TRANSISTOR TESTER Search Results

a1270* transistor

Abstract: computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141
Contextual Info: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2

m1a transistor

Abstract: IE 500 SBT42 SBT92
Contextual Info: SBT42 Semiconductor NPN Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage VCEO=SBT42 : 300V • Complementary pair with SBT92 Ordering Information Type NO. Marking SBT42 Package Code

SBT42F

Abstract: SBT92F IE 500
Contextual Info: SBT42F Semiconductor NPN Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage VCEO=SBT42F : 300V • Complementary pair with SBT92F Ordering Information Type NO. Marking SBT42F Package Code

SPS42

Abstract: SPS92 KST-9048-000 SPS4
Contextual Info: SPS42 Semiconductor NPN Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage VCEO=300V • Complementary pair with SPS92 Ordering Information Type NO. Marking SPS42 SPS42 Package Code

M2A transistor

Abstract: M2A MARKING SOT-23 sot23 m2a SBT42 SBT92 M2A SOT23
Contextual Info: SBT92 Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42 Ordering Information Type NO. Marking SBT92 Package Code

M2A transistor

Abstract: K 2078 SBT42F SBT92 SBT92F
Contextual Info: SBT92F Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42F Ordering Information Type NO. Marking SBT92F Package Code

GRX-1525

Abstract: Sn63pB37 temp profile DRS-22 omega 600smd Vitronics xpm2 programming smt machine ABC-2400 heller PCB monitor spc DRS22
Contextual Info: Circuit Card Assembly Major Process Equipment Overview Component Prep Lead Forming Equipment: – Fancort Universal Lead Forming System – Fancort Pneumatic Presses – GPD Presses – Assorted Dedicated Die Sets – Streckfuss & Manix Transistor Formers

Contextual Info: STA3073F PNP Silicon Transistor Applications PIN Connection • Power amplifier application  High current switching application Features  :  : High collector breakdown voltage VCEO=-120V Low collector saturation voltage VCE sat =-0.5V(Max.) SOT-89

2N5551C

Abstract: 2N5551CN
Contextual Info: 2N5551CN Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) Ordering Information

Contextual Info: STC2073Q NPN Silicon Transistor PIN Connection Descriptions • General purpose amplifier  High voltage application Features  High collector breakdown voltage : VCEO = 160V  Low collector saturation voltage : VCE sat =0.5V(MAX.) SOT-223 Ordering Information

STA92N

Abstract: STC42N T0-92N
Contextual Info: STA92N Semiconductor PNP Silicon Transistor Descriptions • High voltage application Features • High collector-emitter voltage : VCEO=-300V • Complementary pair with STC42N Ordering Information Type NO. Marking Package Code STA92N STA92 T0-92N Outline Dimensions

transistor equivalent CT 2n5551

Abstract: 2N5401N 2N5551 2N5551N ALL 2N5551
Contextual Info: 2N5551N Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with 2N5401N

2N5401

Abstract: 2N5401N 2N5551N
Contextual Info: 2N5401N Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with 2N5551N

2N5551

Abstract: Transistor KST-9041-000 transistor equivalent CT 2n5551 2N5401 2n5401 application
Contextual Info: 2N5551 Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with 2N5401

SBT5551F

Abstract: Transistor KST-2097-000 transistor 2097 SBT5401F
Contextual Info: SBT5551F Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401F

transistor 2N5401

Abstract: 2N5401 2N5551
Contextual Info: 2N5401 Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with 2N5551

SBT5401

Abstract: SBT5551
Contextual Info: SBT5401 Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551

AN601

Abstract: SMP30N10 john worman bipolar transistor tester
Contextual Info: AN601 Siliconix Unclamped Inductive Switching Rugged MOSFETs for Rugged Environments Ed Oxner and Philip A. Dunning The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand

5 pin switch wiring diagram

Abstract: photo-electric switch s411 S1430 MARKING BB1 PNP MARKING BB1 S111 S111A SM13 ZPD11
Contextual Info: Photoelectrics Amplifier, µ-Processor Controlled Type S1430 UAP, 3 Inputs/3 Transistor Outputs • µ-Processor controlled • Amplifier unit for 3 sets of photoelectrics • 3 independent outputs • NPN/PNP both NO or NC selectable • Self-diagnostic functions

Wavetek 395

Abstract: J280 MC13156F 143-18J12 hp3780A Wavetek 164 MPS901 toko transformer IF 455 khz colpitts oscillator vhf
Contextual Info: MC13156 Wideband FM IF System The MC13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. Excellent high frequency performance is achieved at low cost using Motorola’s MOSAIC 1.5 bipolar process. The MC13156 has an onboard grounded collector VCO transistor

Contextual Info: MN34041PL 1.1 Product Summary • Outline This is a MOS-type sensor of 1/3 type offering 2.1 mega pixels. This product consists of embedded photodiode, pixel block by MOS transistor, column AD converter, built-in timing generator TG , high speed serial output I/F and functional

256K DPRAM

Abstract: CB45000 ST20 programmable schmitt trigger tristate nand gate
Contextual Info: CB45000 SERIES  HCMOS6 STANDARD CELLS FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability

Contextual Info: MN34041PL 1.1 Product Summary • Outline This is a MOS-type sensor of 1/3 type offering 2.1 mega pixels. This product consists of embedded photodiode, pixel block by MOS transistor, column AD converter, built-in timing generator TG , high speed serial output I/F and functional

toshiba tc110g

Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective