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    TRANSISTOR YB Search Results

    TRANSISTOR YB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    TRANSISTOR YB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    2SB1301

    Abstract: MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2S B 1301 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SB 1301 is designed for audio frequency pow er am plifier and switching application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


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    2SB1301 2SB1301 2SD1952 MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134 PDF

    2SC3617

    Abstract: IEI-1213 MEI-1202 MF-1134 TN3200
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2S C 3617 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2SC 3617 is designed fo r audio frequency power am plifier and switching application, especially in H ybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


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    2SC3617 2SC3617 IEI-1213 MEI-1202 MF-1134 TN3200 PDF

    sl-100 TRANSISTOR

    Abstract: SL 100 NPN Transistor MF-1134 NEC IR nec transistor selection guide 2SC3554 IEI-1213
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3554 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2S C 3554 is designed fo r high Voltage Switching application, especially in H ybrid Integrated Circuits. FEATURES PACAKAGE DIMENSIONS in millimeters • World Standard M iniature Package


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    2SC3554 -10mA sl-100 TRANSISTOR SL 100 NPN Transistor MF-1134 NEC IR nec transistor selection guide IEI-1213 PDF

    2SD1000

    Abstract: 2SB799 IEI-1213 MEI-1202 MF-1134 TC-5494A SOT-89 transistor marking LM
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1000 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD1000 is designed fo r audio frequency power am plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package


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    2SD1000 2SD1000 OT-89 2SB799 2SB799 IEI-1213 MEI-1202 MF-1134 TC-5494A SOT-89 transistor marking LM PDF

    Contextual Info: 729462 1 POWEREX INC Tfi DE | TSTMbSl O d F s BSS 0 | ' D fOUPIBt "^-33-35^ KT5m 05 Powerex, Inc., Hlllts Street, Ybungwood, Pennsylvania 1S697 412 925-7272 Split-Dual Darlington Transistor Module 50 Amperes/1200 Volts Description OUTLINE ORAWINQ Powerex Split-Dual Darlington Transistor


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    1S697 Amperes/1200 KT521205 PDF

    QM50DY-H

    Contextual Info: MITSUBISHI HYBRID ICs M57955L HYBRID IC FOR DRIVING HIGH BETA TRANSISTOR MODULES DESCRIPTION OUTLINE DRAWING M 57955L is a H ybrid Integrated C ircuit desig n ed for drivin g H igh Dim ensions in mm Beta Transistor M odules QM50DY-HB, etc., in an Inverter application.


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    M57955L 57955L QM50DY-HB, 2500Vrm QM50DY-H PDF

    diode t25 4 c6

    Abstract: 7421 transistor transistor k 4213 1S697 KT521205 KTS21205 T-33-35 KT-52
    Contextual Info: fOUPIBt 729462 1 POWEREX INC Tfi DE | TSTMbSl O d F s BSS 0 | ' D "^-33-35^ K T5m 05 Powerex, Inc., Hlllts Street, Ybungwood, Pennsylvania 1S697 412 925-7272 Split-Dual Darlington Transistor Module 50 Amperes/1200 Volts Description OUTLINE ORAWINQ Powerex Split-Dual Darlington Transistor


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    0DD23Ã KT521205 1S697 Amperes/1200 KT521205 diode t25 4 c6 7421 transistor transistor k 4213 1S697 KTS21205 T-33-35 KT-52 PDF

    BCY67

    Abstract: HTI 2E 101S Q62702-C254
    Contextual Info: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in


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    BCY67 BCY67 10ZkHz HTI 2E 101S Q62702-C254 PDF

    TRANSISTOR MARKING YB

    Abstract: RN1901FE RN1906FE RN2901FE RN2902FE RN2903FE RN2904FE RN2905FE RN2906FE
    Contextual Info: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2901FE, RN2902FE, RN2903FE RN2904FE, RN2905FE, RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •


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    RN2901FE RN2906FE RN2901FE, RN2902FE, RN2903FE RN2904FE, RN2905FE, RN1901FE RN1906FE TRANSISTOR MARKING YB RN1906FE RN2902FE RN2903FE RN2904FE RN2905FE RN2906FE PDF

    Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE, RN2702JE, RN2703JE RN2704JE, RN2705JE, RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • •


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    RN2701JE RN2706JE RN2701JE, RN2702JE, RN2703JE RN2704JE, RN2705JE, RN1701JE RN1706JE PDF

    transistor a017

    Contextual Info: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2901FE, RN2902FE, RN2903FE RN2904FE, RN2905FE, RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN2901FE RN2906FE RN2901FE, RN2902FE, RN2903FE RN2904FE, RN2905FE, RN1901FE RN1906FE transistor a017 PDF

    Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN2701JE RN2706JE RN2702JE RN2703JE RN2704JE RN2705JE RN1701JE RN1706JE PDF

    TRANSISTOR MARKING YB

    Abstract: RN2101FT RN1101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
    Contextual Info: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •


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    RN2101FT RN2106FT RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, RN1101FT 1106FT TRANSISTOR MARKING YB RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT PDF

    TRANSISTOR MARKING YB

    Abstract: RN1701JE RN1706JE RN2701JE RN2702JE RN2703JE RN2704JE RN2705JE RN2706JE
    Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN2701JE RN2706JE RN2702JE RN2703JE RN2704JE RN2705JE RN1701JE RN1706JE TRANSISTOR MARKING YB RN1706JE RN2703JE RN2706JE PDF

    TRANSISTOR MARKING YB

    Abstract: RN2101FT RN2103FT TOSHIBA Transistor Silicon PNP Epitaxial Type RN1101FT RN1106FT RN2102FT RN2104FT RN2105FT RN2106FT
    Contextual Info: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN2101FT RN2106FT RN2102FT RN2103FT RN2104FT RN2105FT RN1101FT RN1106FT TRANSISTOR MARKING YB RN2103FT TOSHIBA Transistor Silicon PNP Epitaxial Type RN1106FT RN2106FT PDF

    TRANSISTOR MARKING YB

    Abstract: RN1101FT RN1106FT RN2101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
    Contextual Info: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN2101FT RN2106FT RN2102FT RN2103FT RN2104FT RN2105FT RN1101FT RN1106FT TRANSISTOR MARKING YB RN1106FT RN2103FT RN2106FT PDF

    RN1901FE

    Abstract: RN1906FE RN2901FE RN2902FE RN2903FE RN2904FE RN2905FE RN2906FE TRANSISTOR MARKING YB
    Contextual Info: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2901FE,RN2902FE,RN2903FE RN2904FE,RN2905FE,RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN2901FE RN2906FE RN2902FE RN2903FE RN2904FE RN2905FE RN1901FE RN1906FE RN1906FE RN2903FE RN2906FE TRANSISTOR MARKING YB PDF

    TRANSISTOR MARKING YB

    Abstract: RN1701JE RN1706JE RN2701JE RN2702JE RN2703JE RN2704JE RN2705JE RN2706JE
    Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN2701JE RN2706JE RN2702JE RN2703JE RN2704JE RN2705JE RN1701JE RN1706JE TRANSISTOR MARKING YB RN1706JE RN2703JE RN2706JE PDF

    Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN2701JE RN2706JE RN2702JE RN2703JE RN2704JE RN2705JE RN1701JE RN1706JE PDF

    TRANSISTOR MARKING YB

    Contextual Info: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2901FE,RN2902FE,RN2903FE RN2904FE,RN2905FE,RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN2901FE RN2906FE RN2902FE RN2903FE RN2904FE RN2905FE RN1901FE RN1906FE TRANSISTOR MARKING YB PDF

    TRANSISTOR MARKING YB

    Abstract: RN1701JE RN1706JE RN2701JE RN2702JE RN2703JE RN2704JE RN2705JE RN2706JE
    Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm


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    RN2701JE RN2706JE RN2702JE RN2703JE RN2704JE RN2705JE RN1701JE RN1706JE TRANSISTOR MARKING YB RN1706JE RN2703JE RN2706JE PDF

    TRANSISTOR MARKING YB

    Contextual Info: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN2101FT RN2106FT RN2102FT RN2103FT RN2104FT RN2105FT RN1101FT RN1106FT TRANSISTOR MARKING YB PDF

    Contextual Info: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm


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    RN2101FT RN2106FT RN2102FT RN2103FT RN2104FT RN2105FT RN1101FT RN1106FT PDF