TRANSISTOR WM 9 Search Results

transistor SMD wm

Contextual Info: BUD636A wm m t Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA

BUK102-50DL

Abstract: T0220AB
Contextual Info: PHILIPS INTERNATIONAL t.SE T> WM 711062b D0b3fll7 SHI • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK102-50DL Logic level DESCRIPTION Monolithic temperature and overloadprotected logic level power

cd 1191 cb

Abstract: CD 1691 CB
Contextual Info: wm m t BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per­

BUK555-200A

Abstract: BUK555-200B M251 T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D WM 711005t. DObMSSl 101 « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: A N AMER PHILIPS/DISCRETE □bE D WM bb53T31 00150b! ? • MRB12350YR MAINTENANCE TYPE for new design use M RB11350Y X ' 33 - I S' PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in

BUK445-100A

Abstract: 1E05 BUK445 BUK445-100B
Contextual Info: PHILIPS INTERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

BLV99

Contextual Info: PHILIPS INTERNATIONAL b5E ]> WM 711005b 0Gb30ûb 771 M P H I N BLV99 Jl U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use as a driver-stage in base stations in the 90 0 M H z communications band. Features: • emitter-ballasting resistors fo r an optim um temperature profile

TRANSISTOR b77

Abstract: 4312.020 transistor tt 2222 BLV92
Contextual Info: PHILIPS INTERNATIONAL bSE J> WM 711DöSb DDb303S 50T BLV92 J U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use In mobile radio transmitters In the 9 0 0 M H z communications band. Features: • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile

2N5004

Abstract: 2N5154 2N5328 OTC1550 OTC1900
Contextual Info: OPTEK TECHNOLOGY INC 4flE D WM fc,7TflSflO 0001303 Ô4T • OTK G>H OPTEK >— ' * - Product Bulletin OTC 1900 August 1990 NPN Power Switching Transistor Type OTC19QO t 35 " 80V, 10A Applications • • • • Inverters Switching Regulators

Contextual Info: Philips Semiconductors WM bb 5 3 R 31 Q02RR6Q 536 M APX Product specification VHF power MOS transistor BLF246 N AUER PHILIPS/DISCRETE FEATURES bRE PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

philips resistor 2322-153

Abstract: philips e3 SOT171 BLV97CE IEC134 ferroxcube wideband hf choke transistor C 548 B Philips
Contextual Info: bSE D Philips Semiconductors Product specification date of issue March 1993 711002b □□b30bö 75b IPHIN BLV97CE Data sheet status WM UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain • Ballasting resistors for an optimum

2n2646 pin

Abstract: 2N2646 pin configuration 2N2646 -pin configuration 2N2646 silicon unijunction transistor unijunction transistor transistor 2N2646 2N2646 CIRCUIT 2n2646 package 2N2646 PHILIPS
Contextual Info: PHILIPS INTERNATIONAL WM 711D A2 b 0042b l0 b31 • P H I N 5bE D Philips Semiconductors T-2 2N2646 Data sheet status Preliminary specification date of issue Decem ber 1990 S'-O*? Silicon unijunction transistor QUICK REFERENCE DATA SYMBOL ~VeB2 PARAMETER CONDITIONS

C583

Contextual Info: SILICON NPN EPITAXIAL PLANAR TRANSISTOR a O « > » & « # # # «ffl O «JSKfi* High Frequency Wide Band Amplifier Applications o High Praquenoy Low Noise Amplifier Applications X m « Unit : run fT i 4Ä< , cob t./J ' 5 '.'A Æ wM 7 ä « INDUSTRIAL APPLICATIONS

BF753

Contextual Info: Ph|lips^emiconductor^_ WM 7 1 1 Qflg[3 O D bflbkiM GS2 PH I N Teliminar^pecifica^ NPN 5 GHz wideband transistor FEATURES BF753 PINNING • Low cost • Low noise figure 1 • 5 V tuner applications. 2 emitter 3 collector PIN DESCRIPTION base DESCRIPTION NPN silicon planar epitaxial

