TRANSISTORS 5A1 8 Search Results
TRANSISTORS 5A1 8 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
2SC6026MFV |
![]() |
NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
![]() |
NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
![]() |
PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
![]() |
PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
![]() |
NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
TRANSISTORS 5A1 8 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor M M PQ3725 NPN Silicon JV I a si M otorola Preferred Device JV I 5a1 i II ir v z i 5 Q E H iv= a 3 1 CASE 751B -05, STYLE 4 S O -16 MAXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-E m itter Voltage |
OCR Scan |
PQ3725 | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC807-16LT1 BC807-25LT1 BC807-40LT1 TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR W (Tamb=25℃) A -50 V 0. 95 0. 4 -0.5 0. 95 2. 4 1. 3 1. 9 Collector current |
Original |
OT-23 BC807-16LT1 BC807-25LT1 BC807-40LT1 OT-23 -100mA -500mA, -50mA BC807-16LT1 BC807-25LT1 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification. |
Original |
LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE 2. EMITTER 1.0 3. COLLECTOR W(Tamb=25℃) 2.4 1.3 V 0.95 A 0.4 1.9 FEATURES Power dissipation PCM : 0.3 Collector current |
Original |
OT-23 BC807-16LT1 BC807-25LT1 BC807-40LT1 BC807-25LT1 BC807-40LT1 037TPY 950TPY 550REF | |
Contextual Info: BC807-16 BC807-25 BC807-40 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A Collector-base Voltage 50V |
Original |
BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202, | |
Contextual Info: : S v î^ S e m i ; SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR BC807 -16LT1 BC807 -25LT1 BC8 0 7 -40LT1 TRANSISTOR SOT — 23 1. BASE 2. EMI H E R 3. COLLECTOR FEATURES Power dissipation 0.3 Pcm Collector current 1 cm : PNP W -0 .5 (Tamb=25 °C) |
OCR Scan |
BC807 -16LT1 -25LT1 -40LT1 -10mA OT-23 950TPY 037TPY 550REF | |
marking 5a1 sot23Contextual Info: MCC BC807-16 BC807-25 BC807-40 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A |
Original |
BC807-16 BC807-25 BC807-40 OT-23 -55OC OT-23 MIL-STD-202, BC807-40 marking 5a1 sot23 | |
Contextual Info: MCC BC807-16 BC807-25 BC807-40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A |
Original |
BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202, | |
BC807-40/5CContextual Info: MCC BC807-16 BC807-25 BC807-40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A |
Original |
BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202, BC807-40/5C | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification. |
Original |
LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. |
Original |
LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G LBC807 AEC-Q101 | |
LBC80725LT1GContextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. |
Original |
LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G LBC807 AEC-Q101 3000/Tape LBC80725LT1G | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification. |
Original |
LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 AEC-Q101 S-LBC807-16LT1G LBC807-16LT3G S-LBC807-16LT3G | |
BC807-40Contextual Info: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. |
Original |
BC807-16 BC807-25 BC807-40 OT-23 -55OC OT-23 MIL-STD-202, BC807-40 | |
|
|||
BC807-40Contextual Info: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. |
Original |
BC807-16 BC807-25 BC807-40 OT-23 -55OC OT-23 MIL-STD-202, BC807-40 | |
Contextual Info: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • PNP Silicon General Purpose Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates |
Original |
BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202 | |
Contextual Info: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • PNP Silicon General Purpose Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates |
Original |
BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202, | |
Transistors 5A1 8
Abstract: SBC80-16L marking 5a1 5B1 SOT-23 BC807 5C
|
Original |
BC807-16L, SBC80716L BC807-25L, SBC80725L, BC807-40L, SBC807-40L AEC-Q101 OT-23 BC807-16LT1/D Transistors 5A1 8 SBC80-16L marking 5a1 5B1 SOT-23 BC807 5C | |
Contextual Info: BC807-16L, SBC80716L BC807-25L, SBC80725L, BC807-40L, SBC807-40L General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique |
Original |
BC807-16L, SBC807 BC807-25L, BC807-40L, SBC807-40L BC807â 16LT1/D | |
BC807-40LT1G
Abstract: BC807 BC807-16LT1G BC807-25LT1G
|
Original |
BC807-16LT1G, BC807-25LT1G, BC807-40LT1G BC807-16LT1/D BC807-40LT1G BC807 BC807-16LT1G BC807-25LT1G | |
marking 5b1
Abstract: On semiconductor date Code sot-23 BC807 BC80740LT1G 5B1 SOT-23 BC807-1 sot-23 Marking B1
|
Original |
BC807-16LT1, BC807-25LT1, BC807-40LT1 BC807-16LT1/D marking 5b1 On semiconductor date Code sot-23 BC807 BC80740LT1G 5B1 SOT-23 BC807-1 sot-23 Marking B1 | |
marking code 5b1
Abstract: 5B1 SOT-23 BC807 5c sot-23 sot-23 Marking B1 marking b1 sot-23
|
Original |
BC807-16LT1, BC807-25LT1, BC807-40LT1 BC807-16LT1/D marking code 5b1 5B1 SOT-23 BC807 5c sot-23 sot-23 Marking B1 marking b1 sot-23 | |
BC807-40LT1G equivalent
Abstract: bc807 BC807-16LT1G BC807-25LT1G BC807-40LT1G BC80740LT1G 5B1 SOT-23
|
Original |
BC807-16LT1G, BC807-25LT1G, BC807-40LT1G BC807-16LT1/D BC807-40LT1G equivalent bc807 BC807-16LT1G BC807-25LT1G BC807-40LT1G BC80740LT1G 5B1 SOT-23 | |
marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
|
Original |
1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p |