TRANSISTOR WH Search Results

EE-125

Abstract: photo transistor high current photo transistor KDT5001A PHOTO TRANSISTOR current to voltage photo-transistor PK640 "photo transistor"
Contextual Info: Silicon photo transistor KDT5001A The KDT5001A is high sensitivity silicon photo [Unit : mm] Dimensions transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Features Higly sensitive photo transistor

Mitsubishi M54564

Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
Contextual Info: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide

Darlington 40A

Abstract: SQD200A60 300V switching transistor Application sqd200a60 darlington 8A 300V darlington power transistor diode 300v 200A sit transistor SQD200A40 380 darlington
Contextual Info: TRANSISTOR MODULE SQD200A40/60 UL;E76102 M SQD200A is a Darlington power transistor module which a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for

QCA300BA60

Abstract: 675g M6 transistor
Contextual Info: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is

BFR96

Abstract: BFR96 TRANSISTOR transistor bfr96
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers

advantage and disadvantage of igbt

Abstract: HFBR1531Z HFBR-1522ETZ
Contextual Info: Galvanic isolation for IGBT-Driver White Paper By Michael Wappmannsberger Usually, an IGBT Insulated Gate Bipolar Transistor is described in the following way: "An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor". Although this sentence

QCA30B60

Abstract: QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max

C2E1

Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max

C2E1

Abstract: transistor QCA75A60 QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 94MAX
Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max

2SD2696

Contextual Info: 2SD2696 Transistors Low frequency transistor for amplification 2SD2696 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) 1.2 0.32 zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size.

QCA50A

Abstract: QCA50A40 QCA50A60 QCA50B QCA50B40 QCA50B60
Contextual Info: TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 50A, VCEX 400/600V

Darlington 30A

Abstract: QCA30B60 30A high speed diode QCA30B40 QCB30A40 QCB30A60
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 M QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 30A, VCEX 400/600V

Contextual Info: TRANSISTOR M ODULE three phases bridge type QF15AA40/60 Q F 1 5AA is a six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The

Contextual Info: 7qqigii3 0005171 qpq TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UN1596 Preliminary NPN SILICON TRANSISTOR NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR „ DESCRIPTION The UTC UN1596 are series of NPN silicon planar transistor, which has gain of 500 at IC=100mA.It can be used in such

Contextual Info: TRANSISTOR M O D U L E three PHASES BRIDGE TYPE QF30AA40/60 Q F30AA is a six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The

Contextual Info: TRANSISTOR MODULE QCA50AA100 UL;E76102 M QCA50AA10 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

DUAL TRANSISTOR

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR  DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. „ FEATURES * Internal free-wheeling diode

Contextual Info: TRANSISTOR MODULE Q CA75AA120 UL;E76102 M QCA75AA1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

Contextual Info: TRANSISTOR M O D U L E three phases bridge type QF50AA40/60 Q F 50A A is a six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMY1N Preliminary DUAL TRANSISTOR DUAL TRANSISTOR  DESCRIPTION The UTC UMY1N is a dual transistor, including a NPN and a PNP which have common emitters. it uses UTC’s advanced technology to provide customers with high DC current gain, etc.

QCA50AA100

Contextual Info: TRANSISTOR MODULE QCA50AA100 UL;E76102 （M） QCA50AA100 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

QF30AA60

Abstract: Darlington 30A QF30AA40 transistor 30A 600v
Contextual Info: TRANSISTOR MODULE THREE PHASES BRIDGE TYPE QF30AA40/60 QF30AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from