TRIAC 12F Search Results

CQDD-12M

Abstract: CQDD-12N
Contextual Info: CQDD-12M CQDD-12N SURFACE MOUNT 12 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-12M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering

CQDD-16M

Contextual Info: CQDD-16M CQDD-16N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 16 AMP SILICON TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-16M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering

Contextual Info: CQDD-8M CQDD-8N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 8 AMP SILICON TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-8M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering

TRIAC 8 Amp 800

Contextual Info: CQDD-8M CQDD-8N SURFACE MOUNT 8 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-8M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering

CQ89-2M

Abstract: CQ89-2N
Contextual Info: CQ89-2M CQ89-2N SURFACE MOUNT 2 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ89-2M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering

CQDD-16M

Abstract: CQDD-16N
Contextual Info: CQDD-16M CQDD-16N SURFACE MOUNT 16 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-16M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering

Contextual Info: CQDD-25M CQDD-25N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 25 AMP SILICON TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-25M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering

marking 4n

Abstract: 10 amp triac
Contextual Info: CQD-4M CQD-4N SURFACE MOUNT 4 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQD-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering

CQDD-25M

Abstract: CQDD-25N
Contextual Info: CQDD-25M CQDD-25N SURFACE MOUNT 25 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-25M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering

Contextual Info: CQDD-12M CQDD-12N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 12 AMP SILICON TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-12M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering

Contextual Info: CQ89-2M CQ89-2N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 2 AMP SILICON TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ89-2M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering

marking 4n

Abstract: CQ223-4M CQ223-4N TRIAC 60A WA200
Contextual Info: CQ223-4M CQ223-4N SURFACE MOUNT 4 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in

Contextual Info: CQ223-4M CQ223-4N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 4 AMP SILICON TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in

AC12F

Abstract: AC12FG NEC AC12 AC12DGM AC12EGM AC12FGM AC12D
Contextual Info: NEC ELECTRON DEVICE T R IA C S A C 1 2 D G M to A C 1 2 F G M 12 A MOLD TRIAC The AC12DGM to AC12FGM are all diffused mold type triac granted PACKAGE DIMENSIONS 10.5 MAX. RMS On-state current 12 Amps, w ith rated voltages up to 600 volts. U n it: m m 4.8 MAX.

Contextual Info: Preliminary Datasheet BCR2PM-12RE R07DS1239EJ0200 Previous: REJ03G1468-0100 Rev.2.00 Dec 24, 2014 600V - 2A - Triac Low Power Use Features • Insulated Type • Planar Passivation Type • The product guaranteed maximum junction temperature 150°C. • IT (RMS) : 2 A

Triac 12F

Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0 h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

BCR12PM

Contextual Info: Preliminary Datasheet BCR12PM-12LC R07DS1242EJ0400 Previous: REJ03G1261-0300 Rev.4.00 Dec 24, 2014 600V – 12A - Triac Medium Power Use Features • • • • • The product guaranteed maximum junction temperature 150°C. • Insulated Type • Planar Passivation Type

BCR6CM-12RA

Contextual Info: Preliminary Datasheet BCR6CM-12RA R07DS1150EJ0100 Rev.1.00 Jan 24, 2014 600V - 6A - Triac Medium Power Use Features • IT RMS : 6 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline

Contextual Info: Preliminary Datasheet BCR08DS-14A R07DS0258EJ0300 Rev.3.00 Dec 01, 2014 700V-0.8A-Triac Low Power Use Features • Planar Passivation Type • Surface Mounted Type • Completed Pb Free • IT RMS : 0.8 A • VDRM :700 V • IFGTI, IRGTI, IRGTIII : 5 mA

Contextual Info: Preliminary Datasheet BCR25CM-12LB R07DS1152EJ0100 Rev.1.00 Jan 29, 2014 600V - 25A - Triac Medium Power Use Features • IT RMS : 25 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 50 mA • Tj: 150 °C • Planar Passivation Type • Non-Insulated Type

BCR08AM-14A

Contextual Info: Preliminary Datasheet BCR08AM-14A R07DS1226EJ0300 Rev.3.00 Jul 31, 2014 700V-0.8A-Triac Low Power Use Features • IT RMS : 0.8 A • VDRM :700 V • IFGTI, IRGTI, IRGTIII : 5 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A

Contextual Info: Preliminary Datasheet BCR1AM-12A R07DS0177EJ0400 Rev.4.00 Jul 31, 2014 600V-1A-Triac Low Power Use Features • IT RMS : 1 A • VDRM : 600 V • IFGTI , IRGTI, IRGT III : 7 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A

BCR20CM-12LB

Contextual Info: Preliminary Datasheet BCR20CM-12LB R07DS1151EJ0100 Rev.1.00 Jan 29, 2014 600V - 20A - Triac Medium Power Use Features • IT RMS : 20 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III :30 mA(20mA) Note6 • Tj: 150 °C • Planar Passivation Type • Non-Insulated Type

Contextual Info: Preliminary Datasheet BCR5CM-12RA R07DS1149EJ0100 Rev.1.00 Jan 23, 2014 600V - 5A - Triac Medium Power Use Features • IT RMS : 5 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 15 mA (10 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline