TRANSISTORS AIO 20 Search Results

Contextual Info: September 1990 Edition 1.0 DATA SHEET MB82B88-15/-20 256K-BIT HIGH-SPEED BiCMOS SRAM 32K Words x 8 Bits BiCMOS High-Speed Static Random Access Memory The Fujitsu M B82B88 is a high-speed static random access memory organized as 32,768 words x 8 bits and fabricated with C M O S technology. B iC M O S technology is

transistors aio 20

Contextual Info: September 1990 Edition 1.0 FUJITSU DATA SHEET MB82B88-15/-20 256K-BIT HIGH-SPEED BiCMOS SRAM 32K Words x 8 Bits BiCMOS High-Speed Static Random Access Memory The Fujitsu MB82B88 is a high-speed static random access memory organized as 32,768 words x 8 bits and fabricated with CMOS technology. BiCMOS technology is

2SC3610

Contextual Info: Power T ransistors 2SC3610 2SC3610 Silicon NPN Epitaxial Planar Type Package Dimensions Video Amplifier U nit ! mm • Features 10.5 ± 0.5 • High transition frequency fT S 4.8max. +—h 9.8max. 1.5max. • Small collector output capacitance (C*) iS +i

2n6520

Abstract: 2N6517 2N6515 2N6517 MOTOROLA 2N6519 transistors aio 20
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N6517 PNP 2N 6519 2N652Ö PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage 2N6515 2N6517 2N6520 2N6519 v CEO 250 300 350 Vdc Collector-Base Voltage VCBO

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

dta143

Contextual Info: Transistors Digital transistors built-in resistors DTA143 EE/DTA143 EUA/DTA143 EKA/ DTA143 ECA/DTA143 ESA •F eatu re s 1) Built-in bias resistors en a b le th e configuration of an inverter circuit without connecting external input resistors (see the equivalent cir­

Dionics DI 297N

Contextual Info: Ï53f •SP D MONOLITHIC DIONICS INC. 65 R U S H M O R E ST., W E S T B U R Y , N .Y . 115 90 P 5 1 6 9 9 7 -7 4 7 4 DI 257P HIGH VOLTAGE DI 267N DI 267P DI 277N DI 277P CONSTANT CURRENT 7 SEGMENT DISPLAY DRIVERS DI 287N DI 287P DI 297N DI 297P 006925 DI 257N

DI297N

Abstract: seven transistors PNP drivers
Contextual Info: D MONOLITHIC DIONICS INC. 65 R U S H M O R E S T ., W E S T B U R Y , N .Y . 11590 516 9 9 7 -74 7 4 HIGH VOLTAGE CONSTANT CURRENT 7 SEGMENT DISPLAY DRIVERS 1 I! DI 257N DI 257P DI 267N DI 267P DI 277N DI 277P DI 287N DI 287P DI 297N DI 297P C IR C U IT DIAGRAMS

MHQ2907

Abstract: MPQ2907 MHQ2906 A040 2N2906 2N2907 MPQ2906 MH02906
Contextual Info: MHQ2906, MHQ2907 SILICON MPQ2906, MPQ2907 QUAD DUAL-IN-LINE PNP SILICON ANNULAR GENERAL-PURPOSE TRANSISTORS QUAD DUAL-IN-LINE PNP SILICON GENERAL-PURPOSE TRANSISTORS . . . designed for general-purpose switching circuits and OC to V H F am plifier applications.

Contextual Info: DA6001 Rev. 1.4  December 22, 2009 Data Sheet HIGHLY INTEGRATED POWER AND CLOCK SUPPLY IC FOR NEW GENERATION INTEL ATOM PROCESSOR PLATFORM Integrated power management sourcing Dialog Semiconductor’s new DA6001 with a single supply voltage the device provides, low noise

xr1094

Abstract: FIVE band graphic equalizer 261G6 capacitor 106 16K XR1094CP gph-17 xr-1094
Contextual Info: XR-1094 X 'E X A R Advanced Information Five Band Graphic Equalizer Filter and Display Driver PIN ASSIGNMENT GENERAL INFORMATION A1 The XR-1094 is a single chip graphic equalizer and display driver containing switched-capacitor band­ pass filters, filter multiplexer, data latches and high

Contextual Info: September 1990 Edition 1.0 FUJITSU DATA SHEET MB82B201-25/-35 4M-BIT HIGH-SPEED BiCMOS SRAM 4M-Bit xl or x4 Configurable BiCMOS High-Speed Static Random Access Memory The Fujitsu MB82B201 is a 4M-bit high speed static random access memory fabricated with CMOS technology. The memory organization of MB82B201 can be

MB81C84

Contextual Info: < p ^ July 1 99 0 Edition 1.0 FUJITSU DATA S H E E T M B82B84-15/-20 CMOS 256K-BIT HIGH-SPEED BiCMOS SRAM 64K Words x 4 Bits BiCMOS High-Speed Static Random Access Memory with Automatic Power Down The Fujitsu MB82B84 is a 65,536 words x 4 bits static random access memory

Contextual Info: TS281-A89Z Decem ber 1989 FUJITSU DATA SHEET MB82B81-15/-20 256K BIT HIGH SPEED BI-CMOS SRAM 262,144-WORD x 1-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B81 is a 65,536 words by 1 bits static random access memory fabricated with a CMOS silicon gate process. To make power dissipation lower and high speed, peripheral

STDC2150

Contextual Info: STDC2150 PRODUCT BRIEF A COMPLETE CONTROLLER SOLUTION FOR INKJET PHOTO ALL-IN-ONES SIGMATEL, A LEADER IN MIXED-SIGNAL, MULTIMEDIA SEMICONDUCTORS, OFFERS COMPLETE SYSTEM ON CHIP SOC SOLUTIONS FOR THE MULTI-FUNCTION PRINTER (MFP) MARKET. SigmaTel MFP solutions offer the highest level of

UDN5703A

Abstract: UDN-5703A UDN5706A ON60
Contextual Info: 5703 5706 AND QUAD 2-INPUT PERIPHERAL/POWER DRIVERS —TRANSIENT-PROTECTED OUTPUTS These 16-lead quad 2-input peripheral/power drivers are bipolar monolithic integrated circuits containing AND or OR logic gates, highcurrent switching transistors, and transient-suppression diodes

MC 151 pnp

Abstract: 05Z5 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4698 2N4900
Contextual Info: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) « 40-425V PNP Power Transistors NFN Typ* No. comptait«»! 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N4898 2N4699 2N4900 2N5344 2N3767 2N4910 2N4911 2N4912 VCE(SAT) 0IC/IB (V0A/A) VCEO <»»>

Contextual Info: FUJITSU TS268-B893 March 1989 256K-BIT 65,536 x 4 Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB82B84 is a 65,536-words by 4-bits static random access memory fabricated with a CMOS silicon gate process. To make power dissipation lower and high

006 50001 transistor

Abstract: 100MHZ DTA114E SC-75A T148
Contextual Info: Transistors Digital transistor Common Emitter Dual Transistors UMA9N/FMA9A • E x t e r n a l d im e n s io n s (Units: m m ) •F e a tu re s 1) T w o D T A 1 1 4 E in U M T a n d S M T U M A 9N packages. 2) FM A 9A 0 .9 + 0.1 2.9±0.2 1.9+0.2 V .f 10.95 0.95

D7722

Contextual Info: FUJITSU MICROELECTRONICS 37417 b 2 O O D 7722 1 • 53E D T-%-z%os TSS80-A89Z December 1989 FufíTSU DATA SHEET ■ MB 82B 71-15/-20 64KBIT HIGH SPEED BI-CMOS SRAM 65,536-WORD x 1-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY Tlio Fujitsu M882B71 is a 65,536 words by 1 bits static random access memory fabricated with a

Contextual Info: FuflTSU July 1990 Edition 1.0 DATA SHEET MB82B84-15/-20 CMOS 256K-BIT HIGH-SPEED BiCMOS SRAM 64K Words x 4 Bits BiCMOS High-Speed Static Random Access Memory with Automatic Power Down The Fujitsu MB82B84 is a 65,536 w ords x 4 bits static random access memory

Contextual Info: BURR-BROQJN CORP 11E D | l 7313bS o o m o m XTR101 BURR-BROW N I B 3 I B A V A IL A B L E IN DIE FORM Precision, Low Drift 4mA to 20mA TWO-WIRE TRANSMITTER FEATURES APPLICATIONS • IN S TRU M ENTATION A M P LIF IE R IN PU T Low Offset Voltage, 30¡N max

Contextual Info: November 1993 Editbn 2.0 FUJITSU DATA SHEET MB82009-20/-25 CMOS 1M-BIT HIGH SPEED SRAM 131,072-WORD x 9-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82009 is 131,072-word x 9-bit high speed static random access memory fabricated with CMOS technology.

Contextual Info: International S R ectffier Preliminary Data Sheet No. PD-9.1332 IRHM7260 IRHM8260 REPETITIVE AVALANCHE ANO dv/dt RATED HEXFET TRANSISTOR N -C H A N N E L M EGA RAD HARD 200Volt, 0.070ft, MEGA RAD HARD HEXFET International Rectifier’s RAD H ARD technology