TRANSISTOR VBE 1 Search Results

2N558B

Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
Contextual Info: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265

LM394BN

Abstract: SSM2210P SMM210 OP-97 SSM-2210 T010 Oscilloscope Wideband preamplifier 40nV cascode miller capacitance
Contextual Info: Audio Dual Matched NPN Transistor SSM-2210 ANALOG DEVICES FEATURES • Very Low Voltage N o is e @ 100Hz, InV/VHz MAX • Excellent Current Gain Match.0.5% TYP • Tight VBE Match VQS . 200^V MAX

2N4403

Contextual Info: TOSHIBA 2N4403 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -100nA Max. , IBEV = 100nA (Max.) @ VCE = -35V, VBE = 0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage

DMMT3906W

Abstract: DMMT3906W-7 J-STD-020A
Contextual Info: DMMT3906W MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR • · · · · Epitaxial Planar Die Construction Intrinsically Matched PNP Pair Note 1 Small Surface Mount Package 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) 1% Matched Tolerance Available (Note 2)

ZTX957

Abstract: TO-1 amps pnp transistor DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -710 -850 mV IC=-1A, VCE=-10V* Static Forward Current Transfer Ratio

ZTX851

Abstract: DSA003778
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX851 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 840 950 mV IC=4A, VCE=1V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio

cascode miller capacitance

Abstract: ka band transistor
Contextual Info: Audio Dual Matched NPN Transistor SSM-2210 ANALOG DEVICES FEATURES • • • • • • • Very Low Voltage N o is e @ 100Hz, InV/VHz MAX Excellent Current Gain Match.0.5% TYP Tight VBE Match VQS . 200^V MAX

ZTX869

Abstract: PS 307 5A DSA003778
Contextual Info: ZTX869 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 800 900 mV IC=5A, VCE=1V* NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio

2SC3890

Contextual Info: 2SC3890 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat)

Contextual Info: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE

DMMT3906W

Abstract: DMMT3906W-7 DMMT3906W-7-F J-STD-020A
Contextual Info: SPICE MODEL: DMMT3906W DMMT3906W MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR • · · · · · Epitaxial Planar Die Construction Intrinsically Matched PNP Pair Note 1 Small Surface Mount Package 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) 1% Matched Tolerance Available (Note 2)

Contextual Info: TOSHIBA YTS39Q6 Transistor Unit in mm Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -50nA Max. , Ibev = 50nA (Max.) - @ VCE = -30V, VBE = -3V • Excellent DC Current Gain Linearity

KSD5079

Abstract: NPN Transistor 8A
Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5079 TO-3PF COLOR TV HORIZONTAL OUTPUT APPLICATIONS NO DAMPER DIODE ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Collector - Base Voltage(VBE=0) Collector - Emitter Voltage Emitter - Base Voltage Collector Current (DC)

ZTX951

Abstract: DSA003779
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX951 ZTX951 ISSUE 4 – JUNE 94 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Base-Emitter Turn-On Voltage VBE(on) -850 -1000 mV IC=-4A, VCE=-1V* Static Forward

TRANSISTOR Marking XB PNP

Abstract: YTS3906
Contextual Info: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity

ZTX955

Abstract: DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX955 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -790 -900 mV IC=-3A, VCE=-5V* Static Forward Current Transfer Ratio

ZTX853

Abstract: DSA003778
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 830 950 V IC=4A, VCE=2V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio

ZTX956

Abstract: DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -770 -900 mV IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio

2SC4596E

Abstract: 2SC459
Contextual Info: 2SC4596E SILICON EPITAXIAL PLANNAR TRANSISTOR GENERAL DESCRIPTION High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose TO-220F QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VBE tf PARAMETER

2N3906 toshiba

Contextual Info: TOSHIBA 2N3906 Transistor _U nit in m m Silicon PNP Epitaxial Type SlI M A X . For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -50nA Max. , lßB\/ — 50nA (Max.) @ VCE = -30V, VBE = 3V • Excellent DC Current Gain Linearity

AF239S

Abstract: Germanium mesa
Contextual Info: 11419771 AF239S MESA PNP UHF PREAMPLIFIER The AF 239S is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It is particularly designed as preamplifier, mixer and oscillator up to 900 MHz. ABSOLUTE MAXIMUM RATINGS V C ES VcEO ^E B O 'c P.o, Collector-em itter voltage VBE = 0

ZTX500

Abstract: ztx500 equivalent DSA003767
Contextual Info: ZTX500 PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR ZTX500 ISSUE 1 – MARCH 94 0.95 0.25 0.90 0.20 0.85 IC/IB=10 0.80 IC/IB=30 VCE sat - (Volts) VBE(sat) - (Volts) TYPICAL CHARACTERISTICS C B 0.15 0.05 0.70 10 30 40 50 60 ABSOLUTE MAXIMUM RATINGS. 10 20 IC - Collector Current (mA)

AN5296 Application of the CA3018 Integrated

Abstract: TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY
Contextual Info: HARRIS SEflICOND SECTOR blE D • 43DP271 004703S bSG H H A S CA3146, CA3183 33 H a r r i s S E M I C O N D U C T O R ■ W » W W High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors • VBE Matched ±5mV Max

Contextual Info: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5