TRANSISTOR TIP 125 Search Results

Contextual Info: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 40F/141 F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem ent to TIP 145F/146F/147F ABSOLUTE MAXIMUM RATINGS

transistor tip 30c

Contextual Info: TIP30 SERIES TIP30/30A/30B/30C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C om plem ent to TIP 29/29A/29B/29C ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol :T IP 3 0 Rating Unit - 40 V : TIP30A

TIP 41c transistor

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR MJD41C GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Load Formed fo r Surface M ount Application No Suffix • Straight Lead (I.PACK, 1" Suffix) • Electrically S im ila r to Popular TIP41 and TIP 41C

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR MJD41C GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Load Formed for Surface M ount Application No Suffix • Straight Lead (I.PACK, 1” Suffix) • E lectrically S im ila r to Popular TIP41 and TIP 41C

transistor tip 32C

Abstract: tip 32C
Contextual Info: MJD32/32C PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Load Formed fo r Surface M ount Application No Suffix • Straight Lead (I.PACK, 1" Suffix) • Electrically S im ila r to Popular T IP32 and TIP 32C

transistor 36c

Abstract: tip36 transistor tip36 tip36b
Contextual Info: TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JULY 1968 - REVISED MARCH 1997 Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current

Contextual Info: MH88630 Central Office Interface LS/GS Preliminary Information Features _ ISSUE 7_ April 1995 • T ransform erless 2-4 W ire conversion • Line state detection outputs: O rdering Inform ation M H88630 40-Pin DIL Package

TIP 22 transistor

Abstract: KR1155 TISP2290 r23 transistor
Contextual Info: MT91600 Programmable SLIC Data Sheet Features January 2004 • Transformerless 2 W to 4 W conversion • Controls battery feed to line • Programmable line impedance • Programmable network balance impedance • Off-hook and dial pulse detection • Ring ground over-current protection

P2353AA

Abstract: 2N2222 transistor to drive a relay TISP2290 q2 tip 120 dpdt mechanical relays 3v BAS16 BAV99 MT91600 MPSA92 replaced
Contextual Info: MT91600 Programmable SLIC Preliminary Information Features • • • • • • • • • DS5057 MT91600 28 Pin SSOP Package -40°C to +85°C Description The Mitel MT91600 provides an interface between a switching system and a subscriber loop, mainly for

wiring VDG 13 relay

Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Contextual Info: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738

wiring VDG 13 relay

Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Contextual Info: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface

Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB862N51/OPB862N55 PACKAGE DIMENSIONS SEE NOTE 3- 125 3 .1 8 H OPTICAL n CENTERLINE -.4 8 5 (12.32 (-.110 (2.7 9) T .345 (8.78) .425 (10.80)^MIN -I f ^ COLLECTOR 3 r .425(10.79) PIN 1 IDENTIFICATION (-.3 2 0 (8 .1 3 )

Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB862T51/OPB862T55 DESCRIPTION OPTICAL ' CENTERLINE The OPB862T series of switches is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .125" 3.18 mm gap. A unique

tip 102

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE

Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB867T51 /OPB867T55 PACKAGE DIMENSIONS "1 “5 ( jp — — .313(7.94) .125 (3.17)O P T IC A L -.485 (12.32) r .11Q (2.79) CENTERLINE' .345 (8.76) DESCRIPTION The OPB867T series of switches is designed to allow the

LOG RX2 1037

Abstract: wiring VDG 13 relay private automatic branch exchange M0331 LMN 358 C33120 JBM Electronics IC KA 2247
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The M C33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber tine. Interface

motorola 9100-11

Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
Contextual Info: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC

OPB706A

Abstract: OPB706B OPB706C OPB804 st215
Contextual Info: c*o SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB8Q4 PACKAGE DIMENSIONS .500 12.70 PIN 1 -.175 (4.45) _L .250 (6.35) J_ FEATURES rt .070 (1.78) .330 (8.38) ‘ SEE NOTE 4 .350 (8.89) MIN J_ l-SEE NOTE 3 h-.125 (3.18) ±.005 .460 (11.68) .100 (2.54)- J h-SEE NOTE 3

TIP 122 transistor

Abstract: transistor tip 122 TO46 lens phototransistor transistor TIP 041 d2504 transistor tip 46 emitter phototransistor til 31 QPA1223
Contextual Info: HERMETIC PAIR flPTOELECTHOHICS QPA1223 PACKAGE DIMENSIONS .189 4.80 55) 070(1.78) .055(1.39) ^ .188 (4.78) .180 (4.57) .030(0.76) J MAX .030 (0.76) J MAX EMITTER .046(1.17), .036(0.91) .036 (0.91) .021 (0.53) •.016(0.41) DIA 3 PLCS BASE COLLECTOR (CASE)

transistor TIP 320

Abstract: QVA11134 QVA11133 QVA11123 QVA11124 QVA11223 QVA11224 QVA11233 QVA11234 QVA11323
Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS QVA SERIES DESCRIPTION PACKAGE DIMENSIONS The QVA series of switches is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .125" 3.18 mm gap. A unique

BDX32

Abstract: bdx 540 2N3440 BUY71 2N 3585 TRANSISTOR BDX 538 crt 1700
Contextual Info: BDX32 NPN SILICON POWER TRANSISTOR D E S IG N E D FOR H IG H V O L T A G E C .R .T . S C A N N IN G ► V C E X fating 1700 V • Current Rating — 4 Amps Continuous — 5 Amps Peak » Fast Switching — t f at 3.5 Amps 0.7 Microsecond Typical mechanical specification

Contextual Info: E Q IPIOELECinOllES SLOTTED OPTICAL SWITCH QVB SERIES The QVB series of switches is designed to allow th e user SEE NOTE 3 m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN photo­ transistor across a .125" 3.18 m m gap. A unique

Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB86ONI1/OPB860N51/OPB860N55 PACKAGE DIMENSIONS DESCRIPTION SEE NOTE 3 's 1 .125 3.18 _J O P T IC A L C E N TE R LIN E 9 - . 4 8 5 (12.32) The OPB86 ON series of switches is designed to allow the user maximum flexibility in applications. Each switch

TRANSISTOR BDX 538

Abstract: BDX31 BUY71 BDX 538 2N3440 transistor tip 31 tip 40 power transistor BDX32 bdx 32 TIP 50 transistor
Contextual Info: BDX31 NPN SILICON POWER TRANSISTOR • Designed for High Voltage C .R .T. Scanning • • V c e x Rating 2 2 0 0 V Current Rating — 4 Amps Continuous — 5 Amps Peak • Fast Switching — tf at 3.5 Amps 0.7 Microsecond Typical absolute maximum ratings a t 25 °C ambient temperature