TRANSISTOR TO-92 OUTLINE DIMENSIONS Search Results

NPN Bipolar Transistor

Abstract: KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G
Contextual Info: KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package

TO 92 leadframe

Contextual Info: Data Sheet LEADFRAME TO-92 Test Services ● Program generation/conversion ● Wafer probe ● Burn-in ● -55°C to +165°C test available ● Strip test available Transistor Outline TO-92 TO-92 is a leadframe based, plastic encapsulated package that is well suited for applications requiring optimum

TO92 package

Abstract: transistor TO-92 Outline Dimensions SC-43 TO-92 package transistor Toshiba sc43 210 to92 TO92 PACKAGE DIMENSION
Contextual Info: Transistor Outline Package TO-92 Package Outline Dimensions Outline Dimensions Unit: mm 4.7 max 5.1 max 0.8 1.8 0.55 max 12.7 min 0.45 1.27 0.45 4.1 max 1.27 1 2 3 Notes • The above diagrams may not be actual sizes. Diagrams may be enlarged, reduced, or stretched in either dimension.

18-12 049 transistor

Abstract: k 1094 transistor NE94432 0DD25 SIS 1124
Contextual Info: NEC/ CALIFORNIA SbE J> • b427Mm DQOBSlb 2*15 BNECC NEC T NPN SILICON OSCILLATOR AND MIXER TRANSISTOR 7 NE94432 OUTLINE 32 TO-92 (Units in mm) HIGH GAIN BANDWIDTH PRODUCT: I t = 2000 M Hz TYP • M OUTLINE DIMENSIONS FEATURES • 3 LOW COLLECTOR TO BASE TIME CONSTANT:

Contextual Info: STD13003Q Semiconductor NPN Silicon Power Transistor Features • High speed switching • VCEO sus =400V • Suitable for Switching Regulator and Motor Control Ordering Information Type NO. Marking Package Code STD13003Q STD13003 TO-92 Outline Dimensions

TRANSISTOR a1981

Abstract: a1981 TRANSISTOR 2sa1981 2sa1981 2sc5344 9003
Contextual Info: 2SA1981 Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344 Ordering Information Type NO. 2SA1981 Marking Package Code A1981 TO-92 Outline Dimensions

STD13003

Abstract: STD13003Q
Contextual Info: STD13003Q Semiconductor NPN Silicon Power Transistor Features • High speed switching • VCEO sus =400V • Suitable for Switching Regulator and Motor Control Ordering Information Type NO. Marking Package Code STD13003Q STD13003 TO-92 Outline Dimensions

2sc5344

Abstract: Transistor TRANSISTOR C5344 c5344 TRANSISTOR 2sc5344 NPN C5344 2sa1981 9006 transistor C5344 PDF DOWNLOAD ic audio
Contextual Info: 2SC5344 Semiconductor NPN Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SA1981 Ordering Information Type NO. Marking 2SC5344 C5344 Package Code TO-92 Outline Dimensions

2sa1981

Abstract: Transistor TRANSISTOR a1981 A1981 2sc5344
Contextual Info: 2SA1981 Semiconductor PNP Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair with 2SC5344 Ordering Information Type NO. Marking Package Code 2SA1981 A1981 TO-92 Outline Dimensions

sts8550

Abstract: Transistor 9013 datasheet 9013 pnp 9013 transistor 9013 transistor c 9013 data sheet transistor 9013 Transistor 9013 STS8050
Contextual Info: STS8550 Semiconductor PNP Silicon Transistor Descriptions • High current application • Radio in class B push-pull operation Feature • Complementary pair with STS8050 Ordering Information Type NO. Marking Package Code STS8550 STS8550 TO-92 Outline Dimensions

sts8050

Abstract: Transistor NPN 9012 9012 npn PDF IC 9012 sts8550
Contextual Info: STS8050 Semiconductor NPN Silicon Transistor Descriptions • High current application • Radio in class B push-pull operation Feature • Complementary pair with STS8550 Ordering Information Type NO. Marking Package Code STS8050 STS8050 TO-92 Outline Dimensions

Mitsubishi transistor rf final

Abstract: M57729
Contextual Info: MITSUBISHI RF POWER MODULE M57729 430-450MHZ, 12.5V, 30W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING 66+ 1 60 ± 1 2 -R 2 ±0 .3 V / w GD 0 0.8 ± 0.2 12±1 16.5±1 PIN : 33 ±1 © P in : RF INPUT ©VCC1 ; 1st. DC SUPPLY © V C C2 : 2nd. DC SUPPLY

