TRANSISTOR TIP 109 Search Results

Contextual Info: Si3215 P R O SLIC P R O G R A M M A B L E CMOS SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Performs all BORSCHT functions Software programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft

Contextual Info: Si3232 D UAL P R O G R A M M A B L E C M O S S L I C WITH L I N E M O N I T O R I N G Features  Ideal for customer premise applications  Low standby power consumption: <65 mW per channel   Internal balanced ringing to 65 Vrms   Software programmable parameters:

HC55171CM

Abstract: ringing tip ring pots telephone 90v 48v 4w-2w hybrid HC5517 HC55171 HC55171CB HC55171IB HC55171IM
Contextual Info: HC55171 Data Sheet July 1998 File Number 4323.4 5 REN Ringing SLIC for ISDN Modem/TA and WLL Features The HC55171 is backward compatible to the HC5517 with the added capability of driving 5 REN loads. The HC55171 is ideal for any modem or remote networking access

Contextual Info: HC55171 Semiconductor 5 REN Ringing SLIC for ISDN Modem/TA and WLL July 1998 Features Description • • • • • • • The HC55171 is backward compatible to the HC5517 with the added capability of driving 5 REN loads. The HC55171 is ideal for any modem or remote networking access applica­

Contextual Info: S i 3 2 2 0/25 DUAL PROSLIC PROGRAMMABLE CMOS SLIC/CODEC Features Performs all BORSCHT functions Ideal for applications up to 18 kft Internal balanced ringing to 65 Vrms Si3220 External bulk ringer support (Si3225) Low standby power consumption: <70 mW per channel

SI3205

Abstract: LCR Components ISOmodem ProSLIC SF4 relay zt sot-89 A1Z P Si322x GR-909 SOIC-16
Contextual Info: S i 3 2 2 0/25 DUAL PROSLIC PROGRAMMABLE CMOS SLIC/CODEC Features Performs all BORSCHT functions Ideal for applications up to 18 kft Internal balanced ringing to 65 Vrms Si3220 External bulk ringer support (Si3225) Software-programmable parameters: Ringing frequency, amplitude, cadence,

STA802M

Abstract: STA800M STA801M
Contextual Info: ●STA801M/802M STA801M/802M 2-Output Separate Excitation Switching Type •Features • 2 regulators combined 1 package • Compact inline package • Output current 0.5A x 2 output • Output voltage of Ch2 selectable from 4 levels. • Built-in flywheel diode (Schottky barrier diode)

HA11423

Abstract: Equivalence transistor HA11423MP HORIZONTAL DRIVER TRANSISTOR transistor 415 rlu 210 Hitachi power transistor driver hitachi amplifier ha 6800 hitachi ha R101
Contextual Info: HITACHI/ LINEAR DEVICES 2b E D 44=^202 O O IQ W 0 HA11423- I-77-07-I I Color TV Deflection Signal Processor Functions • • » • • • Sync separator Horizontal AFC Horizontal oscillator X-ray radiation protector Vertical oscillator Vertical blanking pulse generator

transistor z2w

Abstract: diode z2w AN549 AN9607 HC55171 HC55171B
Contextual Info: HC55171B Data Sheet July 1998 Low Cost 5 REN Ringing SLIC for ISDN Modem/TA and WL File Number 4422.1 Features • Load Drive Capability . . . . . . . . . . . . . . . . . . . . . . . 5 REN The HC55171B low cost, 5 REN ringing SLIC is designed to accommodate a wide variety of short loop applications and

Contextual Info: HI T AC HI / LI NEAR DEVI CES 2bE D HHTbEGS HA11423- O O lü in Q i -77-07-11 Color TV Deflection Signal Processor Functions • • • • • • Sync separator Horizontal AFC Horizontal oscillator X-ray radiation protector Vertical oscillator

740L6000

Abstract: H11L1QT 740L6010 H11L1QT-ND H11L2QT-ND QT OPTOELECTRONICS CLA114CT-ND OPTOCOUPLER 8-PIN isocom cla103-nd HCPL2631QT-ND
Contextual Info: Optoisolators SCR & Triac Output Optoisolators A Isolation Voltage Max. IF Trigger Min. Blocking Voltage Iout mA A 660 14mA 400V 300 4N40IS-ND B B B 5300 5300 5300 30mA 15mA 10mA 250V 250V 250V 100 100 100 MOC3009QT-ND MOC3010QT-ND MOC3011QT-ND B B B B B

Contextual Info: HC5517B HARRIS S E M I C O N D U C T O R 3 REN Short Loop Ringing SLIC Subscriber Line Interface Circuit September 1997 Features Description • Load Drive C ap ab ility. 3 REN The HC5517B low cost, 3 REN ringing SLIC is designed to

Tektronix 2245a

Abstract: 2M3866 s2 umi 250v 1a Tektronix 2246a s 2 umi 1A 130 degree 250V 2N2369 transistor pulse generator PNP TRANSISTOR 1A 60V s 2 umi 1A 250V LARE RTL 1000 AVS Ralph Morrison Wiley
Contextual Info: um A pplication Note 47 August 1991 TECHNOLOGY High Speed Amplifier Techniques A Designer's Companion for W ideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

e505 diode

Abstract: E505 pbl3762a PBL3762A/2
Contextual Info: TISPPBL3 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS AB SLICS Copyright 2001, Power Innovations Limited, UK OCTOBER 2000 — REVISED APRIL 2001 PROGRAMMABLE OVERVOLTAGE PROTECTION FOR ERICSSON MICROELECTRONICS AB SUBSCRIBER LINE INTERFACE CIRCUITS, SLICS

Contextual Info: 1 of 6 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 ICPL2601 High CMR, High Speed Optoisolator Circuit and Package Features Description Absolute Maximum Ratings

TRANSISTOR DTX 390

Abstract: SI3050-E1 TSSOP16 LAND PATTERN Si3019 Application Note Si3019FM si3011 SI3050 SI3011-F SI3011-F-FS SI3050-E1-FT
Contextual Info: S i 3 0 5 0 + S i 3 0 11 / 1 8 / 1 9 P R O G R A M M A B L E VO I C E D A A S O L U T I O N S Features             PCM highway data interface µ-law/A-law companding SPI control interface GCI interface 80 dB dynamic range TX/RX

Contextual Info: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT ARCHIVE INFORMATION

transistor NEC D 586

Abstract: NEC D 586
Contextual Info: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000, NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 and NE29200 are Hetero Junction FET that utilizes the hetero junction to create high mobility

nec 151

Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.

PEB22521

Abstract: AR20 BA22 BA23 z73 trigger transformer k3210
Contextual Info: D ata S he et, D S7 , A pr il 20 00 ANIC A n a lo g N e t w o r k I n te r fa c e C ir c u it PSB 4450 Version 1.2 PSB 4451 Version 1.2 Transceivers N e v e r s t o p t h i n k i n g . Edition 2000.04.07 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

Contextual Info: 1 of 6 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 ICPL2602 High CMR, Line Receiver Optoisolator Circuit and Package Features Description Absolute Maximum Ratings

NEC D 809 F

Abstract: transistor NEC D 586 NE321000 NF 841 nec 0882 s11 diode shottky
Contextual Info: DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and

Contextual Info: HEWLETT-PACKARD/ CI1PNTS blE T> H EW LETT PACKARD m • MMM75A4 DD10E13 110 * H P A î î ^ ’651n 0 Medium PQwer 2 Stage GaAs FET Cascade Chip Outline Features • • • • Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi ds at 14 GHz