000 | 19 Weeks | 1,000 |
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Vishay Intertechnologies TSAL6200-KSZIR EMITTER HIGH POWR 950NM 5MM 17DEG-e3 - Bulk (Alt: TSAL6200-KSZ) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSAL6200-KSZ | Bulk | 5,000 |
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TSAL6200-KSZ | 19 Weeks | 1,000 |
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TSAL6200 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TSAL6200Contextual Info: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity |
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tsal62002002/95/ec2002/96/ec11-mar-11 | |
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Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
tsal62002002/95/ec2002/96/ec2011/65/eu+2 | |
diode chn 940
Abstract: chn 940 CT-98
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OCR Scan |
tsal6200l6200d-74025ct-98+2 | |
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Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
tsal62002002/95/ec2002/96/ec11-mar-11 | |
TSAL6200Contextual Info: TSAL6200 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
tsal6200d-7402520-may-99 | |
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Contextual Info: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
tsal6200d-7402524-jun-03 | |
TSAL6200Contextual Info: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
tsal6200d-7402511-may-04 | |
21211Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
tsal62002002/95/ec2002/96/ec2011/65/eu+2 | |
TSAL6200Contextual Info: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
tsal6200d-7402520-may-99 | |
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Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
tsal62002002/95/ec2002/96/ec2011/65/eu+1 | |
TSAL6200
Abstract: infrared emitters and detectors data book temic
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Original |
tsal6200d-7402504-nov-97infrared emitters and detectors data book temic | |
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Contextual Info: TSAL6200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
tsal620008-apr-05 | |
TSAL6200Contextual Info: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
tsal6200d-7402520-may-99 | |
TSAL6200Contextual Info: TSAL6200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
tsal6200d-7402501-oct-04 | |
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TSAL6200Contextual Info: TSAL6200 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
tsal6200d-7402520-may-99 | |
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Contextual Info: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs |
Original |
tsal6200d-7402520-may-99 | |
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Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power |
Original |
tsal62002002/95/ec2011/65/eujs709a+1 | |
TSAL6200Contextual Info: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
tsal620008-apr-05 | |
TSAL6200
Abstract: temic infrared
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OCR Scan |
tsal6200d-7402506-mar-98temic infrared | |
TSAL6200Contextual Info: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
tsal6200d-7402511-may-04 | |
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Contextual Info: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. |
Original |
tsal6200d-7402523-jun-04 | |
TSAL6200
Abstract: J-STD-051
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Original |
tsal62002002/95/ec2002/96/ec18-jul-08+1 | |
TSOP75538
Abstract: 72hours 82495
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Original |
tsop753tsop7552011/65/eu2002/95/ec+4 | |
TSOP343
Abstract: TSOP34338 TSOP32138
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tsop321tsop323tsop325tsop341+4 | |