Contextual Info: MITSUBISHI RF POWER MODULE M57729 430-450MHZ, 12.5V, 30W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm PIN : Pin : RF INPUT ©VCC1 : 1st DC S U PP LY VCC 2 : 2nd. DC SU PP LY ®VCC3 : 3rd. DC S U P P LY ® PO : RF O U T PU T © G N D : FIN A B S O LU TE MAXIMUM RATINGS Tc = 25'1C unless otherwise noted

M57729

Abstract: 4 pin 433 mhz rf module
Contextual Info: MITSUBISHI RF POWER MODULE M57729 430-450MHZ, 12.5V, 30W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm PIN : P in : RF INPUT ©VCC1 : 1st. DC SUPPLY VCC2 : 2nd. DC SUPPLY ©VCC3 : 3rd. DC SUPPLY ©Po : RF OUTPUT © G N D : FIN A B S O LU TE MAXIMUM RATINGS Tc = 2 5 <

Contextual Info: MITSUBISHI RF POWER MODULE 0G 1 7 1 7 3 717 • M57729 430-450MHz, 12.5V, 30W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : ©Pm VCC1 @VCC2 ®VCC3 ®PO @GND © © : RF INPUT : 1st. DC SUPPLY : 2nd. DC SUPPLY : 3rd. DC SUPPLY : RF OUTPUT

M57706L

Abstract: M57706
Contextual Info: MITSUBISHI RF POWER MODULE M57706L 135-145MHz, 12.5V, 8W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : ©Pin ©VCCI @VCC2 0PO GND : RF INPUT : 1st. DC SUPPLY : 2nd. DC SUPPLY : RF OUTPUT : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted

Contextual Info: • b S M 'ìflE T 0017114 lfll MITSUBISHI RF POWER MODULE ■ M57706L 135-145MHZ, 12.5V, 8W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm —lhj ^ >—II— PIN : Pin : RF INPUT ®VCC 1 @VCC2 ®PO ®GND : : : : —II—® 1st. DC SUPPLY

TRANSISTOR SE 135

Abstract: 2SC2055 transistor BA RW
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2055 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC 2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on V H F band portable or hand-held radio applications. Dimensions in mm 0 5 .1 M A X

Marking A93

Abstract: CMBTA92 CMBTA93
Contextual Info: CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P -N -P transistor M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CM BTA92 = 2D CM BTA93 = 2E 3.0 2 . 8" 0 .4 8 0 .14 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.60 0.40 _1.02_

B 315 D

Abstract: SOT89 pq SOT494 SOD89 SOT233 SOT89 Package pq TRANSISTOR SMD CODE PACKAGE SOT89 TRANSISTOR SMD CODE PACKAGE SOT89 4 250 B 340 smd Transistor msc377
Contextual Info: CHAPTER 6 PACKING METHODS page Introduction 6-2 Glossary of terms 6-2 Packing methods in exploded view 6-3 Packing quantities, box dimensions and carrier shapes 6 - 13 Philips Semiconductors Discrete Semiconductor Packages Packing Methods Chapter 6 INTRODUCTION

06309

Abstract: B12V114
Contextual Info: BIPOLARICS, INC. Part Number B12V114 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Gain Bandwidth Product f = 10 GHz typ @ I C = 25mA t • Low Noise Figure 1.4 dB typ at 1.0 GHz 1.7 dB typ at 2.0 GHz

sot446

Abstract: sot482a MSC090 SOD89
Contextual Info: SC18_1999_.book : SC18_CHAPTER_6_1999 1 Wed May 12 11:40:55 1999 CHAPTER 6 PACKING METHODS page Introduction 6-2 Glossary of terms 6-2 Packing methods in exploded view 6-3 Packing quantities, box dimensions and carrier shapes 6 - 13 SC18_1999_.book : SC18_CHAPTER_6_1999

Contextual Info: Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector • High DC current gain (min. 10000). 2 base 3 em itter APPLICATIONS • High gain am plification.

Contextual Info: Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING • Low curren t max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 co lle cto r • High DC current gain (min. 10000). 2 base 3 e m itte r APPLICATIONS