TRANSISTOR UB T Search Results

Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages

5201/002/05R

Contextual Info: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB • Hermetic packages Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram

2N2907AUB

Contextual Info: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB  ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.

RAD SMD MARKING CODE

Abstract: 2N5551RUB
Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate UB Description

520100204

Contextual Info: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 TO-18 3 IC max 0.8 A hFE at 10 V - 150 mA 100 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in LCC-3UB is connected to the metallic lid.

diode b24

Abstract: M54525P power diodes with V-I characteristics LF400
Contextual Info: b3E • D O l M Tô ? M I T S UB IS HI TS2 « 1 1 1 1 3 M I T S U B I S H I B IP O L A R D IG I T A L ICs M54525P DGTL LOGIC 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY W ITH CLAMP DIODE DESCRIPTION T h e M 54525P, 7 -ch an n e l sink driver, consists of 14 N PN tran­

Transistor 2N2222A

Abstract: NPN transistor 2n2222a 2N2222A 2N2221A 2N2222AUB JANSR 2N2222AUB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2221AL

2N2907A

Abstract: 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB

2N2369A

Abstract: 2N2369AUBC 2N2369AU 2N4449 2N2369AUA 2N2369AUB C545C 317 TRANSISTOR
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/317 DEVICES LEVELS 2N2369A 2N2369AU 2N2369AUA 2N2369AUB 2N2369AUBC *

TL 2N2222A npn transistor

Abstract: 2N2222A JANTX 2N2222A JANTXV 2N2222A JAN MICROSEMI 2N2222A 2N2221A JANTX 2N2222AUB 2N2221A 2N2221AL 2N2221AUA
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2221AL 2N2221AUA 2N2221AUB

JANSR2N5401UB

Abstract: 2N5401UB06 J2N5401UB1
Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate

marking code RAD SMD Transistor npn

Abstract: JS55
Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate

Contextual Info: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial

encodeur incremental

Abstract: TRANSISTOR SUBSTITUTION Convertisseur Tension Frequence MCR-F-UI-DC Conector N macho convertidor de frecuencia transitor engranaje BU 2525 AF analogique
Contextual Info: Phoenix Contact GmbH & Co. KG D-32823 Blomberg, Germany Fax +49- 0 5235-341200, Tel. +49-(0)5235-300 www.interface.phoenixcontact.com D GB TNR 9000681-03 / 04.2003 Universal Frequenz-Messumformer Universal Frequency Transducer F Convertisseur de fréquences

Contextual Info: ACT 5101 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE Features • • • • • • • • • 500 VDC RATING 40 AMP CONTINUOUS CURRENT UP TO 85 °C PACKAGE SIZE 3.0" X 2.1" X 0.39" 4 QUADRANT CONTROL 6 STEP TRAPEZOIDAL OR SINUSOIDAL DRIVE CAPABILITY

K1S161611A

Abstract: K1S161611A-I
Contextual Info: Preliminary K1S161611A UtRAM Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft October 6, 2003 0.1 Revised - Added Lead Free 48-FBGA-6.00x7.00 Product November 25, 2003 Preliminary

K1S1616B1A

Abstract: K1S1616B1A-I
Contextual Info: Preliminary UtRAM K1S1616B1A Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark October 6, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K1S2816BCM

Abstract: K1S2816BCM-I
Contextual Info: K1S2816BCM UtRAM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design Target April 12, 2004 Preliminary 0.1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE 1 (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter

K1S32161CC

Abstract: K1S32161CC-I
Contextual Info: Preliminary K1S32161CC UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark July 14, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K1S32161CC

Abstract: K1S32161CC-I
Contextual Info: K1S32161CC UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft July 14, 2003 1.0 Finalize -Corrected tOH from 5ns to 3ns September 20, 2004 Final

K1S32161CD-FI70

Contextual Info: K1S32161CD UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 04, 2004 Preliminary 1.0 Finalize - Added Lead Free Product April 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

HY64SD16162B

Abstract: HY64SD16162B-DF85E HY64SD16162B-DF85I
Contextual Info: HY64SD16162B Series Document Title 1M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Dec. 4. ’02 Preliminary Initial This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not

K1S3216B1C-FI70

Abstract: K1S3216B1C K1S3216B1C-I
Contextual Info: Preliminary K1S3216B1C UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 16, 2003 Advanced 0.1 Revised - Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0

Contextual Info: Advance K1S321615C UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark April 18, 2003 Advanced The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and