TRANSISTOR Z SS Search Results

2SC2879

Abstract: toshiba 2sc2879 2SC2879A 2sc2879 equivalent
Contextual Info: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SB624

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.

2SK1282

Abstract: A 1282 transistor TC-2381 MEI-1202 TEA-1035
Contextual Info: DATA SHEET NEC J MOS FIELD EFFECT POWER TRANSISTOR 2SK1282,1282-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1282/1282-Z is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT3904 DUAL TRANSISTOR（NPN） SOT-363 S SS S FEATURES z Epitaxial planar die construction z Ideal for low power amplification and switching MARKING:K6N 1 MAXIMUM RATINGS Ta=25℃ unless otherwise noted

PR240

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. f = 1.0 G H z * M AG 14 dB TYP. f = 1.0 G H z PACKAGE DIMENSIONS Units: mm 2 .8± 0.2 1.5 .0.65-0-5 ABSOLUTE MAXIMUM RATINGS (T a = 25 °C)

BLX14

Abstract: philips Fxc 3 b philips blx14 transistor EP 430 toroid LA Toroid International AB ES28 transistor application VCE28 neutralization push-pull
Contextual Info: m b5E D 711DöSb DQb3H50 430 • PHIN BLX14 PHILIPS INTERNATIONAL J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, A B and B operated transmitting equipment in the h.f. and v.h.f. band. • rated for 50 W P.E.P. at 1,6 M H z to 28 M H z

nec 3326

Abstract: Nec b 616 NF 948
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5181 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S2ie|2 = 10.5 dBTYP. @ V ce = 2 V , Ic = 7 mA, f = 2 G H z |Szie|2 = 9 .0 dB-rvp. @ V ce = 1 V, Ic = 5 mA, f = 2 G H z

transistor v2w

Abstract: transistor C 2240 TRANSISTOR 500 PL031 TT 2240
Contextual Info: =z -z-= = =- * =s .- -a a-= = = an AMP company RF MOSFET Power Transistor, 500 - 1000 MHz IOW, 28V LF281 OA Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor

toko 5c

Abstract: MCH18 MCR03 SPA-2318 TAJB106K020R SPA-2318Z
Contextual Info: SPA-2318 Z SPA-2318(Z) Low Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)

Contextual Info: RN2101~RN2106 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2101, RN2102, RN2103 RN2104, RN2105, RN2106 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Built-in bias resistors

2SK1954

Abstract: 2SK1954-Z MEI-1202 TEA-1035
Contextual Info: DATA SHEET ir NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1954, 2SK1954-Z » - M SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2S K1954 is N -channel M O S Field Effect Transistor in millimeters

MPT100

Contextual Info: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR _ 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3353 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3353 TO -220AB 2SK3353-S TO-262 2SK3353-Z

2SC4699K

Abstract: 2SC4700 T247 2SC4699 T106 T107 T146 T147 T246
Contextual Info: b ' 7 > i s Z £ /Transistors 2SC4699K/2SC4700 2SC 4699K 2SC 4700 Epitaxial Planer NPN Silicon Transistor M M Z 'f For High-Speed Switching • ÿH férl'ii 0/D im ensions Unit : mm 2SC4689K to ff= 2SC4700 2 .0 ± 0 ,Z 2 .9 ± 0 .2 22ns (Typ.) • I —0.1

M2SJ598

Abstract: 2SJ598 2SJ598-Z 2SJ598 equivalent
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES PART NUMBER PACKAGE 2SJ598 TO-251 2SJ598-Z

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1647,1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PACKAGE DRAWINGS Unit: mm DESCRIPTION 6.5 ±0.2 voltage. 5.0 ±0.2 0.5 ±0.1 2 3 1.1 ±0.2 • Available for high-current control in small dimension

k2415

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2S K2415 is N-Channel MOS Field Effect Transistor designed in m illim eters for high voltage switching applications.

2SK2415

Abstract: 2SK2415-Z IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2415 is N-Channel MOS Field Effect Transistor designed + 0.2 1.5 – 0.1 in millimeters for high voltage switching applications.

d1507

Abstract: 2SK3479 2SK3479-S 2SK3479-Z 2SK3479-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3479 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3479 TO-220AB 2SK3479-S TO-262 2SK3479-ZJ TO-263 2SK3479-Z TO-220SMDNote

ITE 8500

Abstract: transistor d 1302 2SK3510 2SK3510-S 2SK3510-Z 2SK3510-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3510 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3510 TO-220AB 2SK3510-S TO-262 2SK3510-ZJ TO-263 2SK3510-Z TO-220SMDNote

NEC J 302

Abstract: TC-7944 2SJ302 MEI-1202 TEA-1035
Contextual Info: DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2SJ302. 302-Z SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ302 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance

2SK3365

Abstract: 2SK3365-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3365 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3365 TO-251 2SK3365-Z TO-252 designed for DC/DC converters application of notebook

Contextual Info: Ordering number:ENN6291 NPN Epitaxial Planar Silicon Transistor 2SC5538 VHF to UHF OSC, High-Frequency Amplifier Applications Features Package Dimensions • High gain : | S21e 12= l0.5d B typ f=lG H z . • High cutoff frequency : fj=5.2G H z typ. • Ultrasmall, slim flat-lead package.