TRANSISTOR W2 Search Results

C570X7R1H106KT000N

Abstract: 771-BLF642112 SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 blf642 C570x
Contextual Info: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent

transistor equivalent book FOR D 1047

Abstract: MDA770 PBR951,215 Mouser 1998 Transistor B 1566 MCC 90-16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor

Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.

771-BLF245B

Abstract: transistor j127
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D096 BLF245B VHF push-pull power MOS transistor Product specification Supersedes data of 2000 Oct 17 2003 Aug 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF245B PIN CONFIGURATION

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSL01 TO-92 CBE Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS. DESCRIPTION

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5400 TO-92 CBE High Voltage PNP Transistor For General Purpose And Telephony Applications.

Contextual Info: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior

BLF6G22-180PN

Contextual Info: BLF6G22-180PN Power LDMOS transistor Rev. 02 — 23 April 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

FPD1500DFN

Abstract: FPD750DFN FPD750SOT89
Contextual Info: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

transistor Bc 542

Abstract: transistor bc 567
Contextual Info: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power

Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSD2470 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage SYMBOL VCBO

STX13005

Abstract: STX13005-AP X13005
Contextual Info: STX13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n HIGH VOLTAGE CAPABILITY n LOW SPREAD OF DYNAMIC PARAMETERS n n Figure 1: Package MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATION n n COMPACT FLUORESCENT LAMPS CFLS

TLP290-4

Abstract: 11-11F1
Contextual Info: TLP290-4 Photocouplers GaAs Infrared LED & Photo Transistor TLP290-4 1. Applications • Programmable Logic Controllers PLCs • Switching Power Supplies • Simplex/Multiplex Data Transmission 2. General The Toshiba TLP290-4 consists of phototransistors optically coupled to gallium arsenide infrared emitting diodes.

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP EPITAXIAL PLANAR SILICON TRANSISTOR MPSA92 TO-92 CBE Designed For General Purpose Applications Requiring High Breakdown Voltages,

SSOT-3

Abstract: CBVK741B019 F63TNR FSB560 FSB560A MMSZ5221B SuperSOTTM -3
Contextual Info: FSB560/FSB560A FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF422 BPL TO-92 BCE Designed for High Voltage Video Amplifier in Television Receivers.

rt6010

Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S
Contextual Info: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

TF135

Abstract: bf308
Contextual Info: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.

PN2222A TRANSISTOR

Contextual Info: PN2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

"MARKING TE" US6

Abstract: 2301 mini transistor
Contextual Info: [3 ] Application Information 1. Overview 2. Device Marking [ 3 ] Application Information 1. Overview Toshiba B ias Resistor Transistors BR T s each contain a built-in base series resistor and baseem itter bias resistor. This helps you reduce the parts count in circuits to m iniaturize equipment

la 4507

Abstract: M34507E4FP M34507M2-XXXFP M34507M4-XXXFP A-6390
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

TO-92 Package Dimensions

Abstract: system reset sot-89 H1 SOT89 transistor W3 SOT-23-5
Contextual Info: VOLTAGE DETECTOR KA75XXX VOLTAGE DETECTOR The KA75250/270/290/310/33/360/390/420/450 prevents error of system from supply voltage below normal voltage level at the time the power on and instantaneous power off in systems. TO-92 FEATURES • Detecting against error operations at the power ON/OFF.

EN6186

Abstract: LB1978V SSOP30 irf transistor SPECIFICATION SGND transistor 61865 3191-SSOP30 irf 150 equivalent
Contextual Info: Ordering number : EN6186 LB1978V Monolithic Digital IC LB1978V Three-Phase Half-Wave Sensorless Motor Driver for Headphone Stereos Functions and Features Package Dimensions • Three-phase sensorless motor driver • Built-in speed control • Built-in reference voltage and forward/reverse