TRANSISTOR-9013 H Search Results

transistor BR 9013

Abstract: transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor BR 9013

Abstract: BR 9013 transistor 9012 data sheet NPN 9013 9013 transistor 9013 npn transistor datasheet transistor 9013 data sheet transistor 9012 transistor c 9013 9013 npn
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor BR 9013

Abstract: transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor c 9013

Abstract: transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor BR 9013

Abstract: NPN 9013 transistor c 9013 9013 npn transistor br 9013 transistor 9012 9013 9013 transistor Transistor 9013 9013 pnp transistor npn c 9013
Contextual Info: HN 9013 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type

NPN 9013

Abstract: transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

9013 npn transistor

Abstract: 9012 Unisonic
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1  FEATURES TO-92 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity.

9013 npn

Abstract: NPN 9013 transistor c 9013 9013 npn transistor 9013G C 9013 transistor transistor 9013 9013 NPN Output Transistor IC 9013 transistor 9013 H NPN
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES 1 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012

9013 transistor

Abstract: Transistor-9013 h UTC 9013 9013 NPN Transistor
Contextual Info: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER

9012 Unisonic

Contextual Info: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER

Contextual Info: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER

9012 pnp

Abstract: UTC 9013 9012 transistor data sheet transistor 9012 Transistor 9012 G PNP 9012 transistor c 9012 9012 pnp transistor 9013 transistor Transistor 9013
Contextual Info: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER

UTC 9013

Abstract: 9013 NPN data sheet NPN 9013 transistor c 9013 9013 npn transistor NPN SILICON TRANSISTOR 9013 UTC9013 NPN 9013 PDF DATA SHEET 9013npn 9012 Unisonic
Contextual Info: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER

pin configuration NPN transistor cs 9013

Abstract: 9013 sot-23 9013 SMD pin configuration NPN transistor 9013 npn SMD 9013 NPN Transistor transistor smd marking BA sot-23 transistor cs 9013 TRANSISTOR SMD 9013 9013 SMD TRANSISTOR 9013 pin details
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT 9013 SOT-23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage

TRANSISTOR SMD 9013

Abstract: equivalent of transistor 9013 9013 SMD CMBT9013
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT 9013 SOT-23 PIN CONFIGURATION N PN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

Contextual Info: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total pow er dissipation. PT=625mW High C ollector Current. (Ic= -500m A) C om plem entary to S S 9013 Excellent hpE linearity.

9013 smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT 9013 SOT-23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

SMD 9013 NPN Transistor

Abstract: 9013 sot-23 TRANSISTOR SMD 9013 9013 transistor sot-23 pin configuration NPN transistor 9013 npn 9013 SMD 9013 SMD TRANSISTOR pin configuration NPN transistor cs 9013 9013 npn transistor smd 9013 sot23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT 9013 SOT-23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

9013 NPN Output Transistor

Abstract: transistor c 9013 transistor cs 9012 transistor cs 9013
Contextual Info: UNISONICTECHNOLOGIESCO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1 W OU T PU T AM PLI FI ER OF POT ABLE RADI OS I N CLASS B PU SH -PU LL OPERAT I ON ̈ 1 FEAT U RES * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity.

diode st 4148

Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
Contextual Info: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)

9011 9012 9013 9014 9018

Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
Contextual Info: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER

JE9013

Abstract: JE9012 92PA3
Contextual Info: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE JE9013 DESCRIPTION The JE 9013 is designed fo r use in 1 W o u tp u t a m p lifie r o f PACKAGE DIMENSIONS portable radios in class B push-pull operation. in m illim e te rs inches 5.2 MAX. (0.204 MAX.! FEATURES

Transistor 9013

Abstract: Transistor-9013 h transistor BR 9013 BR 9013 datasheet transistor 9013
Contextual Info: NPN SILICON TRANSISTOR 9013 TO 92 FEATURES 特 1.EMITTER 征 发 射 极 Power dissipation 最大耗散功率 PCM : 0.625 W Collector current ICM : 基 极 Tamb=25 3.COLLECTOR 最大集电极电流 0.5 电 极 1 2 3 集电极-基极击穿电压 V BR CBO : 45

Transistor 9013

Abstract: H9013 C047BJ-00 8050S SS9013 SS9013H90138050S NPN SILICON TRANSISTOR 9013
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 9013 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C047BJ-00 芯片厚度：240±20µm 管芯尺寸：470x470µm2 焊位尺寸：B 极 103×103µm2，E 极 98×98µm2