TRANSISTOR YB Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

NTM2369

Contextual Info: SILICON TRANSISTOR NTM2369 HIGH SPEED SW ITC H IN G . GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD D E S C R IP T IO N T he N T M 2 3 6 9 is N P N transistor, designed for general purpose am plifier and high speed sw itching applications for h yb rid 1C.

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SD1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD1005 is designed fo r audio frequency power am p lifie r application, especially in H ybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

ta69

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed fo r audio frequency power a m plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

2SA1173

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2S A 1173 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SA1173 is designed fo r audio frequency pream plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

2SB1301

Abstract: MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR 2S B 1301 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SB 1301 is designed for audio frequency pow er am plifier and switching application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

2SA1609

Contextual Info: SILICON TRANSISTOR 2SA1609 HIGH VOLTAGE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SA1609 is designed for audio frequency preamplifier application, especially in H ybrid Integrated Circuits. FEATURE • High Collector to Em itter Voltage : Vc e o > -1 4 0 V

2SC3617

Abstract: IEI-1213 MEI-1202 MF-1134 TN3200
Contextual Info: DATA SHEET SILICON TRANSISTOR 2S C 3617 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2SC 3617 is designed fo r audio frequency power am plifier and switching application, especially in H ybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SB800 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIO N The 2SB800 is designed fo r audio frequency power a m plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE D IM ENSIONS

sl-100 TRANSISTOR

Abstract: SL 100 NPN Transistor MF-1134 NEC IR nec transistor selection guide 2SC3554 IEI-1213
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3554 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2S C 3554 is designed fo r high Voltage Switching application, especially in H ybrid Integrated Circuits. FEATURES PACAKAGE DIMENSIONS in millimeters • World Standard M iniature Package

c 1583 transistor

Contextual Info: SILICON TRANSISTOR 2SD1583-Z NPN SILICON EPITAXIAL TRANSISTOR M P -3 DESCRIPTION 2SD1583-Z ¡5 designed fo r Audio Frequency A m plifier and Switching, especially in H ybrid Integrated Circuits. FEATURE PACKAGE DIMENSIONS • High hpE in m illim eters •

2SD1000

Abstract: 2SB799 IEI-1213 MEI-1202 MF-1134 TC-5494A SOT-89 transistor marking LM
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1000 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD1000 is designed fo r audio frequency power am plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC2780 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SC2780 is designed fo r audio frequency pream plifier application, especially in H ybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • W orld Standard M iniature Package

2SD1164

Abstract: CCS-32
Contextual Info: SILICON TRANSISTOR 2SD1164-Z NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR M P -3 DESCRIPTION 2SD1164-Z is designed fo r Low Frequency A m plifier and Switching, especially in H ybrid Integrated Circuits. FEATURE PACKAGE DIMENSIONS in millimeters • High hpE : hpg =2000 to 30000

Contextual Info: fVEC SILICON TRANSISTOR ElfCTR 0ND EV IC 2SB804 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIOI The 2SB804 designed fo r audio frequency power a m plifier application, especially in H ybrid Integrated Circuits. FEATURES • W orld Standard M iniature Package

Contextual Info: SEC SILICON TRANSISTOR ELECTRON DEVICE 2SD1000 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIO N The 2SD1000 is designed fo r audio frequency power am p lifie r application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIM EN SIO N S

Contextual Info: 729462 1 POWEREX INC Tfi DE | TSTMbSl O d F s BSS 0 | ' D fOUPIBt "^-33-35^ KT5m 05 Powerex, Inc., Hlllts Street, Ybungwood, Pennsylvania 1S697 412 925-7272 Split-Dual Darlington Transistor Module 50 Amperes/1200 Volts Description OUTLINE ORAWINQ Powerex Split-Dual Darlington Transistor

QM50DY-H

Contextual Info: MITSUBISHI HYBRID ICs M57955L HYBRID IC FOR DRIVING HIGH BETA TRANSISTOR MODULES DESCRIPTION OUTLINE DRAWING M 57955L is a H ybrid Integrated C ircuit desig n ed for drivin g H igh Dim ensions in mm Beta Transistor M odules QM50DY-HB, etc., in an Inverter application.

diode t25 4 c6

Abstract: 7421 transistor transistor k 4213 1S697 KT521205 KTS21205 T-33-35 KT-52
Contextual Info: fOUPIBt 729462 1 POWEREX INC Tfi DE | TSTMbSl O d F s BSS 0 | ' D "^-33-35^ K T5m 05 Powerex, Inc., Hlllts Street, Ybungwood, Pennsylvania 1S697 412 925-7272 Split-Dual Darlington Transistor Module 50 Amperes/1200 Volts Description OUTLINE ORAWINQ Powerex Split-Dual Darlington Transistor

Contextual Info: SEC SILICON TRANSISTOR ElfCTRON DEVICE 2SD1001 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD D ESCRIPTION The 2SD1001 is designed fo r audio frequency power am p lifie r application, especially in H yb rid Integrated Circuits. FEA TU R ES • W orld Standard M iniature Package

2sc3518

Abstract: c 3518 transistor mp
Contextual Info: :*A i à SH h t i SILICON TRANSISTOR 2SC3518-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2S C 3518-Z is designed fo r A u d io Frequency A m p lifie r and PACKAGE DMENSIONS in millimeters S w itching, esp ecially in H ybrid Integrated Circuits. FEATURES

BCY67

Abstract: HTI 2E 101S Q62702-C254
Contextual Info: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in

2sc3518

Abstract: ml160
Contextual Info: SILICON TRANSISTOR 2 S C 3 5 1 8 -Z NPN SILICON EPITAXIAL TRANSISTOR M P-3 DESCRIPTION 2SC3518-Z desianed fo r Audio Frequency A m plifier and Switching, especially in H ybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS in m illim e te r s • High DC Current Gain hpg = 100 to 400