TRANSISTORS 6822 Search Results

mrf5s19060nr1

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with

A113

Abstract: A114 A115 AN1955 C101 JESD22 MRF5S19060N MRF5S19060NBR1 MRF5S19060NR1 MRF5S19060NB
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with

12065G105AT2A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with

MRF7S18125

Abstract: J281 MRF7 Z9.1 A114 A115 AN1955 C101 JESD22 RF35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125AH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125AHR3 MRF7S18125AHSR3 Designed for GSM and GSM EDGE base station applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125AH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125AHR3 MRF7S18125AHSR3 Designed for GSM and GSM EDGE base station applications with

12065G105AT2A

Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with

2N3501U4

Abstract: 2N3499U4
Contextual Info: 2N3498U4 thru 2N3501U4 Qualified Levels: JAN, JANTX, and JANTXV NPN SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/366 DESCRIPTION This family of 2N3498U4 through 2N3501U4 epitaxial planar transistors are military qualified

SKM200GB122D

Abstract: skm 191 semikron SKHI 22 AR semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKHI 21 AR SKM300GB123D 062d skm 200 123d transistor SKM200GB101D
Contextual Info: 6. SEMITRANS IGBT Module Insulated Gate Bipolar Transistors Merkmale Typische Anwendungen • MOS-Eingang (spannungsgesteuert) • Motorsteuerung Drehstromantriebsumrichter • N-Kanal • Gleichstrom-Servo- und Roboter-Antriebe • Reihe mit niedriger Sättigungsspannung erhältlich

Contextual Info: 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are

DD 127 D transistor

Abstract: T4-LDS-0101-1
Contextual Info: 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are

DD 127 D transistor

Contextual Info: 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are

cc 3053

Abstract: 2N3440U4
Contextual Info: 2N3439U4 thru 2N3440U4 Compliant NPN LOW POWER SILICON TRANSISTOR Qualified Levels: JAN, JANTX, JANTXV and JANS* Qualified per MIL-PRF-19500/368 *2N3440U4 only DESCRIPTION This family of 2N3439U4 through 2N3440U4 high-frequency, epitaxial planar transistors

Contextual Info: 2N3506L thru 2N3507AL Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature

2N3507 equivalent

Abstract: 2N3506 2N3507
Contextual Info: 2N3506 thru 2N3507A Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature

2N3440UA

Contextual Info: 2N3439UA thru 2N3440UA Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of 2N3439UA through 2N3440UA high-frequency, epitaxial planar transistors

Contextual Info: 2N3506L thru 2N3507AL Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature

2N3439 JANS

Contextual Info: 2N3439UA thru 2N3440UA Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of 2N3439UA through 2N3440UA high-frequency, epitaxial planar transistors

Contextual Info: 2N3418U4 thru 2N3421U4 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The

2N3421

Abstract: 2N3420 JANTXV 2N3421 equivalent 2N3419
Contextual Info: 2N3418 thru 2N3421 Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These

Contextual Info: 2N3439L thru 2N3440L Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage.

2n3501ub

Abstract: microsemi ub package tape reel jans2n3501ub
Contextual Info: JANS 2N3501UB Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR compliant Qualified per MIL-PRF-19500/366 DESCRIPTION This family of JANS 2N3501, epitaxial, planar transistors are military qualified in five RHA

Contextual Info: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial

2N3419

Contextual Info: 2N3418 thru 2N3421 Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These

2n3440 equivalent

Abstract: JAN 2N3439 UA 2N3439 JANTX
Contextual Info: 2N3439 thru 2N3440 Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage.