TRANSISTOR VBE 1 Search Results

2N558B

Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
Contextual Info: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265

LM394BN

Abstract: SSM2210P SMM210 OP-97 SSM-2210 T010 Oscilloscope Wideband preamplifier 40nV cascode miller capacitance
Contextual Info: Audio Dual Matched NPN Transistor SSM-2210 ANALOG DEVICES FEATURES • Very Low Voltage N o is e @ 100Hz, InV/VHz MAX • Excellent Current Gain Match.0.5% TYP • Tight VBE Match VQS . 200^V MAX

ZTX849

Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR DSA003777
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX849 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 850 950 mV IC=5A, VCE=1V* Static Forward Current Transfer Ratio

2N4403

Contextual Info: TOSHIBA 2N4403 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -100nA Max. , IBEV = 100nA (Max.) @ VCE = -35V, VBE = 0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage

DMMT3906W

Abstract: DMMT3906W-7 J-STD-020A
Contextual Info: DMMT3906W MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR • · · · · Epitaxial Planar Die Construction Intrinsically Matched PNP Pair Note 1 Small Surface Mount Package 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) 1% Matched Tolerance Available (Note 2)

ZTX957

Abstract: TO-1 amps pnp transistor DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -710 -850 mV IC=-1A, VCE=-10V* Static Forward Current Transfer Ratio

ZTX851

Abstract: DSA003778
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX851 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 840 950 mV IC=4A, VCE=1V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio

cascode miller capacitance

Abstract: ka band transistor
Contextual Info: Audio Dual Matched NPN Transistor SSM-2210 ANALOG DEVICES FEATURES • • • • • • • Very Low Voltage N o is e @ 100Hz, InV/VHz MAX Excellent Current Gain Match.0.5% TYP Tight VBE Match VQS . 200^V MAX

ZTX869

Abstract: PS 307 5A DSA003778
Contextual Info: ZTX869 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 800 900 mV IC=5A, VCE=1V* NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio

oscillator pnp 800MHZ

Abstract: NTE160 "PNP Transistor" transistor germanium Germanium power
Contextual Info: NTE160 Germanium PNP Transistor RF–IF Amp, FM Mixer OSC Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a preamplifier mixer and oscillator up to 900MHz. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V

2N4401

Contextual Info: TOSHIBA 2N4401 Transistor Silicon NPN Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current " Iqev = ^ OOnA Max. , Ig[ry —-100nA (Max.) @ VCE = 35V, VBE = -0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage

part MARKING k4a

Abstract: marking code e2 MARKING k4a DMMT3904W DMMT3904W-7 DMMT3904W-7-F J-STD-020A
Contextual Info: DMMT3904W MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: DMMT3904W NEW PRODUCT Features • · · · · · Epitaxial Planar Die Construction Intrinsically Matched NPN Pair Note 1 Small Surface Mount Package 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)

2SC3890

Contextual Info: 2SC3890 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat)

Contextual Info: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE

Contextual Info: TOSHIBA YTS39Q6 Transistor Unit in mm Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -50nA Max. , Ibev = 50nA (Max.) - @ VCE = -30V, VBE = -3V • Excellent DC Current Gain Linearity

KSD5079

Abstract: NPN Transistor 8A
Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5079 TO-3PF COLOR TV HORIZONTAL OUTPUT APPLICATIONS NO DAMPER DIODE ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Collector - Base Voltage(VBE=0) Collector - Emitter Voltage Emitter - Base Voltage Collector Current (DC)

ZTX857

Abstract: 300V transistor npn 2a DSA003778
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX857 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 810 950 mV IC=2A, VCE=5V* Static Forward Current Transfer Ratio

ZTX951

Abstract: DSA003779
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX951 ZTX951 ISSUE 4 – JUNE 94 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Base-Emitter Turn-On Voltage VBE(on) -850 -1000 mV IC=-4A, VCE=-1V* Static Forward

cb amplifier

Abstract: FMMT5179 DSA003671
Contextual Info: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR FMMT5179 ISSUE 3 - JANUARY 1996 FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB TYPICAL CHARACTERISTICS 200 1.0 VCE=1V VCE=1V 175°C VBE - Volts hFE -Gain 25°C -55°C 0.6 0.4 100°C

TRANSISTOR Marking XB PNP

Abstract: YTS3906
Contextual Info: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity

ZTX955

Abstract: DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX955 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -790 -900 mV IC=-3A, VCE=-5V* Static Forward Current Transfer Ratio

ZTX853

Abstract: DSA003778
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 830 950 V IC=4A, VCE=2V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio

ZTX956

Abstract: DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -770 -900 mV IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio

2SC4596E

Abstract: 2SC459
Contextual Info: 2SC4596E SILICON EPITAXIAL PLANNAR TRANSISTOR GENERAL DESCRIPTION High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose TO-220F QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VBE tf PARAMETER