TRANSISTOR TE 901 EQUIVALENT Search Results

RU901

Contextual Info: S ~p > y 7> $ /Transistors RU901 R U 9 0 1 J K fîrt*h7 >'>'^dr Transistor Unit (Composite Transistor) / \ '7 7 ? 7 >~f / Buffer Amplifier • El/Dimensions (Unit : mm) 1) I 5 -y $ 7 * n 7|g|g&« 2 U S tF m , 2) A 2 K A "7 7 2 1 t- O .S ± O .I lO.SS 0.95

Contextual Info: 62 7  % BFU520X NPN wideband silicon RF transistor Rev. 2 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU520X is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: 62 7  % BFU520X NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.

Mitsubishi a1shcpu

Abstract: A1SY10EU A2SH A1SHcpu A1S61PN A1SJ71AT21B A6BAT Melsec a1shCPU MITSUBISHI INTELLIGENT POWER MODULES A1S61PN A2ASCPU-S30
Contextual Info: MITSUBISHI ELECTRIC 130 Programmable Logic Controllers 1 MELSEC AnS, QnAS 130 130 X 6,5 93,6 130 1 2 3 4 5 6 7 STOP POWER RUN LCLR ERROR RESET RUN RESET MITSUBISHI MITSUBISHI 1 OUTPUT INPUT 3A AC 100/110/120V DC5V AC 200/220/240V 69,5 2 3 4 5 6 7 8 9 A B C

SGSD00030

Abstract: transistor TE 901 equivalent
Contextual Info: • _ / = ^ 7 7 ^ 5 3 7 ooaw a T S G S -T H O M S O N # Q f f ln o fô m iC T « ! g ■ S G ^ T '3 3 ' Z . 0 _ S D 0 0 0 3 0 /3 1 S G S-THOMSON 3QE /3 1 F I ] HIGH VOLTAGE, HIGH POWER, FAST SWITCHING DESC RIPTIO N The SGSD00030.SGSD00031 and SGSD00031 FI

3101-B

Abstract: h3101 Harris HFA3101 5 GHz Gilbert cell array csf 78-12
Contextual Info: CSF! H A R R I S W HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array November 1996 Features • Description High Gain Bandwidth Product fT .10GHz • High Power Gain Bandwidth P ro d u c t. 5GHz •

Contextual Info: in te i • 28F001BX-T/B 1M 128K x 8 CMOS FLASH MEMORY SmartDie Product Specification • High Integration Blocked Architecture — One 8 KByte Boot Block with Lock Out — Two 4 KByte Parameter Blocks — One 112 KByte Main Block — T = Top Boot, B = Bottom Boot

Contextual Info: M S Ic k S í application noií 944-1 ,'-'J • ¿? ' - I-'.Í-.T . ' 1'.• . -,. - r*— . . ■*- . ■ r i' : , r • " 5 -„v ; : ■ ~ .-, . '7 V _,/ .-. ‘ ¡.V rV ■: >• ■■■ ■. , - Microwave Transistor Bias Considerations iv iin rn iA /a u p ira n s K T n r

3146E

Abstract: ca3183ae 3183a 3183e 3118A 3118T
Contextual Info: G E S O L I D S T A T E Dl D E | 3ä75Clfll G014b3fc> 1 | Arrays CA3118, CA3146, CA3183 T “'H 3 * 2 .5 High-Voltage Transistor Arrays Features • M atched general-purpose transistors ■ V g £ m atched + 5 m V max. ■ Operation from D C to 120 M H z C A 3 1 1 8 A T , T ; C A 3 1 4 6 A E , E

Contextual Info: 12-Bit, Fast Sampling Wideband Track-and-Hold APPLICATIO N S: FEATURES typical : • fla s h A /D d riv e r • h ig h -re s o lu tio n , s u b ra n g in g A /D d riv e r • s ig n a l d e g litc h in g (a s in C C D o r D /A syste m s) • c o m m u n ic a tio n s y ste m s

m26123

Abstract: monostable multivibrator using 74123 time delay circuit for ic 74123 application circuits of ic 74123 internal configuration of ic 74123 IC 7400 diagram and truth table ic 74123 74123 74123 time delay 74123 Diagram
Contextual Info: Am26123*Am54/74123 Dual Retriggerable Resettable Monostable Multivibrator inctive Characteristics tetriggerable 0 to 100% duty cycle. Ons to °° output pulse width range. • Am 26123 outputs immune to noise triggering the monostable at the RC timing nodes.

