TRANSISTOR ZO 607 Search Results

Contextual Info: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the

MHW1345

Abstract: catv amplifier Amplifier Modules motorola MHW7185CL FUJI GaAs FET CATV amplifier module transistor HATTELAND mhw6342t 85690 TRANSISTOR C 6090
Contextual Info: Device Data Book CATV DISTRIBUTION AMPLIFIER MODULE DEVICE DATA DL209/D Rev. 0 10/2002 CATV Distribution Amplifier Module Device Data Table of Contents Page Foreword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii Data Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . iii

transistor zo 607

Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
Contextual Info: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the

NEC JAPAN 237 521 02

Abstract: transistor zo 607 2SC5004
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

TD2400

Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

NEC NF 932

Abstract: ZO 103 MA 75 623 2SC5009 2SC5009-T1 TD-2430 power transistor 3055
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6± 0.1 0.8± 0.1 dynamic range and excellent linearity. This is achieved by direct nitride

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NEC JAPAN 237 521 02

Abstract: nec 237 521 02 transistor zo 607 2SC5004
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SC5007

Abstract: 2SC5007-T1
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NEC 1357

Abstract: LA 8873 TRANSISTOR C 4460
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the

transistor NEC B 617

Abstract: nec. 5.5 473
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

2SC5009

Abstract: 2SC5009-T1
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

CI 74381

Abstract: X009
Contextual Info: 6N1135/ 6N1136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Features • • • • • • • • Isolation Test Voltage: 5300 VRMS Operating Temperature from -55 °C to +110 °C TTL Compatible

SFH613

Contextual Info: SFH6135/ SFH6136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output Features • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-mode Interference Immunity Bandwidth 2.0 MHz

SFH6135

Abstract: SFH6136 VDE0884 DIN 268
Contextual Info: SFH6135/ SFH6136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output Features • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-mode Interference Immunity Bandwidth 2.0 MHz

SFH6135

Abstract: SFH6136 VDE0884
Contextual Info: SFH6135/ SFH6136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output Features • • • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-mode Interference Immunity Bandwidth 2.0 MHz

SFH6135

Contextual Info: SFH6135/ SFH6136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output Features • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-mode Interference Immunity Bandwidth 2.0 MHz

6N136-X007

Abstract: optocoupler 6n136 6N135-X007 k6n135 6N135 6N136 6N136-X006 VDE0884 ic 6n136
Contextual Info: 6N135/ 6N136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output Features • • • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-Mode Interference Immunity

6N135

Abstract: 6N135-X007 6N136 6N136-X006 6N136-X007 6N136-X009 VDE0884
Contextual Info: 6N135/ 6N136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output Features • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-Mode Interference Immunity

SFH163

Abstract: SFH6135 SFH6136 VDE0884
Contextual Info: SFH6135/ SFH6136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output Features • • • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-mode Interference Immunity Bandwidth 2.0 MHz

K6N135

Abstract: 83604 6N135 6N136 VDE0884 6n136 smd 6N136 IC
Contextual Info: 6N135/ 6N136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output Features • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-Mode Interference Immunity

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions