TRANSISTOR TL 16 Search Results

Scans-048

Abstract: DSAGER000249 schaltungen
Contextual Info: ALLGEMEINE HINWEISE ZU DEN TTL-SERIEN 49/54/74 T TL-IC 's sind integrierte Schaltkreise der Digital­ technik. Die Schaltfunktionen werden durch direkte K opp­ lung in Transistor-Transistor-Logik erreicht. Die Gruppenbezeichnung 54 . . . und 74 . . . kenn­

LB 124 transistor

Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427
Contextual Info: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D | k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ | C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor

Contextual Info: DI9405 SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SO-8 llll iE m "'ELT; tiu u u u TL A P ÏT -M

SOT-90B

Contextual Info: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo­ transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio

LM308 Op Amp IC

Abstract: ic lm741 national semiconductor LB-22 balancing resistors IC lm741 ic LM725 LM741 equivalent C1995 LM121 LM308
Contextual Info: C1995 National Semiconductor Corporation TL H 8728 results ensure that the gain fixing resistors are of the same material or have tracking temperature coefficients It is appropriate to mention offset balancing as this can have a large effect on drift Theoretically the drift of a transistor

Contextual Info: TOSHIBA OISCRETE/OPTOJ 9097250 TOSHIBA TT D I S C R E TE/OPTO dF | T D T V a S D DülbflEO S 1 ~ 99D 16820 D~p-39-i3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 4 5 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( Tl-MOS E) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: DI9942 DUAL N & P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low O n-S tate Resistance High Pow er and C urrent C apability Fast Sw itching Speed High T ransient Tolerance SO-8 llll R-CHANNEL tpTffl ,6 TL uuu A

NPN transistor SST 117

Contextual Info: Philips Sem iconductors ^ b b 5 3 ^31 0 Q 3 1 cI b tl 5M 7 M APX Product specification NPN 9 GHz wideband transistor ^ ^ FEATURES ^ BFR540 • N AMER PHILIPS/DISCRETE bTE D PINNING PIN DESCRIPTION • High power gain • Low noise figure • High transition frequency

TOSHIBA 1N DIODE

Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS

Contextual Info: TOSHIBA TLP2530,TLP2531 TOSHIBA PHOTOCOUPLER Tl • V V ^M T GaA£As IRED & PHOTO IC TM l P 3 5 3 1 g V M T ■ DEGITAL LOGIC ISOLATION U nit in mm LINE RECEIVER POWER SUPPLY CONTROL SWITCHING POWER SUPPLY TRANSISTOR INVERTER The TOSHIBA TLP2530 and TLP2531 dual photocouplers consist of a

transistor tl 187

Abstract: TL 187 360-2002 TL 187 TRANSISTOR TRANSISTOR 187 TRANSISTOR 187 datasheet Series TL
Contextual Info: Series TL Ultraminiature «TO 5 transistor size» magnetic latching relays 28 V / 1 A APPLICATION SPECIFICATIONS MIL-R-39016/12 -/29 -/30 ESCC 3602-002 „ General characteristics N° of pole 2 Pdt 0,4 cm 3 Volume Mass 2 g with leads 38 mm[1.500] lenght 1,6 g with leads 4,75 mm[.187] lenght

transistor B A O 331

Abstract: mje340 equivalent d 331 TRANSISTOR equivalent
Contextual Info: ¡S A M S U N G S E M IC O N D U C T O R I N C MJE340 14E 0 J | 7cl b tl l i f S 000770D fl NPN EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITT&R SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complementary to MJE350

TC-7808

Abstract: ic 7808 D1558 NEC 7808 7808 ct 2190 ctv mtu 1622 A15E 2SA1840 uc 3212
Contextual Info: 7" $ • y — h> > h > / \ ° 7 - Darlington Power Transistor 2SA1840 U> h y ^0? - h 5 > y X n t o OA, FA 2SA1840 i, £ fc , V ^ f — t l >• 7 'j y S -y y - 9 , l | 3 X t ' ^ -T o ft $ 0 7 y T ^ f -b ° > ? "tt# T ' g tL o f f t J jg f g li S '^ y o C

Contextual Info: A L L E GR O M I C R O S Y S T E M S 8514019 SPRAGUE. INC T3 D • 0 5 0 4 3 3 Ô 0 0 0 3 5 b 0 b ■ AL6R SEMICONDS / ICS 'T 'Z tl 0 93D 03 560J> V BIPOLAR TRANSISTOR CHIPS t ii NPN Transistors ‘TH ’ Device Types E LE CT R ICAL CH ARACTERISTICS at Tfl = 25°C

irf 3905

Abstract: pj 0266 TC-6059 IRF 5350 TC-605 IRF 544 T108 transistor sms 2t lj11 irf 346
Contextual Info: NEC i ï r i \ ^ — 5 f ♦ h Compound Transistor f x FN 1F4Z $ f t O ' M 7 x £i £ | * J / E L T v ^ î ë 1 - c 2 . 8 ± 0 .2 R i= 2 2 1.5 kQ 0 . 65 io.i 5 O F A 1 F 4 Z t =? > 7 ° ' ) S > - 9 ') T fê ( T a Il = 2 5 °C ) g 3 u ? j W& Æ ^ t& # \tL

UF460

Abstract: 8 pin ic 3773 PA33 T108 X108 Tc-6173 s11s
Contextual Info: Compound Transistor A if# N 1 A 3 Q St o '< 4 T X Ì È Ì Ì £ 1*1/1 L T ^ R i = 1 .0 kQ , R 2= 10 i - t o kQ o — w v Ri — o A A 1A 3 Q £ n > 7 ° ij y > ? 'J X " itm T è £ w 1 \ v — R2 <» O e (Ta = 25 °C) Tl a& g aE # {ÌL fé n u ? ? •^ - X P I fE

L46R

Abstract: 96 mfu DIODE HR 8665 PA606T PA607T 4N51 5M1E 328l
Contextual Info: M O S M O S Field Effect Transistor «PA607T P f t ^ M O S F E T 6 t i > 2 m ^~ ¿ ¿ P A 6 7 T(i, M O SF E T£2Hi1 * 1 /1L * :5- i )V K f ' ^ M X T h 9 , Ü 3 X h <7)ffl 0.32 + 0.1 - 0.05 iJ& te n W tL tto «F a JLH ~ +1 o S C -5 9 0 - 0 .1 MOS £ F E T £ 2 3? i[ * J / l

battery charger on LM358

Abstract: charging control lm358 charger on LM358 LM2575-ADJ functions of ic lm317 LM10C equivalent Battery charger lm317 lm338 application notes 6v BATTERY CHARGING CIRCUIT lm317 lm358 CHARGE CONTROLLER
Contextual Info: LM3420-4 2 -8 4 -12 6 -16 8 Lithium-Ion Battery Charge Controller General Description The LM3420 series of controllers are monolithic integrated circuits designed for charging and end-of-charge control for Lithium-Ion rechargeable batteries The LM3420 is available

Contextual Info: National Semiconductor DS1631 /D S 3631/D S 1632/D S3632/D S1633/DS3633/ DS1634/DS3634 CMOS Dual Peripheral Drivers General Description dance OFF state with the same breakdown levels as when Vcc was applied.

A1834

Abstract: transistor 1020 transistor surface mount to transistor 2SA 2SA1834F5 2SC5001 transistor marking CS transistor PNP 4 1020 transistor 2SA 016
Contextual Info: 2SA1834F5 Transistor, PNP Features Dimensions Units : mm available In CPT F5 (SC-63) package 2SA1834F5 (CPT F5) package marking: A1834-AQ, where ★ is hFE code and □ is lot number low collector saturation voltage VcE(sat) - “0-16 V for lc = -4 A, lB = -0.05 mA

Westinghouse diode

Abstract: KS8245A1 WESTINGHOUSE dc motor Westinghouse power diode S-8245 WESTINGHOUSE ELECTRIC westinghouse ac motor ks82
Contextual Info: r 7294621 PQWEREX INC dT | 75^51 DOOgflflT 7 B ~ — & Single Darlington TRANSISTOR Module Dim A B C D E F G H J K Inches 1.54 Max 1.27 * 0.008 .77 .65 .94 .276 .146 .165 .945 .126 T-33-35 15 Amperes 450 Volts Millimeters 39 Max 32.2 * 0.2 19.5 16.6 24 Max

MJ16010

Abstract: bi 370 transistor MJ16012 ssf transistor MJ16012 MOTOROLA RSS2 IC 7403 2N6191 AM503 MJW16010
Contextual Info: MOTOROLA Order this document by MJ16010/D SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 D esigner’s Data Sheet SW ITCHM ODE S eries NPN S ilicon Pow er Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA969 DESCRIPTION • Collector-Emitter Breakdown Voltage :V(BR)CEo=-160V(Min) • Good Linearity of hFe • Complement to Type 2SC2239

Contextual Info: 16P IN S 0P PS7841-A15 SOLID STATE RELAY FOR OPTICAL DAA FEATURES_ DESCRIPTION_ • FOR OPTICAL DAA CIRCUIT Solid State Relay Photocoupler AC Input Response Diode Bridge Darlington Transistor PS7841 -A15 is a solid state relay for optical DAA (Data Access