sprague 150d

Abstract: CLC942 CLC942AI
Contextual Info: 12-Bit, Fast Sampling Wideband Track-and-Hold APPLICATIO N S: FEATURES typical : • fla s h A /D d riv e r • h ig h -re s o lu tio n , s u b ra n g in g A /D d riv e r • s ig n a l d e g litc h in g (as in C C D o r D /A syste m s) • c o m m u n ic a tio n s y s te m s

GAL programmer schematic

Abstract: L6924 transistor book gal programming 22v10 palce22v10 programming guide diodes catalog variable capacitor 8033 palce16v8 programming guide micropross mco 8050
Contextual Info: a ZPAL Devices 1992 Data Book/Designer's Guide Advanced Micro Devices ZPAL D evices 1992 Data Book and Design Guide V A N C E D M I C R O D E V I C E S ^ ! 1992 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

transistor ITT 2907

Abstract: transistor itt 975 MC 931 transistor 24GHz UHF transistor band pass filter 2GHz 7812 a
Contextual Info: Ü Î H U S E M I C O N D U C T O R U A R R HFA3101 I S Gilbert Cell UHF Transistor Array Ju ly 1995 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all N PN transistor array configured as a • High Pow er Gain Bandwidth P r o d u c t .5GHz

en 5022 class B

Abstract: ac-dc converter full wave type diagram cy 127 ac-dc converter full wave type schematic diagram lpc 1343 f DIN IEC 60068-2-52 schematic diagram ac-dc converter full wave
Contextual Info: Cassette Style AC-DC Converters 190/230 Watt AC-DC Front End with PFC LPC Series LPC Series Converter with single stage AC to DC conversion and PFC No electrical isolation input to output Input voltage range 85 95 .255 V AC • Immunity to IEC/EN 61000-4-2, -3, -4, -5, -6

4j08

Abstract: TI930 SIEMENS saw filter
Contextual Info: ^ M O T O R O L A - MC13158 /uA/ci-c.:*; In fo rm a tio n Wideband FM IF Subsystem WIDEBAND FM IF SUBSYSTEM FOR DECT AND DIGITAL APPLICATIONS The MC13158 is a wideband IF subsystem that is designed for high per­ formance data and analog applications. Excellent high frequency perfor­

ip9010

Abstract: PJ 0346
Contextual Info: HIP9010 H A R R IS S E M I C O N D U C T O R È Description Features T h e H IP 9010 is used to provide a m ethod of detecting pre­ m ature de tona tion or “ K nock” in autom otive engines. Tw o S e n s o r Inputs • M ic ro p ro c e s s o r P ro g ram m a b le

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

74LS82

Abstract: 74245 BIDIRECTIONAL BUFFER IC ic 4583 schmitt trigger core bit excess 3 adder using IC 7483 advantages for ic 7473 4 BIT COUNTER 74669 la 4508 ic schematic diagram XF107 74295 random number generator by using ic 4011 and 4017
Contextual Info: General Features The SCxD4 series of high performance CMOS gate arrays offers the user the ability to realise customised VLSI inte­ grated circuits featuring the speed performance previously obtainable only with bipolar technologies whilst retaining all the advantages of CMOS technology; low power consum p­

MRF163

Abstract: Motorola AN211
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF163 The RF MOSFET Line 25 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER designed for w ideband large-signal output and driver applica tions in the 2 0 to 4 00 MHz range

ha 13627

Abstract: transistor equivalent 0107 NA ISC 9809 code n42 MS801-4 data ic ha 13627 TF DKL 1307 TRANSISTOR equivalent BFG520 BFR520
Contextual Info: DhmM o • w . ■ feb53*i31 Ga24TflT 10T B A P X £IilJjP « ® 2 IIH £2 2 ii£ i2 £S _ Product specification N AMER PHILIPS/DISCRETE L7E ]>“ NPN 9 GHz wideband transistor £ BFG520; BFG520/X; BFG520/XR FEATURES • High power gain • Low noise figure

4-Layer PCB Layout Guideline for video signals

Contextual Info: c la n tc c BISH PEHWRiÄE ÄNAMÄ ä Ä i f i i f Ä S M EL1508C r Differential DSL Line Driver in 00 n Features General Description • 450mA output drive capability The EL1508C is designed for driving full rate ADSL signals in both CO and CPE applications at very low pow er dissipation. The high