TRANSISTOR YB Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

2SB1301

Abstract: MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR 2S B 1301 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SB 1301 is designed for audio frequency pow er am plifier and switching application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

2SC3617

Abstract: IEI-1213 MEI-1202 MF-1134 TN3200
Contextual Info: DATA SHEET SILICON TRANSISTOR 2S C 3617 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2SC 3617 is designed fo r audio frequency power am plifier and switching application, especially in H ybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SB800 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIO N The 2SB800 is designed fo r audio frequency power a m plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE D IM ENSIONS

sl-100 TRANSISTOR

Abstract: SL 100 NPN Transistor MF-1134 NEC IR nec transistor selection guide 2SC3554 IEI-1213
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3554 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2S C 3554 is designed fo r high Voltage Switching application, especially in H ybrid Integrated Circuits. FEATURES PACAKAGE DIMENSIONS in millimeters • World Standard M iniature Package

2SD1000

Abstract: 2SB799 IEI-1213 MEI-1202 MF-1134 TC-5494A SOT-89 transistor marking LM
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1000 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD1000 is designed fo r audio frequency power am plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package

2SD1164

Abstract: CCS-32
Contextual Info: SILICON TRANSISTOR 2SD1164-Z NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR M P -3 DESCRIPTION 2SD1164-Z is designed fo r Low Frequency A m plifier and Switching, especially in H ybrid Integrated Circuits. FEATURE PACKAGE DIMENSIONS in millimeters • High hpE : hpg =2000 to 30000

Contextual Info: fVEC SILICON TRANSISTOR ElfCTR 0ND EV IC 2SB804 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIOI The 2SB804 designed fo r audio frequency power a m plifier application, especially in H ybrid Integrated Circuits. FEATURES • W orld Standard M iniature Package

Contextual Info: 729462 1 POWEREX INC Tfi DE | TSTMbSl O d F s BSS 0 | ' D fOUPIBt "^-33-35^ KT5m 05 Powerex, Inc., Hlllts Street, Ybungwood, Pennsylvania 1S697 412 925-7272 Split-Dual Darlington Transistor Module 50 Amperes/1200 Volts Description OUTLINE ORAWINQ Powerex Split-Dual Darlington Transistor

QM50DY-H

Contextual Info: MITSUBISHI HYBRID ICs M57955L HYBRID IC FOR DRIVING HIGH BETA TRANSISTOR MODULES DESCRIPTION OUTLINE DRAWING M 57955L is a H ybrid Integrated C ircuit desig n ed for drivin g H igh Dim ensions in mm Beta Transistor M odules QM50DY-HB, etc., in an Inverter application.

diode t25 4 c6

Abstract: 7421 transistor transistor k 4213 1S697 KT521205 KTS21205 T-33-35 KT-52
Contextual Info: fOUPIBt 729462 1 POWEREX INC Tfi DE | TSTMbSl O d F s BSS 0 | ' D "^-33-35^ K T5m 05 Powerex, Inc., Hlllts Street, Ybungwood, Pennsylvania 1S697 412 925-7272 Split-Dual Darlington Transistor Module 50 Amperes/1200 Volts Description OUTLINE ORAWINQ Powerex Split-Dual Darlington Transistor

Contextual Info: SEC SILICON TRANSISTOR ElfCTRON DEVICE 2SD1001 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD D ESCRIPTION The 2SD1001 is designed fo r audio frequency power am p lifie r application, especially in H yb rid Integrated Circuits. FEA TU R ES • W orld Standard M iniature Package

BCY67

Abstract: HTI 2E 101S Q62702-C254
Contextual Info: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in

TRANSISTOR MARKING YB

Abstract: RN1901FE RN1906FE RN2901FE RN2902FE RN2903FE RN2904FE RN2905FE RN2906FE
Contextual Info: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2901FE, RN2902FE, RN2903FE RN2904FE, RN2905FE, RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •

transistor a017

Contextual Info: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2901FE, RN2902FE, RN2903FE RN2904FE, RN2905FE, RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

TRANSISTOR MARKING YB

Abstract: RN2101FT RN1101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
Contextual Info: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •

Contextual Info: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2901FE,RN2902FE,RN2903FE RN2904FE,RN2905FE,RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

TRANSISTOR MARKING YB

Abstract: RN1701JE RN1706JE RN2701JE RN2702JE RN2703JE RN2704JE RN2705JE RN2706JE
Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

TRANSISTOR MARKING YB

Abstract: RN2101FT RN2103FT TOSHIBA Transistor Silicon PNP Epitaxial Type RN1101FT RN1106FT RN2102FT RN2104FT RN2105FT RN2106FT
Contextual Info: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

TRANSISTOR MARKING YB

Abstract: RN1101FT RN1106FT RN2101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
Contextual Info: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

RN1901FE

Abstract: RN1906FE RN2901FE RN2902FE RN2903FE RN2904FE RN2905FE RN2906FE TRANSISTOR MARKING YB
Contextual Info: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2901FE,RN2902FE,RN2903FE RN2904FE,RN2905FE,RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

TRANSISTOR MARKING YB

Abstract: RN1701JE RN1706JE RN2701JE RN2702JE RN2703JE RN2704JE RN2705JE RN2706JE
Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm