TRANSISTOR TIC 106 N Search Results

PF0310A

Abstract: PF0144 Hitachi PF0030 HE8807CL Hitachi Industry Laser Diodes HL7806
Contextual Info: Reliability 1 Reliability 1.1 Reliability Data for CODEC LSIs T his sectio n d isc u sse s the re lia b ility d ata for Hitachi communication devices. Although current data is u sed , the rap id pace o f sem ico n d u cto r device development means new data may be added

AF106

Abstract: 40HHZ AF108
Contextual Info: TG~l :-LTTT^- IT- 1-— - 5SC D m 0 2 3 S b Q S G G G H G 4 7 S « S I E G ; PNP Germanium RF Transistor SIEMENS A K T I E N G E S E L L S C H A F T . „ ~ T ' - l f - * ! ' A F 106 D - 04047 for input, mixer, and oscillator stages up to 260 MHz

transistor tic 106 N

Contextual Info: S AMSUNG ELECTRONICS INC 42E MPSA42 D B OQG^ObS 1 E3SMÚK NPN EPITAXIAL SILICON TRANSISTOR s 2r \ - \ s ' HIGH VOLTAGE TRANSISTOR • C o lle c to r-E m ltte r V oltage: VCEo =300V • C o lle c to r D is s ip a tio n : P 0 m a x = 6 2 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

vane air flow sensor

Abstract: alnico alnico 9
Contextual Info: APPLICATIONS INFORMATION THE HALL-EFFECT SENSOR The basic Hall sensor is simply a small sheet of sem iconductor m aterial. A constant voltage source forces a constant bias current to flow in the sem iconductor sheet. The output, a voltage m easured across the width of the sheet, reads near zero if a magnetic field is not

TZ 1167

Abstract: bu208D U/25/20/TN26/15/850/TZ 1167
Contextual Info: MOTOROL A SC XSTRS/R 15E F D I b3b75SM □0ÜM7Tfl 3 | T -3 3 ^ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 AM PERES NPN SILICON HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAM PER DIO DE NPN SILICON POWER TRANSISTORS . . . specifically designed fo r use in large scree n color d eflection

3004x

Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for

DB 22 AR transistor smd

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 -2 .0 GHz frequency range. It has been specifically designed for use in Personal Communications Network PCN base station and

Contextual Info: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107

transistor IR 324 C

Abstract: transistor selection guide
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency

Contextual Info: TOSHIBA 2SC3606 Transistor U n it in m m Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Applications -El- F e a tu re s • Low Noise Figure, High Gain • N F = 1 .1 d B , IS21el2 = 1 1 d B f = 1GHz -EE- A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )

transistor mj3001

Contextual Info: MOTOROLA O rder this docum ent by MJ2501/D SEMICONDUCTOR TECHNICAL DATA PNP MJ2501 NPN M edium -Pow er Com plem entary Silicon Transistors MJ3001 Motorola Preferred Devices . . . for use as output devices in complementary general purpose amplifier applica­

Contextual Info: MIL-PRF-3 8 5 3 4 C ERTIFIED M .S.KEN NED Y C ORP. 1461 HIGH SPEED/V OLT A GE OP A MP 4 7 0 7 D e y Road Liv erpool, N. Y . 1 3 0 8 8 3 1 5 7 0 1-6 7 5 1 FE A T URES: Ex tremely F ast - 5 0 0 v/µS W ide Supply Range ± 1 5 V to ± 4 5 V V M OS Output, No Secondary Breakdo w n

BLW87

Contextual Info: Qs.is.s.u £s,mL- -onau.etoi O' , U na. c/ 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLW87 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW87 is Designed for Class C, 12.5 V High Band Applications

transistor tic 106 N

Abstract: bly power transistor transistor tic 226 transistor SE 431
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA D e sig n e r’s Data Sheet M GW 1 2 N 1 2 0 D Insulated G ate Bipolar Transistor with Anti-Parallel Diode Motorola Prafarrad Davlca N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -247 12 A @ 90 C 20 A @ 25 C

GP500

Abstract: ACY33 bnsu germanium af transistors Germanium Transistor transistor ACY PNP
Contextual Info: ACY33 PIMP Transistor fo r A F-driver and pow er stages The ACY 33 is a germanium PNP alloyed transistor in a case 1 A 3 DIN 41871 similar TO —1 . All leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case.

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

BLW10

Abstract: BLW40 mcd202 philips Film-dielectric Trimmer Capacitors 808 RF POWER TRANSISTOR NPN vhf sot120 LA 4451 philips Trimmer 60 pf QDST337 BLw vhf
Contextual Info: Philips Semiconductors M b b S B 1^ ! DTT • AP X Productspecification VHF power tr a n s is to r _ BLW40 AMER PHILIPS/DISCRETE b^E » FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures

transistor ft 960

Abstract: smd transistor 2x5 tj3b 3b BLT81
Contextual Info: N AMER PHILIPS/DISCRETE fc.'ìE D bbS3^31 □ÜSÖ7S'i E71 B i APX _ rro u u m apwiHwm ivn i-iiiiip» ovm iconauciors BLT81 UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. QUICK REFERENCE DATA

Contextual Info: DISCRETE SEMICONDUCTORS RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor

Contextual Info: DISCRETE SEMICONDUCTORS RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 19 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor

4-1070

Abstract: 45N10E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TM O S E -FE T ™ P o w er Field E ffe c t T ran sisto r T O -2 4 7 w ith Is o la te d M ounting H ole MTW45N10E M otorola Preferred Device TMOS POWER FET 45 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate

transistor B 1184

Abstract: MGR638 BFG480W
Contextual Info: DISCRETE SEMICONDUCTORS BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 Philips Semiconductors 1998 Oct 21 PHILIPS Philips Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain

S12237-02P

Contextual Info: NEWS 01 2013 ELECTRON TUBE PRODUCTS PAGE 21 From Macro to Micro OPTO-SEMICONDUCTOR PRODUCTS Photo ICs for MOST 150 Optical Link PAGE 16 ELECTRON TUBE PRODUCTS Compact 2 W Xenon Flash Lamp Modules PAGE 25 SYSTEMS PRODUCTS Digital Camera ORCA-Flash4.0 PAGE 36

EM- 546 motor

Abstract: 2N6545 2N6545 Motorola 2N6544
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,