TRANSISTOR V63 Search Results

Contextual Info: bbS3R31 Q02HS5U N AMER PHILIPS/DISCRETE «APX b7E D BCV64 BCV64B A SILICON PLANAR TRANSISTOR Double P-N-P transistor in a plastic SO T-143 envelope. Intended for Schmitt-trigger applications. N-P-N complement is the BC V63. Q U IC K R E F E R E N C E D A T A

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

5570

Abstract: C10535E NE34018 NE34018-T1 NE34018-T2 VP15-00-3 4069 NOT GATE IC nec 4308 IC GA-08
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz • High associated gain: Ga = 16 dB TYP. @ f = 2 GHz • Gate width: Wg = 400 µm • 4-pin super minimold package

T1 BC558

Abstract: max8091 t1,t2 BC548 2N3904 AT90S1200 AT90S4414 AT90S8515 BC548 BC558 BC848
Contextual Info: AVR180: External Brown-Out Protection Features Theory of Operation • Low-Voltage Detector • Prevent Register and EEPROM For the CPU to successfully decode and execute instructions, the supplied voltage must always stay above the minimum voltage level set by the chosen

AVR180: External Brown-Out Protection

Abstract: T1 BC558 t1,t2 BC548 AVR180 AT90S1200 AT90S4414 AT90S8515 MAX809 MAX811 BC558 transistor
Contextual Info: AVR180: External Brown-out Protection Features • • • • • • • • Low-voltage Detector Prevent Register and EEPROM Corruption Two Discrete Solutions Integrated IC Solution Extreme Low-cost Solution Extreme Low-power Solution Formulas for Component Value Calculations

Contextual Info: VITELIC V63C64 H IG H PE R FO R M A N C E , L O W PO W ER 8 K x 8 B IT C M O S S TA T IC R A M Features Description • High speed • Maximum access times of 25, 30, 35, 45, and 55 ns ■ Equal access and cycle times ■ Fully static operation • No clock or refresh required

Contextual Info: VITELIC V63C64 H IG H PE R FO R M A N C E , L O W PO W ER 8 K x 8 B IT C M O S S T A T IC R A M Description Features • High speed The V 63C 64 is a high speed, low power, 8192-word • Maximum access times of 25, 3 0 ,3 5 , 45, and 55 ns by 8-bit C M O S static RAM fabricated using high

t1,t2 BC548

Abstract: tBC558 AT90S1200 AT90S4414 AT90S8515 MAX809 MAX811 transistor bc548 bp T1 BC558 T1 BC558 TRANSISTOR
Contextual Info: AVR180: External Brown-out Protection Features • • • • • • • • Low-voltage Detector Prevent Register and EEPROM Corruption Two Discrete Solutions Integrated IC Solution Extreme Low-cost Solution Extreme Low-power Solution Formulas for Component Value Calculations

External Brown-out Protection for C51 Microcontrollers with Active High Reset Input

Abstract: t1,t2 BC548 BC548 Texas Instruments MC7805 applications Texas instruments BC558 bc888 80C51 MANUAL 80C51 MCUs LM1086-3.3 T1 BC548
Contextual Info: External Brown-out Protection for C51 Microcontrollers with Active High Reset Input Features • • • • • • • Low-voltage Detector Prevents Register and EEPROM/Flash Corruption One Discrete Solution Integrated IC Solution Low-power/Low-cost Solution

G60N

Abstract: Thermistor pspice mosfet mark code G4 ic 8870 ORCAD PSPICE BOOK AN1256 IRFZ34 MBR340 TC1410N 100n00
Contextual Info: AN1256 Microchip’s Power MOSFET Driver Simulation Models Author: Cliff Ellison Microchip Technology Inc. Ron Wunderlich (Innovative Ideas and Design) INTRODUCTION The simulation models for Microchip’s power MOSFET drivers aid in the design and analysis of various circuits

HP5082-7760

Abstract: hp 4514 opto led 7 segment anode TIL 702 HP 2231 opto coupler uaa170 UAA180 equivalent seven segment to BCD converter LM 7447 IC hp 5082 4204 pin photodiode cd40288 7448 bcd to seven segment decoder
Contextual Info: ABOUT THE AUTHORS STAN GAGE has more than 10 years' experi­ ence in the design and application of optoelec­ tronic devices and the design and processing of linear integrated circuits. DAVE EVANS has developed various contrast enhancement technologies currently being

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy rated_ SYMBOL FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics

IC LM7808 8V Voltage regulator

Abstract: tl494ch UC3525 application notes LM7915 to-3 lm7812 voltage regulator spec. sheet UC3525 LM7808 TO3 LM2951CM SG3524BN National Semiconductor voltage regulator lm7812
Contextual Info: Linear Products Cross Reference Guide Summer 2004 National Semiconductor provides a comprehensive set of support services. Product information, including sales literature and technical assistance is available through National's Customer Support Centers. Linear Products Cross Reference Guide – 2004

2SC2120-Y

Abstract: 32fHVCO 2SC1959 NJW1300B
Contextual Info: NJW1300B SIGNAL PROCESSOR FOR COLOR TFT • GENERAL DESCRIPTION The NJW1300B is a color TFT signal processor which include color signal modulator , count down circuit , RGB demodulator , RGB interface , and common pole driver , required by color TFT signal processing after Y/C separator.

NJW1300B

Abstract: adl-cp145 2SC2120Y
Contextual Info: NJW1300B SIGNAL PROCESSOR FOR COLOR TFT • GENERAL DESCRIPTION The NJW1300B is a color TFT signal processor which include color signal modulator , count down circuit , RGB demodulator , RGB interface , and common pole driver , required by color TFT signal processing after Y/C separator.

4871 marking

Abstract: ta 7205 marking V64 sot343 NE34018 V64 SOT 23 LD SOT 423 948 LG transistor kf 508
Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VCE = 3 V, ID= 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN: 16.0 dB typical at 2 GHz

40MAG

Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER _ New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typical at 2 GHz CD CO ;u HIGH ASSOCIATED GAIN:

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

transistor 8331

Abstract: LD SOT 423 transistor marking v64 ghz kf 982 NE34018 NE34018-TI-64
Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN:

V64 SOT 23

Abstract: 16118 transistor marking v64 ghz NE34018-TI-63-A NE34018-TI-64-A NE34018 NE34018-A marking V64 sot343
Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) • LOW NOISE FIGURE: 0.6 dB typical at 2 GHz NE34018 25 4 Noise Figure, NF (dB)

Contextual Info: Document Title TVL-55728D070J-LW-I-AAN Product Information Document No. Page No. 1/25 Issue date 2013/03/18 Revision Product Specification To: Product Name: TVL-55728D070J-LW-I-AAN Document Issue Date: 2013/03/18

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz

6323 GA

Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE

IMSA-9637S-33Y902

Abstract: IMSA-9637S SJ 2518 sharp TFT driver LQ075V3DG01 SM02 9637S IMSA-9637S-33Y
Contextual Info: TECHNICAL No. L A 1-06026A DATE Sep 20 .2006 LITERATURE FOR TFT-LC D module V_J model no The L Q Q 7 5 V 3 D G 0 1 technical Please contact product based literature Sharp on this is or subject its to - change representative without before