Contextual Info: HEWLETT-PACKARD/ CHPNTS t.lE D WM 4447534 1 44 577 □DD‘Ö Surface Mount, Low Current Silicon Bipolar Transistor Technical Data AT-60111 AT-60211 Features • Low C u rrent O peration AT-60111: 0.4 mA at 3 V AT-60211: 0.8 mA at 3 V • Low Noise Figure

e5kk

Contextual Info: 2DI3OZ-1OO 30a : O utline Draw ings POWER TRANSISTOR MODULE F e a tu re s • «¡W/± High Voltage • 7 U— ') > * f f • i ' t — Krt/Si Including Free Wheeling Diode • ASO A'"/a V-' Excellent Safe Operating Area • M i WM Insulated Type LAMPNo 10

2SA1044

Abstract: 2SA10 2SA1043 FT4853 FT4863 2SA-10 2SC2433
Contextual Info: F U J IT S U 2SA1043 2SA WM SILICON HIGH SPEED POWER TRANSISTORS F T4 8 53 (F T4 863 ) S eptem ber 1979 SILICON PNP RING EMITTER TRANSISTOR (RET) T h e 2 S A 1 0 4 3 /2 S A 1 0 4 4 are silicon PNP general purpose, high p o w er sw itching transistors fab rica ted w ith F ujitsu 's u n iq u e Ring E m itte r T ran sis to r ( R E T ) te c h ­

EVK75-050

Abstract: EVM31-050A EVL31-050 EVK71-050 EVK31-050 ETG81-050A 2DI75S-050A 1di150 EVG31-050A 1DI100E-120
Contextual Info: Transistor Modules COLLMER SEMICONDUCTOR INC HÔE D WM 2230712 DDOlblD 371 • COL Tl.3-15 1200 vo lts class p o w e r tran sisto r m o d u les fo r DC chopper • B e s t s u i t e d f o r m o t o r c o n t r o l a p p l i c a t i o n s u s in g a c h o p p e r c o n v e r t e r

Contextual Info: AS3693C austriamicrosystems Product Specification, Confidential AS3693C–9 Channel high precision LED driver for LCD Backlight 1 General Description The AS3693C is a 9 channels high precision LED controller with build in PWM generators for driving external FETs in LCD-backlight panels.

1557 b transistor

Abstract: transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC 2SC1557 C4053 uhf transistor amplifier K8J5
Contextual Info: S /U D :/N P N l£ 9 * 5 /? J I/7 b -* fê h 5 > 5 tt9 SILICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC , 1557 i f i i i f f l o -f » b ttxib nmmm INDUSTRIAL APPLICATIONS o VHP , UHF o M icrowave H igh Power A m p lifie r A p p lic a tio n s o VHF, UHF Band CATV A p p l i c a t io n s

dcdc sot-89

Abstract: Nichicon UT Power Transisitor 100V 2A RIP SOT 2SA1213 ILC6375 ILC6375CP-33 ILC6375CP-50 MA735 inductor 100mH 10 amp
Contextual Info: ILC6375 www.fairchildsemi.com Final 1 Amp SOT-89 Step Down PWM Switcher Controller General Description Features ! ! ! ! ! ! ! ! The ILC6375 is a high efficiency step-down DC-DC controller using a PWM control scheme. The typical efficiency can be as high as 85% to 90% at 10mA to 1 Amp load.

KS8245A1

Abstract: ks82 ks52
Contextual Info: m NBiEX KS8245A1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SltlQlO DsrlinCjtOn Transistor Module 15 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in

PH0810-35

Abstract: Transistor c54 F1 J37 transistor 431 N cl 740
Contextual Info: = an AMP - company Wireless Bipolar Power Transistor, 850 - 960 MHz 35W PH081 o-35 Features Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration

KD324515

Abstract: IC lf 412
Contextual Info: ro m p r a KD324515 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DUcll DdrliilQtOn Transistor Module 150 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use