TRANSISTOR TIP 107 Search Results

Contextual Info: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 10 0 /1 01/102

Contextual Info: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107

TIP105

Abstract: TIP-106 TIP107 TIP106 transistor TIP105 NPN Transistor VCEO 80V 100V DARLINGTON
Contextual Info: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 00/101/102

TIP100

Abstract: TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor
Contextual Info: NPN EPITAXIAL TIP100/101 /102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107

Tip 107 C

Abstract: transistor tip 107 e 616 E616 IP107 tip 105 tip 107
Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I05/106/107 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE= —4V, lc = - 3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS

T1P110

Abstract: transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102
Contextual Info: ¡ S A M S UN G S E M I C ON D U CT OR INC 14E D 1 7^1,4142 000772a fl PNP EPriAXIAT. SILICON DARLINGTON TRANSISTOR TIP105/106/107 r HIGH DC CURRENT GAIN ‘ MIN hFE=1000 @ V c e = —4 V, lc = -3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER

TIP 107

Abstract: transistor tip 107 transistor t0-220 TO 106 transistor base collector emitter
Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I05/106/107 HIGH DC CURRENT GAIN MIN hFE=1000 @ V e e r -4V, lc= -3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS

TIP 102 transistor

Abstract: transistor tip 107 Transistor tip 102
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE=4V, lc = 3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS

tip 102

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE

npn, transistor, sc 107 b

Abstract: transistor TIP 31A TIP 31a Transistor tip31a TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor
Contextual Info: MO TO RO LA SC XSTRS/R F 12E D | b3b?ES4 aOflSSlô =1 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C POWER TRANSISTORS COMPLEMENTARY SILICON . . . designed for use in general purpose amplifier and switching applications.

transistor BJT 2N2222

Abstract: CTX01-15275 31353R-02 BCM3351 SI3230 BCM33XX bjt 2n2222 BCM11xx npn bjt 2N2222 FZT953
Contextual Info: Si3233 P R O SLIC P R O G R A M M A B L E CMOS SLIC W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Software Programmable SLIC with codec interface Software programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft

tip 102

Abstract: Transistor tip 102
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V c e = 4 V , lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS

mmbt540

Contextual Info: Si3233 P R O SLIC P R O G R A M M A B L E CMOS SLIC W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Software Programmable SLIC with codec interface Software programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft

C4547

Abstract: broadcom 6358 BJT 2N2222 datasheet transistor smd za j1 npn smd 2n2222 smd npn bjt 2N2222 bjt 2n2222 J1 TRANSISTOR DIODE SOT-23 PACKAGE si3200 electrical drawing SI3200-KS
Contextual Info: Si3232 DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING Features Ideal for customer premise applications Low standby power consumption: <65 mW per channel Internal balanced ringing to 65 Vrms Software programmable parameters: Ringing frequency, amplitude,

SI3215

Abstract: SI3201-FS bjt 2n2222 data sheet fairchild coiltronic Si3201-KS Si3211 SI3215M Si3216 GR-909 Si3201
Contextual Info: Si3215 P R O SLIC P R O G R A M M A B L E CMOS SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Performs all BORSCHT functions Software-programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft

SE 7889

Abstract: Si3201-KS AN3272 SI3201-FS SI3216-FT Si3216 SI3211 Si321x sot23 mark code KS GR-909
Contextual Info: Si3216 P RO SLIC P R O GRA MM A B LE W IDEBAND SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features     Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with 16-bit 16 kHz sampling for enhanced audio

SI3216-FT

Abstract: 5551 transistor Si3216
Contextual Info: Si3216 P R O SLIC P R O G R A M M A B L E W I D E B A N D SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y V O L TA G E G E N E R A T I O N Features „ „ „ „ Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with 16-bit 16 kHz sampling for enhanced audio

C4547

Abstract: BCM3351 ProSLIC BCM3352 Si3232 SOIC-16 TQFP-64 smd D11 SI3052 tqfp 64 thermal resistance
Contextual Info: Si3232 PR ELIM IN AR Y DATA SH EET DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING Features Ideal for customer premise applications Low standby power consumption: <50 mW per channel Internal balanced ringing to 65 Vrms Software programmable parameters: Ringing frequency, amplitude, cadence,

Si3201-FS

Abstract: Si3201-KS SE 7889 SI3216-FT ISOmodem si3201 SI3201-GS Si3216 BJT 2N2222 datasheet AN3272
Contextual Info: Si3216 P R O SLIC P R O G R A M M A B L E W I D E B A N D SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y V O L TA G E G E N E R A T I O N Features „ „ „ „ Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with 16-bit 16 kHz sampling for enhanced audio

Contextual Info: Si3215 P R O SLIC P R O G R A M M A B L E CMOS SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Performs all BORSCHT functions Software programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft

Si3201-KS

Abstract: SE 7889 Si3216-BT Si3216 2N5551 SOT23 BJT 2N2222 datasheet BJT 2N2222 datasheet beta Si3215-KT sot23 mark code KS GR-909
Contextual Info: Si3216/Si3215 P R E L I M I N A R Y D A TA S H E E T P R O SLIC P R O G R A M M A B L E W I D E B A N D SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y V O L TA G E G E N E R A T I O N Features Dual-mode wideband 50 Hz to 7 kHz / narrowband (200 Hz to 3.4 kHz) codec with

N681622

Abstract: W681388 TRANSISTOR Bf 310n N681387DG N681387 GKDF QFN-48 thermal resistance N681386 w684386 n681622yg
Contextual Info: N681386/87 Single Programmable Extended Codec/SLCC 1. DESCRIPTION The N681386/87, implements a single channel FXS telephone line interface optimized for short loop applications. It integrates SLCC Subscriber Line Control Circuit functionality with a programmable CODEC and a DC/DC controller.

Contextual Info: Si3232 D UAL P R O G R A M M A B L E C M O S S L I C WITH L I N E M O N I T O R I N G Features  Ideal for customer premise applications  Low standby power consumption: <65 mW per channel   Internal balanced ringing to 65 Vrms   Software programmable parameters:

thd15

Abstract: dtx 370
Contextual Info: « S SILICON SÌ3211 SÌ3212 * LABORATORIES P r o S L I C P r o g r a m m a b l e CMOS S L IC /C o d e c Features • Performs all Battery, Overvoltage, Ringing, Supervision, Coding, Hybrid, and Test BORSCHT Functions ■ Ideal for Short Loop (5 REN, 2 kft)